型号 功能描述 生产厂家 企业 LOGO 操作
2SA2126-E

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

2SA2126-E

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:散装 描述:TRANS PNP 50V 3A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers.

SANYO

三洋

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter,relay drivers,lamp drivers,motor drivers

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

2SA2126-E产品属性

  • 类型

    描述

  • 型号

    2SA2126-E

  • 功能描述

    两极晶体管 - BJT HIGH-CURRENT SWITCHING

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
22+
TO-252
100000
代理渠道/只做原装/可含税
SANYO/三洋
24+
NA/
6230
优势代理渠道,原装正品,可全系列订货开增值税票
SANYO
22+
SOT-252
20000
公司只有原装 品质保证
onsemi(安森美)
24+
TO251
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
SANYO/三洋
23+
TO-252
11200
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ON/安森美
2023+
TO252
9100
十五年行业诚信经营,专注全新正品
三年内
1983
只做原装正品
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
SANYO
12+
SOT-252
1900
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SANYO/三洋
2022+
TO-252
14619
原厂代理 终端免费提供样品

2SA2126-E数据表相关新闻