Switching Power Transistor(-12A PNP)

Switching Power Transistor

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

Switching Power Transistor(-15A PNP)

Gate Driver

Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE)

DESCRIPTION 2SA1602 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ● Excellent linearity of DC forward gain. ● Super m

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ・ Super mini package for easy mounting ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify appli

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent l

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li

High-Voltage Switching,AF 100W Driver Applications

High-Voltage Switching, AF 100W Driver Applications Features · Micaless package facilitating mounting. Applications · High-voltage switching, AF power amplifier, 100W output predrivers.

High-Speed Switching Applications

High-Speed Switching Applications Features • Fast switching speed. • High gain-bandwidth product. • Low saturation voltage.

PNP Epitaxial Planar Silicon Transistors

Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4168

PNP Transistors

Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4168-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

PNP Transistors

Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4168-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

PNP Transistors

Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4168-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

PNP Silicon Epitaxia

■ Features ● High fT : fT=400MHz ● Complementary to 2SC3739

HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● High fT : fT = 400 MHz ● Complementary to 2SC3739

SILICON TRANSISTOR

HIGH VOLTAGE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

SILICON TRANSISTOR

HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR

HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR

HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complementary to 2SC4177 ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, Ic = -1.0 mA) ● High Voltage: VCEO = -50 VCE

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

SILICON TRANSISTOR

AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

Plastic-Encapsulated Transistors

SOT-323 Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage VCEO=-50V. ● Excellent HFE Linearity. ● High DC current gain : hFE=200 typ. ● Complementary to 2SC4177. APPLICATIONS ● Audio frequency general purpose amplifier applications.

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Silicon Epitaxia

■ Features ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Silicon Plastic Encapsulated Transistor

-0.1A , -60V PNP Silicon Plastic Encapsulated Transistor FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor FEATURES High voltage VCEO=-50V. Excellent HFELinearity. High DC current gain : hFE=200 typ. Complementary to 2SC4177. APPLICATIONS Audio frequency general purpose amplifier applications.

SILICON TRANSISTOR

AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complementary to 2SC4180 ● High DC Current Gain: hFE 500 TYP. (VCE = -6.0 V, IC = -1.0 mA)

PNP Silicon Epitaxial Transistor

■ Features ● High DC Current Gain ● Complementary to 2SC4180

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTOR

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current

PNP Silicon Epitaxial Transistor for High-speed Switching

FEATURES ● Large current capacity: IC(DC):-10A,IC(pulse):-15A. ● High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Large Current Capacity ● High hFE and Low Collector Saturation Voltage

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC

P TYPE TTANSISTORS

P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC