Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -0.3V(Max) @IC=-3.0A APPLICATIONS · Switching Regulators · DC/DC Converters · Motor Drivers

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1648 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, moto

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform