PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO= −400 V • High Speed: tf ≤0.7 μs • Complement to 2SC3631-Z

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage: VCEO = −400 V\n• High Speed: tf ≤ 0.7 μs\n• Complement to 2SC3631-Z;

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage: VCEO = −400 V\n• High Speed: tf ≤ 0.7 μs\n• Complement to 2SC3631-Z;

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO= −400 V • High Speed: tf ≤0.7 μs • Complement to 2SC3631-Z

丝印代码：DPAK；isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver

PNP Silicon Transistor

Features High Voltage: VCEO=-400V High speed : tr ≤ 0.7µs

SILICON POWER TRANSISTOR

文件：785.23 Kbytes Page：6 Pages

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

文件：785.23 Kbytes Page：6 Pages