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2SA16晶体管资料
2SA16别名:2SA16三极管、2SA16晶体管、2SA16晶体三极管
2SA16生产厂家:日本日立公司
2SA16制作材料:Ge-PNP
2SA16性质:调幅 (AM)_前置放大 (V)_混频 (M)
2SA16封装形式:直插封装
2SA16极限工作电压:12V
2SA16最大电流允许值:0.015A
2SA16最大工作频率:12MHZ
2SA16引脚数:3
2SA16最大耗散功率:
2SA16放大倍数:
2SA16图片代号:C-47
2SA16vtest:12
2SA16htest:12000000
- 2SA16atest:0.015
2SA16wtest:0
2SA16代换 2SA16用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,3AG54A,
2SA16价格
参考价格:¥0.2922
型号:2SA1618-GR(TE85L,F 品牌:Toshiba 备注:这里有2SA16多少钱,2025年最近7天走势,今日出价,今日竞价,2SA16批发/采购报价,2SA16行情走势销售排行榜,2SA16报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SwitchingPowerTransistor(-12APNP) SwitchingPowerTransistor | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SwitchingPowerTransistor(-15APNP)
| SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新电元工业株式会社 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithITO-220package •Switchingpowertransistor •Lowcollectorsaturationvoltage | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
GateDriver Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan | POWEREX Powerex Power Semiconductors | |||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE(SUPERMINITYPE) DESCRIPTION 2SA1602isasuperminipackageresinsealedsiliconPNPepitaxialtransistor, Itisdesignedforlowfrequencyvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●ExcellentlinearityofDCforwardgain. ●Superm | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE(Superminitype) FORLOWFREQUENCYAMPLIFYAPPLICATION FEATURE ・Superminipackageforeasymounting ・ExcellentlinearityofDCforwardgain ・Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax APPLICATION ForHybridIC,smalltypemachinelowfrequencyvoltageAmplifyappli | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE(Superminitype) FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603AisasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentl | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1603isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax ●Excellentli | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | |||
High-VoltageSwitching,AF100WDriverApplications High-VoltageSwitching,AF100WDriverApplications Features ·Micalesspackagefacilitatingmounting. Applications ·High-voltageswitching,AFpoweramplifier,100Woutputpredrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-SpeedSwitchingApplications High-SpeedSwitchingApplications Features •Fastswitchingspeed. •Highgain-bandwidthproduct. •Lowsaturationvoltage. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
PNPEpitaxialPlanarSiliconTransistors Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors Features ●Fastswitchingspeed. ●Highgain-bandwidthproduct. ●Lowsaturationvoltage. ●Complementaryto2SC4168-HF ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPSiliconEpitaxia ■Features ●HighfT:fT=400MHz ●Complementaryto2SC3739 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
HIGHFREQUENCYAMPLIFIERANDSWITCHINGPNPSILICONEPITAXIALTRANSISTOR FEATURES ●HighfT:fT=400MHz ●Complementaryto2SC3739 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR HIGHVOLTAGEAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR HIGHSPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
HIGHSPEEDSWITCHINGPNPSILICONEPITAXIALTRANSISTOR HIGHSPEEDSWITCHINGPNPSILICONEPITAXIALTRANSISTOR | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERPNPSILICONEPITAXIALTRANSISTOR FEATURES ●Complementaryto2SC4177 ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,Ic=-1.0mA) ●HighVoltage:VCEO=-50VCE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
PNPSiliconEpitaxia ■Features ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
Plastic-EncapsulatedTransistors SOT-323Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:-0.1A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
SOT-323Plastic-EncapsulateTransistors FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:-0.1A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
PNPSiliconEpitaxialPlanarTransistor FEATURES ●HighvoltageVCEO=-50V. ●ExcellentHFELinearity. ●HighDCcurrentgain:hFE=200typ. ●Complementaryto2SC4177. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
PNPSiliconPlasticEncapsulatedTransistor -0.1A,-60VPNPSiliconPlasticEncapsulatedTransistor FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SILICONTRANSISTOR AUDIOFREQUENCY,GENERALPURPOSEAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
PNPPlastic-EncapsulateTransistors FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177 | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
PNPPlastic-EncapsulateTransistors FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177 | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
PNPPlastic-EncapsulateTransistors FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177 | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
PNPPlastic-EncapsulateTransistors FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177 | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
PNPPlastic-EncapsulateTransistors FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177 | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
PNPSiliconEpitaxialPlanarTransistor PNPSiliconEpitaxialPlanarTransistor FEATURES HighvoltageVCEO=-50V. ExcellentHFELinearity. HighDCcurrentgain:hFE=200typ. Complementaryto2SC4177. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
AUDIOFREQUENCYHIGHGAINAMPLIFIERPNPSILICONEPITAXIALTRANSISTOR FEATURES ●Complementaryto2SC4180 ●HighDCCurrentGain:hFE500TYP.(VCE=-6.0V,IC=-1.0mA) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
PNPSiliconEpitaxialTransistor ■Features ●HighDCCurrentGain ●Complementaryto2SC4180 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SILICONTRANSISTOR AUDIOFREQUENCYHIGHGAINAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONTRANSISTOR AUDIOFREQUENCYAMPLIFIER,SWITCHING PNPSILICONEPITAXIALTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING DESCRIPTION The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandare idealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrent | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●LargeCurrentCapacity ●HighhFEandLowCollectorSaturationVoltage | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
PNPSiliconEpitaxialTransistorforHigh-speedSwitching FEATURES ●Largecurrentcapacity: IC(DC):-10A,IC(pulse):-15A. ●HighhFEandlowcollectorsaturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A) | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A •HighhFEandlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APP | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PTYPETTANSISTORS PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand | STANSON Stanson Technology | |||
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrentcapacity: IC | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrentcapacity: IC | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
PTYPETTANSISTORS PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand | STANSON Stanson Technology |
2SA16产品属性
- 类型
描述
- 型号
2SA16
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-1 -15V -.004A .02W
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
7345 |
原装现货,当天可交货,原型号开票 |
|||
22+ |
100000 |
代理渠道/只做原装/可含税 |
|||||
UTC/友顺 |
2024+ |
TO-252 |
500000 |
诚信服务,绝对原装原盘 |
|||
NEC |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
TO-92L |
4095 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
60000 |
||||||
UTC/友顺 |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NEC |
24+ |
TO92 |
27950 |
郑重承诺只做原装进口现货 |
|||
UTC |
23+ |
SOT-223 |
38421 |
现货库存,实单请给接受价格 |
|||
UTC/友顺 |
24+ |
TO-126TO-92 |
50000 |
全新原装,一手货源,全场热卖! |
2SA16规格书下载地址
2SA16参数引脚图相关
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- 2SA1585(S)
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- 2SA1581
- 2SA1580
- 2SA1579
- 2SA1577
- 2SA1576
- 2SA1575
- 2SA1572
- 2SA1568
- 2SA1567
- 2SA1566
- 2SA1564
2SA16数据表相关新闻
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