2SA16晶体管资料

  • 2SA16别名:2SA16三极管、2SA16晶体管、2SA16晶体三极管

  • 2SA16生产厂家:日本日立公司

  • 2SA16制作材料:Ge-PNP

  • 2SA16性质:调幅 (AM)_前置放大 (V)_混频 (M)

  • 2SA16封装形式:直插封装

  • 2SA16极限工作电压:12V

  • 2SA16最大电流允许值:0.015A

  • 2SA16最大工作频率:12MHZ

  • 2SA16引脚数:3

  • 2SA16最大耗散功率

  • 2SA16放大倍数

  • 2SA16图片代号:C-47

  • 2SA16vtest:12

  • 2SA16htest:12000000

  • 2SA16atest:0.015

  • 2SA16wtest:0

  • 2SA16代换 2SA16用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,3AG54A,

2SA16价格

参考价格:¥0.2922

型号:2SA1618-GR(TE85L,F 品牌:Toshiba 备注:这里有2SA16多少钱,2025年最近7天走势,今日出价,今日竞价,2SA16批发/采购报价,2SA16行情走势销售排行榜,2SA16报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SwitchingPowerTransistor(-12APNP)

SwitchingPowerTransistor

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

SHINDENGEN

SiliconPNPPowerTransistors

DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SwitchingPowerTransistor(-15APNP)

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

SHINDENGEN

SiliconPNPPowerTransistors

DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

GateDriver

Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan

POWEREX

Powerex Power Semiconductors

POWEREX

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE(SUPERMINITYPE)

DESCRIPTION 2SA1602isasuperminipackageresinsealedsiliconPNPepitaxialtransistor, Itisdesignedforlowfrequencyvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●ExcellentlinearityofDCforwardgain. ●Superm

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE(Superminitype)

FORLOWFREQUENCYAMPLIFYAPPLICATION FEATURE ・Superminipackageforeasymounting ・ExcellentlinearityofDCforwardgain ・Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax APPLICATION ForHybridIC,smalltypemachinelowfrequencyvoltageAmplifyappli

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE(Superminitype)

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603AisasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentl

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

High-VoltageSwitching,AF100WDriverApplications

High-VoltageSwitching,AF100WDriverApplications Features ·Micalesspackagefacilitatingmounting. Applications ·High-voltageswitching,AFpoweramplifier,100Woutputpredrivers.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-SpeedSwitchingApplications

High-SpeedSwitchingApplications Features •Fastswitchingspeed. •Highgain-bandwidthproduct. •Lowsaturationvoltage.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

PNPEpitaxialPlanarSiliconTransistors

Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPSiliconEpitaxia

■Features ●HighfT:fT=400MHz ●Complementaryto2SC3739

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

HIGHFREQUENCYAMPLIFIERANDSWITCHINGPNPSILICONEPITAXIALTRANSISTOR

FEATURES ●HighfT:fT=400MHz ●Complementaryto2SC3739

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SILICONTRANSISTOR

HIGHVOLTAGEAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

HIGHSPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGHSPEEDSWITCHINGPNPSILICONEPITAXIALTRANSISTOR

HIGHSPEEDSWITCHINGPNPSILICONEPITAXIALTRANSISTOR

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERPNPSILICONEPITAXIALTRANSISTOR

FEATURES ●Complementaryto2SC4177 ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,Ic=-1.0mA) ●HighVoltage:VCEO=-50VCE

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

PNPSiliconEpitaxia

■Features ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Plastic-EncapsulatedTransistors

SOT-323Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:-0.1A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

SOT-323Plastic-EncapsulateTransistors

FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:-0.1A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●HighvoltageVCEO=-50V. ●ExcellentHFELinearity. ●HighDCcurrentgain:hFE=200typ. ●Complementaryto2SC4177. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

PNPSiliconPlasticEncapsulatedTransistor

-0.1A,-60VPNPSiliconPlasticEncapsulatedTransistor FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SILICONTRANSISTOR

AUDIOFREQUENCY,GENERALPURPOSEAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor FEATURES HighvoltageVCEO=-50V. ExcellentHFELinearity. HighDCcurrentgain:hFE=200typ. Complementaryto2SC4177. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

AUDIOFREQUENCYHIGHGAINAMPLIFIERPNPSILICONEPITAXIALTRANSISTOR

FEATURES ●Complementaryto2SC4180 ●HighDCCurrentGain:hFE500TYP.(VCE=-6.0V,IC=-1.0mA)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

PNPSiliconEpitaxialTransistor

■Features ●HighDCCurrentGain ●Complementaryto2SC4180

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

SILICONTRANSISTOR

AUDIOFREQUENCYHIGHGAINAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

AUDIOFREQUENCYAMPLIFIER,SWITCHING PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICONPOWERTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING DESCRIPTION The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandare idealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrent

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LargeCurrentCapacity ●HighhFEandLowCollectorSaturationVoltage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

PNPSiliconEpitaxialTransistorforHigh-speedSwitching

FEATURES ●Largecurrentcapacity: IC(DC):-10A,IC(pulse):-15A. ●HighhFEandlowcollectorsaturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

iscSiliconPNPPowerTransistor

DESCRIPTION •Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A •HighhFEandlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APP

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PTYPETTANSISTORS

PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand

STANSON

Stanson Technology

STANSON

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrentcapacity: IC

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrentcapacity: IC

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

PTYPETTANSISTORS

PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand

STANSON

Stanson Technology

STANSON

2SA16产品属性

  • 类型

    描述

  • 型号

    2SA16

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-1 -15V -.004A .02W

更新时间:2025-5-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
7345
原装现货,当天可交货,原型号开票
22+
100000
代理渠道/只做原装/可含税
UTC/友顺
2024+
TO-252
500000
诚信服务,绝对原装原盘
NEC
25+
NA
880000
明嘉莱只做原装正品现货
NEC
23+
TO-92L
4095
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
60000
UTC/友顺
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
NEC
24+
TO92
27950
郑重承诺只做原装进口现货
UTC
23+
SOT-223
38421
现货库存,实单请给接受价格
UTC/友顺
24+
TO-126TO-92
50000
全新原装,一手货源,全场热卖!

2SA16芯片相关品牌

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  • TI1
  • Vitec
  • ZSELEC

2SA16数据表相关新闻