2SA183晶体管资料

  • 2SA183别名:2SA183三极管、2SA183晶体管、2SA183晶体三极管

  • 2SA183生产厂家:日本三洋公司

  • 2SA183制作材料:Ge-PNP

  • 2SA183性质:射频/高频放大 (HF)_中频放大 (ZF)

  • 2SA183封装形式:直插封装

  • 2SA183极限工作电压:15V

  • 2SA183最大电流允许值:0.01A

  • 2SA183最大工作频率:16MHZ

  • 2SA183引脚数:3

  • 2SA183最大耗散功率

  • 2SA183放大倍数

  • 2SA183图片代号:C-47

  • 2SA183vtest:15

  • 2SA183htest:16000000

  • 2SA183atest:0.01

  • 2SA183wtest:0

  • 2SA183代换 2SA183用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA202,3AG53B,

2SA183价格

参考价格:¥2.6679

型号:2SA1834TLR 品牌:Rohm Semiconductor 备注:这里有2SA183多少钱,2025年最近7天走势,今日出价,今日竞价,2SA183批发/采购报价,2SA183行情走势销售排行榜,2SA183报价。
型号 功能描述 生产厂家 企业 LOGO 操作

High Voltage Driver Applications?????????????

High-Voltage Driver Applications Features • Large current capacity (IC=2A). • High breakdown voltage (VCEO≥400V). • Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion.

SANYO

三洋

High-Voltage Amp, High-Voltage Switching

High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEOmin=–800V). · Small Cob(Cobtyp=1.6pF). · High reliabirity (Adoption of HVP processes).

SANYO

三洋

PNP Silicon Plastic Encapsulated Transistor

FEATURES ● High Voltage and High Current ● Excellent hFE Linearity ● Complementary to 2SC4738

SECOS

喜可士

PNP TRANSISTOR

FEATURES: High voltage and high current Excellent hFE linearity High h FE Complementary to 2SA1832

WEITRON

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications ● High voltage and high current: VCEO = −50 V, IC = −150 mA (max) ● Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) =0.95 (typ.) ● High hFE: hFE = 70~400 ● Complementary to 2SC4738 ● Small pack

SENSITRON

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High voltage and high current ● Excellent hFE linearity ● Complementary to 2SC4738

JIANGSU

长电科技

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

TOSHIBA

东芝

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

Plastic-Encapsulate Transistors

FEATURES ● High voltage and high current. ● Excellent hFE linearity. ● High hFE. ● Complementary to 2sc4738. ● Small package.

BILIN

银河微电

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

TOSHIBA

东芝

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

TOSHIBA

东芝

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

Silicon PNP Epitaxial Type Transistor

■ Features ● High voltage and high current ● Excellent hFE linearity ● Complementary to 2SC4738

KEXIN

科信电子

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications ● High voltage and high current: VCEO = −50 V, IC = −150 mA (max) ● Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) =0.95 (typ.) ● High hFE: hFE = 70~400 ● Complementary to 2SC4738 ● Small pack

SENSITRON

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 120~400 • Complementary to 2SC4738F • Small package

TOSHIBA

东芝

Audio frequency General Purpose Amplifier Applications

Audio frequency General Purpose Amplifier Applications High voltage: VCEO = −50 V High current: IC = −150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Complementary to 2SC4738F

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

TOSHIBA

东芝

PNP Silicon Epitaxial Transistor

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

TOSHIBA

东芝

PNP Silicon Epitaxial Transistor

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

TOSHIBA

东芝

Low Vce(sat) Transistor (Strobe flash) (-20V, -10A)

Features 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5001 3) Low VCE(sat) VCE(sat)= -0.25V(Max.) (IC/IB= -4A/ -0.05A) 4) Large collector current : IC= -10A (DC Max.) 5) Lead Free/RoHS Compliant. Applications Motor driver , LED driver Power supply , stro

ROHM

罗姆

PNP SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SA1836 is PNP silicon epitaxial transistor. FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SA1836 is PNP silicon epitaxial transistor. FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V • Can be automatically mounted

RENESAS

瑞萨

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SC4793 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier app

LUGUANG

鲁光电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SC4793 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Amplifier Applications

FEATURES ● High collector voltage˖ VCEO=-230V (min) ● Complementary to 2SC4793 ● High transition frequency :fT=70MHz(Typ.) ● RoHS product APPLICATIONS ● Power Amplifier Applications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SC4793 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

JMNIC

锦美电子

POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS

POWER AMPLIFIER, APPLICATIONS DRIVER, STAGE AMPLIFIER, APPLICATIONS FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793

UTC

友顺

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • High Current-Gain Bandwidth Product • Complement to Type 2SC4793 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SC4793 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

SAVANTIC

TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS ​​​​​​​DRIVER STAGE AMPLIFIER APPLICATIONS ​​​​​​​ • High Transition Frequency: fT= 70 MHz (Typ.) • Complementary to 2SC4793

TOSHIBA

东芝

High Frequency PNP Power Transistor

FEATURES ● High transition frequency: fT = 70MHz (typ.) ● Complementary to 2SC4793AF ● TO-220F package which can be installed to the heat sink with one screw APPLICATIONS ● Power amplifier ● Driver stage amplifier

NELLSEMI

尼尔半导体

Power Amplifier Applications

FEATURES ● High collector voltage˖ VCEO=-230V (min) ● Complementary to 2SC4793 ● High transition frequency :fT=70MHz(Typ.) ● RoHS product APPLICATIONS ● Power Amplifier Applications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Muting Circuit Applications

Muting Circuit Applications Features · Very small-sized package permitting 2SA1838-applied sets to be made small and slim. · Small output capacitance. · Low collector-to-emitter saturation voltage. · Low ON resistance.

SANYO

三洋

Muting Circuit Applications?

Muting Circuit Applications Features · Very small-sized package permitting 2SA1839-applied sets to be made small and slim. · Small output capacitance. · Low collector-to-emitter saturation voltage. · Low ON resistance.

SANYO

三洋

PNP Epitaxial Planar Silicon Transistors

Features Very small-sized package permitting 2SA1839-applied sets to be made small and slim Small output capacitance. Low collector-to-emitter saturation voltage Low ON resistance

KEXIN

科信电子

PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching Applications

ONSEMI

安森美半导体

Transistor for low frequency small-signal amplification

TOSHIBA

东芝

Plastic-Encapsulate Transistors

文件:178.84 Kbytes Page:4 Pages

BILIN

银河微电

Audio Frequency General Purpose Amplifier Applications

文件:384.8 Kbytes Page:3 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

文件:384.8 Kbytes Page:3 Pages

TOSHIBA

东芝

PNP Transistors

文件:978.95 Kbytes Page:2 Pages

KEXIN

科信电子

PNP TRANSISTOR

文件:138.01 Kbytes Page:2 Pages

WINNERJOIN

永而佳

PNP Silicon Plastic Encapsulated Transistor

文件:477.42 Kbytes Page:2 Pages

SECOS

喜可士

Plastic-Encapsulate Transistors

文件:178.84 Kbytes Page:4 Pages

BILIN

银河微电

Audio Frequency General Purpose Amplifier Applications

文件:208.26 Kbytes Page:3 Pages

TOSHIBA

东芝

Transistor for low frequency small-signal amplification

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

文件:208.26 Kbytes Page:3 Pages

TOSHIBA

东芝

PNP Transistors

文件:978.95 Kbytes Page:2 Pages

KEXIN

科信电子

封装/外壳:SC-75,SOT-416 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.15A SSM 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

PNP Transistors

文件:978.95 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:978.95 Kbytes Page:2 Pages

KEXIN

科信电子

封装/外壳:SC-75,SOT-416 包装:卷带(TR) 描述:TRANS PNP 50V 0.15A SSM 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

PNP SILICON EPITAXIAL TRANSISTOR

文件:257.839 Kbytes Page:7 Pages

RENESAS

瑞萨

Power Amplifier Applications Driver Stage Amplifier Applications

文件:122.4 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

文件:196.56 Kbytes Page:4 Pages

JMNIC

锦美电子

isc Silicon PNP Power Transistor

文件:252.41 Kbytes Page:2 Pages

ISC

无锡固电

2SA183产品属性

  • 类型

    描述

  • 型号

    2SA183

  • 制造商

    Toshiba

  • 功能描述

    PNP, 50V, 150mA

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
5811
原装现货,当天可交货,原型号开票
TOSHIBA
2016+
SOT323
6000
只做原装,假一罚十,公司可开17%增值税发票!
Toshiba
23+
N/A
42000
公司只有原装正品
TOSHIBA
24+
SOT-523
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
TOSHIBA/东芝
24+
SC-75(SOT-523)
6000
全新原装深圳仓库现货有单必成
TOSHIBA/东芝
25+
SOT423
32000
TOSHIBA/东芝全新特价2SA1832-Y即刻询购立享优惠#长期有货
TOSHIBA
24+/25+
8000
原装正品现货库存价优
TOSHIBA
SOT23
8560
一级代理 原装正品假一罚十价格优势长期供货
TOSHIBA/东芝
22+
SOT523
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
TOSHIBA(东芝)
23+
SC-75(SOT-416)
2900
三极管/MOS管/晶体管 > 三极管(BJT)

2SA183数据表相关新闻