PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −600 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3632-Z

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage: VCEO = −600 V\n• High Speed: tf =≤ 1.0 μs\n• Complement to 2SC3632-Z;

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage: VCEO = −600 V\n• High Speed: tf =≤ 1.0 μs\n• Complement to 2SC3632-Z;

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −600 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3632-Z

PNP Silicon Transistor

■Features ● High Voltage:VCEO=-600V ● High Speed : tf ≤ 1us ● Complement to 2SC3632-Z

丝印代码：DPAK；isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Large collector current • Low collector saturation voltage • High power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in DC-DC converter • Driver of solenoid o

SILICON POWER TRANSISTOR

文件：927.8 Kbytes Page：7 Pages

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

文件：927.8 Kbytes Page：7 Pages

PNP Transistors

文件：1.39437 Mbytes Page：3 Pages

PNP Transistors

文件：1.39437 Mbytes Page：3 Pages

PNP Transistors

文件：1.39437 Mbytes Page：3 Pages

PNP Transistors

文件：1.39437 Mbytes Page：3 Pages