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2SA164晶体管资料

  • 2SA164别名:2SA164三极管、2SA164晶体管、2SA164晶体三极管

  • 2SA164生产厂家:日本索尼公司

  • 2SA164制作材料:Ge-PNP

  • 2SA164性质:甚高频 (VHF)_超高频/特高频 (UHF)

  • 2SA164封装形式:直插封装

  • 2SA164极限工作电压:20V

  • 2SA164最大电流允许值:0.015A

  • 2SA164最大工作频率:500MHZ

  • 2SA164引脚数:3

  • 2SA164最大耗散功率

  • 2SA164放大倍数

  • 2SA164图片代号:D-13

  • 2SA164vtest:20

  • 2SA164htest:500000000

  • 2SA164atest:0.015

  • 2SA164wtest:0

  • 2SA164代换 2SA164用什么型号代替:AF109R,AF139,AF239(S),2N3279,2N3280,2N3281,2N3282,2N3283,2N3284,2N3285,2N3286,3AG80D,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Good linearity of hFE APPLICATIONS • For switching regulator ,driver and power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Good linearity of hFE APPLICATIONS • For switching regulator ,driver and power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Good linearity of hFE APPLICATIONS • For switching regulator ,driver and power amplifier applications

JMNIC

锦美电子

40 Watt Silicon PNP Switching Power Transistor

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Good linearity of hFE APPLICATIONS • For switching regulator ,driver and power amplifier applications

THINKISEMI

思祁半导体

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -SOV(Min) • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ (lc= -3A, IB= -0,1 A) APPLICATIONS • Designed for switching regulator, driver and power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

High-Current Switching Applications

High-Current Switching Applications Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. · Small and slim package making it easy to make 2SA1641-used set smaller.

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

2SA1643

DESCRIPTION • With TO-220F package • Complement to type 2SC4327 • Low collector saturation voltage APPLICATIONS • For power switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SC4327 • Low collector saturation voltage APPLICATIONS • For power switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SC4327 • Low collector saturation voltage APPLICATIONS • For power switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Fast switching speed • Low collector saturation voltage APPLICATIONS • For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

SAVANTIC

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solen

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Fast switching speed • Low collector saturation voltage APPLICATIONS • For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Fast switching speed • Low collector saturation voltage APPLICATIONS • For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

ISC

无锡固电

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor • Fast switching speed\n• Low collector-to-emitter saturation voltage: VCE(sat) = −0.3 V MAX. @IC = −4 A;

RENESAS

瑞萨

丝印代码:HFE2;SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, so

RENESAS

瑞萨

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VcEo

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印代码:HFE2;SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, so

RENESAS

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Developed for use in switching power supplies, DC/DC

ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solen

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solen

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Fast switching speed • Low collector saturation voltage APPLICATIONS • For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

JMNIC

锦美电子

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) • Fast Switching Speed • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@IC= -6A APPLICATIONS • This type of power transistor is developed for high-speed switching and features a very low VCE(sat), is idea

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Fast switching speed • Low collector saturation voltage APPLICATIONS • For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) • Fast Switching Speed • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@IC= -6A APPLICATIONS • This type of power transistor is developed for high-speed switching and features a very low VCE(sat), is idea

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solen

NEC

瑞萨

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Thi

ISC

无锡固电

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Thi

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

NEC

瑞萨

丝印代码:HFE2;SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1648 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, moto

RENESAS

瑞萨

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -0.3V(Max) @IC=-3.0A APPLICATIONS · Switching Regulators · DC/DC Converters · Motor Drivers

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

NEC

瑞萨

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, so

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

ISC

无锡固电

丝印代码:HFE2;SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

RENESAS

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

ISC

无锡固电

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, so

NEC

瑞萨

Silicon PNP Power Transistors

文件:150.34 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:150.34 Kbytes Page:3 Pages

JMNIC

锦美电子

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

ONSEMI

安森美半导体

Silicon PNP Power Transistor

文件:175.11 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:148.92 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:148.92 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:164.09 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistor

文件:187.44 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Transistor-Bipolar Small Signal Transistors

RENESAS

瑞萨

Silicon PNP Power Transistors

文件:164.09 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:167.78 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:167.78 Kbytes Page:3 Pages

JMNIC

锦美电子

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件:266.75 Kbytes Page:8 Pages

RENESAS

瑞萨

Silicon PNP Power Transistors

文件:167.32 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon Power Transistor

文件:219.11 Kbytes Page:6 Pages

RENESAS

瑞萨

2SA164产品属性

  • 类型

    描述

  • Production Status:

    EOL

更新时间:2026-5-14 20:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
SOT252
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NEC
2026+
TO252-2.5
65428
百分百原装现货 实单必成
RENESAS/瑞萨
25+
SOP
32360
RENESAS/瑞萨全新特价2SA1647-Z-E1即刻询购立享优惠#长期有货
NEC
24+
SOT-252
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
RENESAS/瑞萨
/ROHS.original
原封
22102
电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU.
NEC
07+
TO252-2.5
2000
原装现货海量库存欢迎咨询
RENESAS
26+
TO252
360000
进口原装现货
RENESAS/瑞萨
2450+
SOT-252
8850
只做原装正品假一赔十为客户做到零风险!!
NEC
25+23+
TO252-2.5
7921
绝对原装正品全新进口深圳现货
NEC
23+
TO-252
66600
专业芯片配单原装正品假一罚十

2SA164数据表相关新闻