AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS

AudioFrequencyGeneralPurposeAmplifierApplications Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=120~400 •Complementaryto2SC4738F •Smallpackage

AudioFrequencyGeneralPurposeAmplifierApplications

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Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

SiliconPNPEpitaxialTypeTransistor

■Features ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

PNPSiliconPlasticEncapsulatedTransistor

FEATURES ●HighVoltageandHighCurrent ●ExcellenthFELinearity ●Complementaryto2SC4738

AudioFrequencyGeneralPurposeAmplifierApplications

文件：384.8 Kbytes Page：3 Pages

AudiofrequencyGeneralPurposeAmplifierApplications

AudiofrequencyGeneralPurposeAmplifierApplications Highvoltage:VCEO=−50V Highcurrent:IC=−150mA(max) HighhFE:hFE=120to400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Complementaryto2SC4738F

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

AudioFrequencyGeneralPurposeAmplifierApplications

文件：208.26 Kbytes Page：3 Pages