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2SA141晶体管资料
2SA141别名：2SA141三极管、2SA141晶体管、2SA141晶体三极管
2SA141生产厂家：日本三菱公司
2SA141制作材料：Ge-PNP
2SA141性质：调幅 （AM）_中频放大 （ZF）
2SA141封装形式：直插封装
2SA141极限工作电压：15V
2SA141最大电流允许值：0.015A
2SA141最大工作频率：4MHZ
2SA141引脚数：3
2SA141最大耗散功率：
2SA141放大倍数：
2SA141图片代号：C-47
2SA141vtest：15
2SA141htest：4000000
- 2SA141atest：0.015
2SA141wtest：0
2SA141代换 2SA141用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,2SA203,3AG54A,
2SA141价格
参考价格：￥0.8586
型号：2SA1416S-TD-E 品牌：ON 备注：这里有2SA141多少钱，2025年最近7天走势，今日出价，今日竞价，2SA141批发/采购报价，2SA141行情走势销售排行榜，2SA141报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICONTRANSISTOR AUDIOFREQUENCYAMPLIFER,SWITCHINGPNPSILICONEPITAXIALTRANSISTOR | ETCList of Unclassifed Manufacturers 未分类制造商 |  |   | |
SiliconPNPEpitaxia SiliconPNPEpitaxia Features VeryhighDCcurrentgain:hFE=500to1600. HighVEBOVoltage:VEBO=-10V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | | |
SILICONTRANSISTOR AUDIOFREQUENCYAMPLIFIER,SWITCHING PNPSILICONEPITAXIALTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3??? DESCRIPTION The2SA1412-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−400V •HighSpeed:tf≤0.7μs •Complementto2SC3631-Z | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3??? DESCRIPTION The2SA1412-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−400V •HighSpeed:tf≤0.7μs •Complementto2SC3631-Z | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
PNPSiliconTransistor Features HighVoltage:VCEO=-400V Highspeed:tr≤0.7µs | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
iscSiliconNPNPowerTransistor DESCRIPTION •WithTO-252(DPAK)packaging •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Relaydrivers •High-speedinverters •Conver | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3??? DESCRIPTION The2SA1413-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−600V •HighSpeed:tf≤1.0μs •Complementto2SC3632-Z | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3??? DESCRIPTION The2SA1413-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−600V •HighSpeed:tf≤1.0μs •Complementto2SC3632-Z | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
PNPSiliconTransistor ■Features ●HighVoltage:VCEO=-600V ●HighSpeed:tf≤1us ●Complementto2SC3632-Z | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
iscSiliconPNPPowerTransistor DESCRIPTION •WithTO-252(DPAK)packaging •Largecollectorcurrent •Lowcollectorsaturationvoltage •Highpowerdissipation •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DesignedforuseinDC-DCconverter •Driverofsolenoido | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
High-VoltageSwitchingPredriverApplications High-VoltageSwitching,PredriverApplications Features •AdoptionofFBETprocess. •Highbreakdownvoltage(VCEO=160V). •ExcellentlinearityofhFEandsmallCob. •Fastswitchingspeed. •Ultrasmallsizemarkingiteasytoprovidehigh-density,small-sizedhybridICs. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
High-VoltageSwitching,PredriverApplications High-VoltageSwitching,PredriverApplications Features •AdoptionofFBETprocess. •Highbreakdownvoltage(VCEO=160V). •ExcellentlinearityofhFEandsmallCob. •Fastswitchingspeed. •Verysmallsizemarkingiteasytoprovidehighdensity,small-sizedhybridICs. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  | | |
High-VoltageSwitchingApplications Features â—AdoptionofFBETProcess â—HighBreakdownVoltage(VCEO=160V) â—ExcellentLinearlityofhFEandSmallCob â—FastSwitchingSpeed | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
High-VoltageSwitchingApplications Features ●AdoptionofFBET,MBITProcesses ●HighBreakdownVoltageandLargeCurrentCapacity ●FastSwitchingTime ●Complementaryto2SC3646 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor BipolarTransistor (-)100V,(-)2A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-densitysmall-sizedhybridICs | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-densitysmall-sizedhybridICs | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitchingApplications Features ●AdoptionofFBET,MBITProcesses ●HighBreakdownVoltageandLargeCurrentCapacity ●Complementaryto2SC3647 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
BipolarTransistor BipolarTransistor (-)100V,(-)2A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-densitysmall-sizedhybridICs | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor BipolarTransistor (-)100V,(-)2A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-densitysmall-sizedhybridICs | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitching,PreriverApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •ColorTVaudiooutput,inverter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor BipolarTransistor (–)160V,(–)0.7A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •Co | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingPreriverApplications BipolarTransistor (–)160V,(–)0.7A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •Co | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitching,PredriverApplications PNP/NPNEpitaxialPlanarSiliconTransistor Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •ColorTVaudiooutput,inver | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitchingApplications Features ●AdoptionofFBET,MBITProcesses ●HighBreakdownVoltageandLargeCurrentCapacity ●FastSwitchingSpeed ●Complementaryto2SC3648 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
High-VoltageSwitching,PreriverApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •ColorTVaudiooutput,inverter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingApplications Features ●AdoptionofFBET,MBITProcesses ●HighBreakdownVoltageandLargeCurrentCapacity ●Complementaryto2SC3649 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
High-VoltageSwitchingApplications PNP/NPNEpitaxialPlanarSiliconTransistor Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PNPTransistors 文件：598.58 Kbytes Page：1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：598.58 Kbytes Page：1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：598.58 Kbytes Page：1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
SILICONPOWERTRANSISTOR 文件：785.23 Kbytes Page：6 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTOR 文件：785.23 Kbytes Page：6 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SILICONPOWERTRANSISTOR 文件：927.8 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTOR 文件：927.8 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
PNPTransistors 文件：1.39437 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.39437 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.39437 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.39437 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.39007 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.40834 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.39007 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.40834 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.39007 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.40834 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.39007 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNPTransistors 文件：1.40834 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
High-VoltageSwitchingApplications 文件：457.35 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitchingApplications 文件：113.47 Kbytes Page：5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitchingApplications 文件：113.47 Kbytes Page：5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitchingApplications 文件：457.35 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | |
2SA141产品属性
- 类型
描述
- 型号
2SA141
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY NEC TRANSISTOR SC-59-25V -.15A .2W SURFACE MOUNT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
21+ |
TO-252 |
1400 |
原装现货假一赔十 |
|||
RENESAS/瑞萨 |
2511 |
TO-252 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
NEC |
23+ |
DIP |
437844 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
10000 |
只做原厂渠道 可追溯货源 |
|||
NEC |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
|||
NEC |
25+23+ |
To-252 |
30182 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
23+ |
TO-252-2 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
2020+ |
TO-251 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
19968 |
支持大陆交货,美金交易。原装现货库存。 |
|||
24+ |
SOT223 |
2500 |
2SA141芯片相关品牌
2SA141规格书下载地址
2SA141参数引脚图相关
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2SA141数据表相关新闻
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DdatasheetPDF页码索引
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