AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complementary to 2SC4177 ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, Ic = -1.0 mA) ● High Voltage: VCEO = -50 VCE

Plastic-Encapsulated Transistors

SOT-323 Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

PNP Silicon Epitaxia

■ Features ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

PNP Silicon Plastic Encapsulated Transistor

-0.1A , -60V PNP Silicon Plastic Encapsulated Transistor FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177