HighVoltageDriverApplications?????????????

High-VoltageDriverApplications Features •Largecurrentcapacity(IC=2A). •Highbreakdownvoltage(VCEO≥400V). •Possibletoofferthe2SA1830/2SC4734devicesinatapereelpackaging,whichfacilitatesautomaticinsertion.

High-VoltageAmp,High-VoltageSwitching

High-VoltageAmplifier,High-VoltageSwitchingApplications Features ·Highbreakdownvoltage(VCEOmin=–800V). ·SmallCob(Cobtyp=1.6pF). ·Highreliabirity(AdoptionofHVPprocesses).

PNPSiliconPlasticEncapsulatedTransistor

FEATURES ●HighVoltageandHighCurrent ●ExcellenthFELinearity ●Complementaryto2SC4738

PNPTRANSISTOR

FEATURES: Highvoltageandhighcurrent ExcellenthFElinearity HighhFE Complementaryto2SA1832

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications ●Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) ●ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) ●HighhFE:hFE=70~400 ●Complementaryto2SC4738 ●Smallpack

SOT-523Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738

Plastic-EncapsulateTransistors

FEATURES ●Highvoltageandhighcurrent. ●ExcellenthFElinearity. ●HighhFE. ●Complementaryto2sc4738. ●Smallpackage.

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

SiliconPNPEpitaxialTypeTransistor

■Features ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications ●Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) ●ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) ●HighhFE:hFE=70~400 ●Complementaryto2SC4738 ●Smallpack

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS

AudioFrequencyGeneralPurposeAmplifierApplications Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=120~400 •Complementaryto2SC4738F •Smallpackage

AudiofrequencyGeneralPurposeAmplifierApplications

AudiofrequencyGeneralPurposeAmplifierApplications Highvoltage:VCEO=−50V Highcurrent:IC=−150mA(max) HighhFE:hFE=120to400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Complementaryto2SC4738F

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

PNPSiliconEpitaxialTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

PNPSiliconEpitaxialTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

LowVce(sat)Transistor(Strobeflash)(-20V,-10A)

Features 1)SuitableforMiddlePowerDriver 2)ComplementaryNPNTypes:2SC5001 3)LowVCE(sat) VCE(sat)=-0.25V(Max.)(IC/IB=-4A/-0.05A) 4)Largecollectorcurrent:IC=-10A(DCMax.) 5)LeadFree/RoHSCompliant. Applications Motordriver,LEDdriver Powersupply,stro

PNPSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SA1836isPNPsiliconepitaxialtransistor. FEATURES •HighDCcurrentgain:hFE2=200TYP. •Highvoltage:VCEO=−50V

PNPSILICONEPITAXIALTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SA1836isPNPsiliconepitaxialtransistor. FEATURES •HighDCcurrentgain:hFE2=200TYP. •Highvoltage:VCEO=−50V •Canbeautomaticallymounted

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •HighCurrent-GainBandwidthProduct •ComplementtoType2SC4793 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapp

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •HighCurrent-GainBandwidthProduct •ComplementtoType2SC4793 APPLICATIONS •Poweramplifierapplications. •Driverstageamplifierapplications

PowerAmplifierApplications

FEATURES ●Highcollectorvoltage˖VCEO=-230V(min) ●Complementaryto2SC4793 ●Hightransitionfrequency:fT=70MHz(Typ.) ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIERAPPLICATIONS

POWERAMPLIFIER,APPLICATIONSDRIVER,STAGEAMPLIFIER,APPLICATIONS FEATURES *HighTransitionFrequency:fT=70MHZ(Typ.) *ComplementarytoUTC2SC4793

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SC4793 ·Hightransitionfrequency APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •HighCurrent-GainBandwidthProduct •ComplementtoType2SC4793 APPLICATIONS •Poweramplifierapplications. •Driverstageamplifierapplications

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SC4793 ·Hightransitionfrequency APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

TRANSISTOR(POWER,DRIVERSTAGEAMPLIFIERAPPLICATIONS)

POWERAMPLIFIERAPPLICATIONS ​​​​​​​DRIVERSTAGEAMPLIFIERAPPLICATIONS ​​​​​​​ •HighTransitionFrequency:fT=70MHz(Typ.) •Complementaryto2SC4793

HighFrequencyPNPPowerTransistor

FEATURES ●Hightransitionfrequency: fT=70MHz(typ.) ●Complementaryto2SC4793AF ●TO-220Fpackagewhichcanbe installedtotheheatsinkwithonescrew APPLICATIONS ●Poweramplifier ●Driverstageamplifier

PowerAmplifierApplications

FEATURES ●Highcollectorvoltage˖VCEO=-230V(min) ●Complementaryto2SC4793 ●Hightransitionfrequency:fT=70MHz(Typ.) ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications

MutingCircuitApplications

MutingCircuitApplications Features ·Verysmall-sizedpackagepermitting2SA1838-appliedsetstobemadesmallandslim. ·Smalloutputcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·LowONresistance.

MutingCircuitApplications?

MutingCircuitApplications Features ·Verysmall-sizedpackagepermitting2SA1839-appliedsetstobemadesmallandslim. ·Smalloutputcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·LowONresistance.

PNPEpitaxialPlanarSiliconTransistors

Features Verysmall-sizedpackagepermitting2SA1839-appliedsetstobemadesmallandslim Smalloutputcapacitance. Lowcollector-to-emittersaturationvoltage LowONresistance

AudioFrequencyGeneralPurposeAmplifierApplications

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Plastic-EncapsulateTransistors

文件：178.84 Kbytes Page：4 Pages

AudioFrequencyGeneralPurposeAmplifierApplications

文件：384.8 Kbytes Page：3 Pages

PNPTransistors

文件：978.95 Kbytes Page：2 Pages

PNPTRANSISTOR

文件：138.01 Kbytes Page：2 Pages

PNPSiliconPlasticEncapsulatedTransistor

文件：477.42 Kbytes Page：2 Pages

Plastic-EncapsulateTransistors

文件：178.84 Kbytes Page：4 Pages

AudioFrequencyGeneralPurposeAmplifierApplications

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AudioFrequencyGeneralPurposeAmplifierApplications

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PNPTransistors

文件：978.95 Kbytes Page：2 Pages

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 0.15A SSM 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNPTransistors

文件：978.95 Kbytes Page：2 Pages

PNPTransistors

文件：978.95 Kbytes Page：2 Pages

封装/外壳：SC-75，SOT-416 包装：卷带（TR） 描述：TRANS PNP 50V 0.15A SSM 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNPSILICONEPITAXIALTRANSISTOR

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PowerAmplifierApplications

文件：115.94 Kbytes Page：4 Pages

iscSiliconPNPPowerTransistor

文件：252.41 Kbytes Page：2 Pages

20WattSiliconEpitaxialPlanarProcessPNPPowerTransistor

文件：457.07 Kbytes Page：3 Pages

PowerAmplifierApplicationsDriverStageAmplifierApplications

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SiliconPNPPowerTransistors

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PowerAmplifierApplications

文件：115.94 Kbytes Page：4 Pages