TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon PNP Epitaxial Type Transistor

■ Features ● High voltage and high current ● Excellent hFE linearity ● Complementary to 2SC4738

PNP Silicon Plastic Encapsulated Transistor

FEATURES ● High Voltage and High Current ● Excellent hFE Linearity ● Complementary to 2SC4738

Audio Frequency General Purpose Amplifier Applications

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