您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第389页 > 2SA183

2SA183晶体管资料

  • 2SA183别名：2SA183三极管、2SA183晶体管、2SA183晶体三极管

  • 2SA183生产厂家：日本三洋公司

  • 2SA183制作材料：Ge-PNP

  • 2SA183性质：射频/高频放大 （HF）_中频放大 （ZF）

  • 2SA183封装形式：直插封装

  • 2SA183极限工作电压：15V

  • 2SA183最大电流允许值：0.01A

  • 2SA183最大工作频率：16MHZ

  • 2SA183引脚数：3

  • 2SA183最大耗散功率：

  • 2SA183放大倍数：

  • 2SA183图片代号：C-47

  • 2SA183vtest：15

  • 2SA183htest：16000000

  • 2SA183atest：0.01

  • 2SA183wtest：0

  • 2SA183代换 2SA183用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA202,3AG53B,

2SA183价格

参考价格：￥2.6679

型号：2SA1834TLR 品牌：Rohm Semiconductor 备注：这里有2SA183多少钱，2025年最近7天走势，今日出价，今日竞价，2SA183批发/采购报价，2SA183行情走势销售排行榜，2SA183报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SA1830

HighVoltageDriverApplications?????????????

High-VoltageDriverApplications Features •Largecurrentcapacity(IC=2A). •Highbreakdownvoltage(VCEO≥400V). •Possibletoofferthe2SA1830/2SC4734devicesinatapereelpackaging,whichfacilitatesautomaticinsertion.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1831

High-VoltageAmp,High-VoltageSwitching

High-VoltageAmplifier,High-VoltageSwitchingApplications Features ·Highbreakdownvoltage(VCEOmin=–800V). ·SmallCob(Cobtyp=1.6pF). ·Highreliabirity(AdoptionofHVPprocesses).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1832

PNPSiliconPlasticEncapsulatedTransistor

FEATURES ●HighVoltageandHighCurrent ●ExcellenthFELinearity ●Complementaryto2SC4738

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SA1832

PNPTRANSISTOR

FEATURES: Highvoltageandhighcurrent ExcellenthFElinearity HighhFE Complementaryto2SA1832

WEITRON

Weitron Technology

WEITRON
2SA1832

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications ●Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) ●ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) ●HighhFE:hFE=70~400 ●Complementaryto2SC4738 ●Smallpack

SENSITRON

SENSITRON SEMICONDUCTOR

SENSITRON
2SA1832

SOT-523Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SA1832

Plastic-EncapsulateTransistors

FEATURES ●Highvoltageandhighcurrent. ●ExcellenthFElinearity. ●HighhFE. ●Complementaryto2sc4738. ●Smallpackage.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA1832

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SA1832

SiliconPNPEpitaxialTypeTransistor

■Features ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1832

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SA1832_03

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications ●Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) ●ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) ●HighhFE:hFE=70~400 ●Complementaryto2SC4738 ●Smallpack

SENSITRON

SENSITRON SEMICONDUCTOR

SENSITRON
2SA1832F

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS

AudioFrequencyGeneralPurposeAmplifierApplications Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=120~400 •Complementaryto2SC4738F •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832FT

AudiofrequencyGeneralPurposeAmplifierApplications

AudiofrequencyGeneralPurposeAmplifierApplications Highvoltage:VCEO=−50V Highcurrent:IC=−150mA(max) HighhFE:hFE=120to400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Complementaryto2SC4738F

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832FV

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832-GR

PNPSiliconEpitaxialTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SA1832-GR

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832-Y

PNPSiliconEpitaxialTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SA1832-Y

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1834

LowVce(sat)Transistor(Strobeflash)(-20V,-10A)

Features 1)SuitableforMiddlePowerDriver 2)ComplementaryNPNTypes:2SC5001 3)LowVCE(sat) VCE(sat)=-0.25V(Max.)(IC/IB=-4A/-0.05A) 4)Largecollectorcurrent:IC=-10A(DCMax.) 5)LeadFree/RoHSCompliant. Applications Motordriver,LEDdriver Powersupply,stro

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA1836

PNPSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SA1836isPNPsiliconepitaxialtransistor. FEATURES •HighDCcurrentgain:hFE2=200TYP. •Highvoltage:VCEO=−50V

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA1836

PNPSILICONEPITAXIALTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SA1836isPNPsiliconepitaxialtransistor. FEATURES •HighDCcurrentgain:hFE2=200TYP. •Highvoltage:VCEO=−50V •Canbeautomaticallymounted

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA1837

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1837

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •HighCurrent-GainBandwidthProduct •ComplementtoType2SC4793 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapp

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2SA1837

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •HighCurrent-GainBandwidthProduct •ComplementtoType2SC4793 APPLICATIONS •Poweramplifierapplications. •Driverstageamplifierapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SA1837

PowerAmplifierApplications

FEATURES ●Highcollectorvoltage˖VCEO=-230V(min) ●Complementaryto2SC4793 ●Hightransitionfrequency:fT=70MHz(Typ.) ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC
2SA1837

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIERAPPLICATIONS

POWERAMPLIFIER,APPLICATIONSDRIVER,STAGEAMPLIFIER,APPLICATIONS FEATURES *HighTransitionFrequency:fT=70MHZ(Typ.) *ComplementarytoUTC2SC4793

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SA1837

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SC4793 ·Hightransitionfrequency APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SA1837

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •HighCurrent-GainBandwidthProduct •ComplementtoType2SC4793 APPLICATIONS •Poweramplifierapplications. •Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1837

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SC4793 ·Hightransitionfrequency APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SA1837

TRANSISTOR(POWER,DRIVERSTAGEAMPLIFIERAPPLICATIONS)

POWERAMPLIFIERAPPLICATIONS ​​​​​​​DRIVERSTAGEAMPLIFIERAPPLICATIONS ​​​​​​​ •HighTransitionFrequency:fT=70MHz(Typ.) •Complementaryto2SC4793

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1837AF

HighFrequencyPNPPowerTransistor

FEATURES ●Hightransitionfrequency: fT=70MHz(typ.) ●Complementaryto2SC4793AF ●TO-220Fpackagewhichcanbe installedtotheheatsinkwithonescrew APPLICATIONS ●Poweramplifier ●Driverstageamplifier

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI
2SA1837-O-MF-N-B

PowerAmplifierApplications

FEATURES ●Highcollectorvoltage˖VCEO=-230V(min) ●Complementaryto2SC4793 ●Hightransitionfrequency:fT=70MHz(Typ.) ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JSMC
2SA1838

MutingCircuitApplications

MutingCircuitApplications Features ·Verysmall-sizedpackagepermitting2SA1838-appliedsetstobemadesmallandslim. ·Smalloutputcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·LowONresistance.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1839

MutingCircuitApplications?

MutingCircuitApplications Features ·Verysmall-sizedpackagepermitting2SA1839-appliedsetstobemadesmallandslim. ·Smalloutputcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·LowONresistance.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1839

PNPEpitaxialPlanarSiliconTransistors

Features Verysmall-sizedpackagepermitting2SA1839-appliedsetstobemadesmallandslim Smalloutputcapacitance. Lowcollector-to-emittersaturationvoltage LowONresistance

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1832

AudioFrequencyGeneralPurposeAmplifierApplications

文件：384.8 Kbytes Page：3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832

Plastic-EncapsulateTransistors

文件：178.84 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA1832_07

AudioFrequencyGeneralPurposeAmplifierApplications

文件：384.8 Kbytes Page：3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832_15

PNPTransistors

文件：978.95 Kbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1832_15

PNPTRANSISTOR

文件：138.01 Kbytes Page：2 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SA1832_15

PNPSiliconPlasticEncapsulatedTransistor

文件：477.42 Kbytes Page：2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SA1832_17

Plastic-EncapsulateTransistors

文件：178.84 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA1832F

AudioFrequencyGeneralPurposeAmplifierApplications

文件：208.26 Kbytes Page：3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832F_07

AudioFrequencyGeneralPurposeAmplifierApplications

文件：208.26 Kbytes Page：3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1832-G

PNPTransistors

文件：978.95 Kbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1832-GR,LXHF

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 0.15A SSM 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SA1832-O

PNPTransistors

文件：978.95 Kbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1832-Y

PNPTransistors

文件：978.95 Kbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1832-Y,LF

封装/外壳：SC-75，SOT-416 包装：卷带（TR） 描述：TRANS PNP 50V 0.15A SSM 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SA1836_15

PNPSILICONEPITAXIALTRANSISTOR

文件：257.839 Kbytes Page：7 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA1837

PowerAmplifierApplications

文件：115.94 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1837

iscSiliconPNPPowerTransistor

文件：252.41 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1837

20WattSiliconEpitaxialPlanarProcessPNPPowerTransistor

文件：457.07 Kbytes Page：3 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI
2SA1837

PowerAmplifierApplicationsDriverStageAmplifierApplications

文件：122.4 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1837

SiliconPNPPowerTransistors

文件：196.56 Kbytes Page：4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SA1837_07

PowerAmplifierApplications

文件：115.94 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SA183产品属性

  • 类型

    描述

  • 型号

    2SA183

  • 制造商

    Toshiba

  • 功能描述

    PNP, 50V, 150mA

2SA183供应商更多...

更新时间：2025-5-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2SA1832
TOSHIBA/东芝
24+
NA/
2540
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市科恒伟业电子有限公司
2SA1832
TOS
1844+
NA
9852
只做原装正品假一赔十为客户做到零风险!!
询价
深圳兆威电子有限公司
2SA1832FT
TOSHIBA
23+
SOT-523
63000
原装正品现货
询价
深圳市汇莱威科技有限公司
2SA1832-Y
TOSHIBA
2024
SOT523
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
询价
深圳市振宏微科技有限公司
2SA1832,PA813T-GB,74VHC574
SOT-523
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市华斯顿科技有限公司
2SA1832
长电
25+23+
SOT-523
24117
绝对原装正品全新进口深圳现货
询价
贸泽芯城（深圳）电子科技有限公司
2SA1832
CJ/长电
23+
SOT-523
170580
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市一线半导体有限公司
2SA1832
24+
SOT523
30000
询价
深圳市向鸿伟业电子有限公司
2SA1832-GR
TOSHIBA
22+
SOT523
13000
原装正品,低价热卖!~24小时欢迎来电咨询,李先生13751179224!
询价
艾睿国际（香港）有限公司
2SA1832
TOSHIBA/东芝
2447
SOT523
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价

2SA183芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

2SA183规格书下载地址

2SA183参数引脚图相关

2SA183数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示