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2SA141晶体管资料

2SA141别名：2SA141三极管、2SA141晶体管、2SA141晶体三极管
2SA141生产厂家：日本三菱公司
2SA141制作材料：Ge-PNP
2SA141性质：调幅（AM）_中频放大（ZF）
2SA141封装形式：直插封装
2SA141极限工作电压：15V
2SA141最大电流允许值：0.015A
2SA141最大工作频率：4MHZ
2SA141引脚数：3
2SA141最大耗散功率：
2SA141放大倍数：
2SA141图片代号：C-47
2SA141vtest：15
2SA141htest：4000000
2SA141atest：0.015
2SA141wtest：0

2SA141代换 2SA141用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,2SA203,3AG54A,

2SA141价格

参考价格：￥0.8586

型号：2SA1416S-TD-E 品牌：ON 备注：这里有2SA141多少钱，2025年最近7天走势，今日出价，今日竞价，2SA141批发/采购报价，2SA141行情走势销售排行榜，2SA141报价。

型号	功能描述	生产厂家企业	LOGO
2SA1411	SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTOR	RENESAS 瑞萨	RENESAS
2SA1411	SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFER, SWITCHING PNP SILICON EPITAXIAL TRANSISTOR	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SA1411	Silicon PNP Epitaxia Silicon PNP Epitaxia Features Very high DC current gain:hFE=500 to 1600. High VEBOVoltage:VEBO=-10V	KEXIN 科信电子	KEXIN
2SA1412	PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3??? DESCRIPTION The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO= −400 V • High Speed: tf ≤0.7 μs • Complement to 2SC3631-Z	NEC 瑞萨	NEC
2SA1412-Z	PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3??? DESCRIPTION The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO= −400 V • High Speed: tf ≤0.7 μs • Complement to 2SC3631-Z	NEC 瑞萨	NEC
2SA1412-Z	isc Silicon NPN Power Transistor DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver	ISC 无锡固电	ISC
2SA1412-Z	PNP Silicon Transistor Features High Voltage: VCEO=-400V High speed : tr ≤ 0.7µs	KEXIN 科信电子	KEXIN
2SA1413	PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3??? DESCRIPTION The 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −600 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3632-Z	NEC 瑞萨	NEC
2SA1413-Z	PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3??? DESCRIPTION The 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −600 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3632-Z	NEC 瑞萨	NEC
2SA1413-Z	PNP Silicon Transistor ■Features ● High Voltage:VCEO=-600V ● High Speed : tf ≤ 1us ● Complement to 2SC3632-Z	KEXIN 科信电子	KEXIN
2SA1413-Z	isc Silicon PNP Power Transistor DESCRIPTION • With TO-252(DPAK) packaging • Large collector current • Low collector saturation voltage • High power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in DC-DC converter • Driver of solenoid o	ISC 无锡固电	ISC
2SA1415	High-Voltage Switching Applications Features â— Adoption of FBET Process â— High Breakdown Voltage (VCEO = 160V) â— Excellent Linearlity of hFE and Small Cob â— Fast Switching Speed	KEXIN 科信电子	KEXIN
2SA1415	High-Voltage Switching, Predriver Applications High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Very small size marking it easy to provide high density, small-sized hybrid ICs.	SANYO 三洋	SANYO
2SA1415	High-Voltage Switching Predriver Applications High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.	ONSEMI 安森美半导体	ONSEMI
2SA1416	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SA1416	High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	SANYO 三洋	SANYO
2SA1416	High-Voltage Switching Applications Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Fast Switching Time ● Complementary to 2SC3646	KEXIN 科信电子	KEXIN
2SA1416S-TD-E	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SA1416T-TD-E	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SA1417	Bipolar Transistor Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	ONSEMI 安森美半导体	ONSEMI
2SA1417	High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	SANYO 三洋	SANYO
2SA1417	High-Voltage Switching Applications Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Complementary to 2SC3647	KEXIN 科信电子	KEXIN
2SA1417S-TD-E	Bipolar Transistor Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	ONSEMI 安森美半导体	ONSEMI
2SA1417T-TD-E	Bipolar Transistor Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	ONSEMI 安森美半导体	ONSEMI
2SA1418	High-Voltage Switching, Preriver Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inverter	ONSEMI 安森美半导体	ONSEMI
2SA1418	Bipolar Transistor Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Co	ONSEMI 安森美半导体	ONSEMI
2SA1418	High-Voltage Switching Preriver Applications Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Co	ONSEMI 安森美半导体	ONSEMI
2SA1418	High-Voltage Switching, Predriver Applications PNP / NPN Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inver	SANYO 三洋	SANYO
2SA1418	High-Voltage Switching, Preriver Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inverter	ONSEMI 安森美半导体	ONSEMI
2SA1418	High-Voltage Switching Applications Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Fast Switching Speed ● Complementary to 2SC3648	KEXIN 科信电子	KEXIN
2SA1419	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SA1419	High-Voltage Switching Applications PNP / NPN Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	SANYO 三洋	SANYO
2SA1419	High-Voltage Switching Applications Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Complementary to 2SC3649	KEXIN 科信电子	KEXIN
2SA1419S-TD-E	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SA1419S-TD-H	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SA1419T-TD-E	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SA1419T-TD-H	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SA1411_15	PNP Transistors 文件：598.58 Kbytes Page：1 Pages	KEXIN 科信电子	KEXIN
2SA1411-M15	PNP Transistors 文件：598.58 Kbytes Page：1 Pages	KEXIN 科信电子	KEXIN
2SA1411-M16	PNP Transistors 文件：598.58 Kbytes Page：1 Pages	KEXIN 科信电子	KEXIN
2SA1412-Z	SILICON POWER TRANSISTOR 文件：785.23 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SA1412-Z	Bipolar Power Transistors	RENESAS 瑞萨	RENESAS
2SA1412-Z_15	PNP SILICON TRIPLE DIFFUSED TRANSISTOR 文件：785.23 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SA1413	Bipolar Power Transistors	RENESAS 瑞萨	RENESAS
2SA1413-Z	Bipolar Power Transistors	RENESAS 瑞萨	RENESAS
2SA1413-Z	SILICON POWER TRANSISTOR 文件：927.8 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
2SA1413-Z_15	PNP SILICON TRIPLE DIFFUSED TRANSISTOR 文件：927.8 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
2SA1413-Z_15	PNP Transistors 文件：1.39437 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1413-Z-K	PNP Transistors 文件：1.39437 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1413-Z-L	PNP Transistors 文件：1.39437 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1413-Z-M	PNP Transistors 文件：1.39437 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1415_15	PNP Transistors 文件：1.39007 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1415-HF_15	PNP Transistors 文件：1.40834 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1415-R	PNP Transistors 文件：1.39007 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1415-R-HF	PNP Transistors 文件：1.40834 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1415-S	PNP Transistors 文件：1.39007 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1415-S-HF	PNP Transistors 文件：1.40834 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1415-T	PNP Transistors 文件：1.39007 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1415-T-HF	PNP Transistors 文件：1.40834 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1416	High-Voltage Switching Applications 文件：457.35 Kbytes Page：7 Pages	SANYO 三洋	SANYO

2SA141产品属性

类型
描述
型号
2SA141
制造商
Distributed By MCM
功能描述
SUB ONLY NEC TRANSISTOR SC-59-25V -.15A .2W SURFACE MOUNT

2SA141供应商更多...

更新时间：2025-12-25 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	2SA1412-Z-E1-AZ	RENESAS	2511	TO252	461	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
贸泽芯城（深圳）电子科技有限公司	2SA1412-Z-T1	NEC	23+	SOT25	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市得捷芯城科技有限公司	2SA1412-Z-E1-AZ	RENESAS/瑞萨	24+	NA/	4340	原装现货,当天可交货,原型号开票	询价
洪芯国际半导体（深圳）有限公司	2SA1412-Z-E1/A1412	NEC	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
中天科工半导体（深圳）有限公司	2SA1412-Z-E1	NEC	25+	TO-252	32000	NEC全新特价2SA1412-Z-E1即刻询购立享优惠#长期有货	询价
艾睿（深圳）半导体有限公司	2SA1412-Z-E1	NEC	2447	TO-252	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市莱克讯科技有限公司	2SA1412-Z-E1	NEC	1922+	TO252	7823	原装进口现货库存专业工厂研究所配单供货	询价
深圳市安富世纪电子有限公司	2SA1412-Z-E1	RENESAS/瑞萨	20+	TO-252	32500	现货很近!原厂很远!只做原装	询价
深圳市威尔健半导体有限公司	2SA1412-Z-E1-k	NEC/RENESAS	23+	252-251	50000	全新原装正品现货,支持订货	询价
深圳市华斯顿科技有限公司	2SA1412	NEC	25+23+	To-252	30182	绝对原装正品全新进口深圳现货	询价

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2SA141晶体管资料

2SA141价格

2SA141产品属性

2SA141供应商更多...

2SA141芯片相关品牌

2SA141规格书下载地址

2SA141参数引脚图相关

2SA141数据表相关新闻

2SA1037-R-TP

2SA1037AKT146Q

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DdatasheetPDF页码索引