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2SA14晶体管资料
2SA14别名：2SA14三极管、2SA14晶体管、2SA14晶体三极管
2SA14生产厂家：日本日立公司
2SA14制作材料：Ge-PNP
2SA14性质：射频/高频放大 （HF）_中频放大 （ZF）
2SA14封装形式：直插封装
2SA14极限工作电压：16V
2SA14最大电流允许值：0.015A
2SA14最大工作频率：4MHZ
2SA14引脚数：3
2SA14最大耗散功率：
2SA14放大倍数：
2SA14图片代号：C-47
2SA14vtest：16
2SA14htest：4000000
- 2SA14atest：0.015
2SA14wtest：0
2SA14代换 2SA14用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,3AG54A,
2SA14价格
参考价格：￥0.8586
型号：2SA1416S-TD-E 品牌：ON 备注：这里有2SA14多少钱，2025年最近7天走势，今日出价，今日竞价，2SA14批发/采购报价，2SA14行情走势销售排行榜，2SA14报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3? PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  |   | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3? PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
SiliconTransistor Features ●HighVoltage:VCEO=-400V ●Highspeed:tr1.0ìs | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | | |
SILICONPOWERTRANSISTOR PNPSILICONTRIPLEDIFFUSEDTRANSISTOR DESCRIPTION The2SA1400-ZisdesignedforHighVoltageSwitching,especiallyin HybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−400V •HighSpeed:tf≤1.0μs •Complementto2SC3588-Z | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
Ultrahigh-DefinitionCRTDisplayVideoOutputApplications? Ultrahigh-DefinitionCRTDisplayVideoOutputApplications Features •HighfT:fTtyp=700MHz. •Smallreversetransfercapacitanceandexcellenthigh-frequencycharacteristic:Cre=1.8pF(NPN),2.3pF(PNP). •Complementarypairwiththe2SA1402/2SC3596. •AdoptionofFBETprocess. Applicatio | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  | | |
Ultrahigh-DefinitionCRTDisplayVideoOutputApplications? Ultrahigh-DefinitionCRTDisplayVideoOutputApplications Features •HighfT:fTtyp=800MHz. •Smallreversetransfercapacitanceandexcellenthigh-frequencycharacteristic:Cre=2.9pF(NPN),4.6pF(PNP). •Complementarypairwiththe2SA1403/2SC3597. •AdoptionofFBETprocss. Applic | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Ultrahigh-DefinitionCRTDisplayVideoOutputApplications? Ultrahigh-DefinitionCRTDisplayVideoOutputApplications Features •HighfT:fTtyp=500MHz. •Highbreakdownvoltage:VCEO≥120V. •Smallreversetransfercapacitanceandexcellenthigh-frequencycharacteristic:Cre=1.6pF(NPN),2.1pF(PNP). •Complementarypairwiththe2SA1404/2SC3598. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Ultrahigh-DefinitionCRTDisplayVideoOutputApplications? Ultrahigh-DifinitionCRTDisplayVideoOutputApplications Features ·HighfT:fTtyp=500MHz. ·Highbreakdownvoltage:VCEO≥120V. ·Smallreversetransfercapacitanceandexcellenthigh-frequnecycharacteristic :Cre=2.5pF(NPN),3.8pF(PNP). ·Complementarypairwiththe2SA1405/2SC3599. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
high-DefinitionCRTDisplayVideoOutputApplications? Ultrahigh-DefinitionCRTDisplayVideoOutputApplications Features •HighfT:fTtyp=400MHz. •Highbreakdownvoltage:VCEO≥200V. •SmallreversetransfercapacitanceandexcellentHFresponse:Cre=1.4pF(NPN),1.7pF(PNP). •ComplementaryPNPandNPNtypes. •AdoptionofFBETprocess. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Ultrahigh-DefinitionCRTDisplayVideoOutputApplications? Ultrahigh-DefinitionCRTDisplayVideoOutputApplications Features ·HighfT:fTtyp=400MHz. ·Highbreakdownvoltage:VCEO≥200V. ·Smallreversetransfercapacitanceandexcellenthigh-frequencycharacteristic :Cre=2.0pF(NPN),2.5pF(PNP). ·ComplementaryPNPandNPNtypes. ·Adoptiono | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
TRANSISTOR(COLORTVVERT.DEFLECTION,CLASSBSOUNDOUTPUTAPPLICATIONS) ColorTVVerticalDeflectionOutputApplications ColorTVClass-BSoundOutputApplications •Largecollectorcurrentandcollectorpowerdissipationcapability •Recommendedforverticaldeflectionoutputandsoundoutputapplicationsforline-operatedTV. •Complementaryto2SC3621 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  | | |
SILICONTRANSISTOR AUDIOFREQUENCYAMPLIFER,SWITCHINGPNPSILICONEPITAXIALTRANSISTOR | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
SiliconPNPEpitaxia SiliconPNPEpitaxia Features VeryhighDCcurrentgain:hFE=500to1600. HighVEBOVoltage:VEBO=-10V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
SILICONTRANSISTOR AUDIOFREQUENCYAMPLIFIER,SWITCHING PNPSILICONEPITAXIALTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3??? DESCRIPTION The2SA1412-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−400V •HighSpeed:tf≤0.7μs •Complementto2SC3631-Z | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3??? DESCRIPTION The2SA1412-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−400V •HighSpeed:tf≤0.7μs •Complementto2SC3631-Z | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
PNPSiliconTransistor Features HighVoltage:VCEO=-400V Highspeed:tr≤0.7µs | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
iscSiliconNPNPowerTransistor DESCRIPTION •WithTO-252(DPAK)packaging •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Relaydrivers •High-speedinverters •Conver | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3??? DESCRIPTION The2SA1413-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−600V •HighSpeed:tf≤1.0μs •Complementto2SC3632-Z | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
PNPSILICONTRIPLEDIFFUSEDTRANSISTORMP-3??? DESCRIPTION The2SA1413-ZisdesignedforHighVoltageSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighVoltage:VCEO=−600V •HighSpeed:tf≤1.0μs •Complementto2SC3632-Z | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
PNPSiliconTransistor ■Features ●HighVoltage:VCEO=-600V ●HighSpeed:tf≤1us ●Complementto2SC3632-Z | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
iscSiliconPNPPowerTransistor DESCRIPTION •WithTO-252(DPAK)packaging •Largecollectorcurrent •Lowcollectorsaturationvoltage •Highpowerdissipation •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DesignedforuseinDC-DCconverter •Driverofsolenoido | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
High-VoltageSwitchingPredriverApplications High-VoltageSwitching,PredriverApplications Features •AdoptionofFBETprocess. •Highbreakdownvoltage(VCEO=160V). •ExcellentlinearityofhFEandsmallCob. •Fastswitchingspeed. •Ultrasmallsizemarkingiteasytoprovidehigh-density,small-sizedhybridICs. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
High-VoltageSwitching,PredriverApplications High-VoltageSwitching,PredriverApplications Features •AdoptionofFBETprocess. •Highbreakdownvoltage(VCEO=160V). •ExcellentlinearityofhFEandsmallCob. •Fastswitchingspeed. •Verysmallsizemarkingiteasytoprovidehighdensity,small-sizedhybridICs. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitchingApplications Features â—AdoptionofFBETProcess â—HighBreakdownVoltage(VCEO=160V) â—ExcellentLinearlityofhFEandSmallCob â—FastSwitchingSpeed | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
High-VoltageSwitchingApplications Features ●AdoptionofFBET,MBITProcesses ●HighBreakdownVoltageandLargeCurrentCapacity ●FastSwitchingTime ●Complementaryto2SC3646 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor BipolarTransistor (-)100V,(-)2A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-densitysmall-sizedhybridICs | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-densitysmall-sizedhybridICs | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitchingApplications Features ●AdoptionofFBET,MBITProcesses ●HighBreakdownVoltageandLargeCurrentCapacity ●Complementaryto2SC3647 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
BipolarTransistor BipolarTransistor (-)100V,(-)2A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-densitysmall-sizedhybridICs | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor BipolarTransistor (-)100V,(-)2A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-densitysmall-sizedhybridICs | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitching,PreriverApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •ColorTVaudiooutput,inverter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor BipolarTransistor (–)160V,(–)0.7A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •Co | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingPreriverApplications BipolarTransistor (–)160V,(–)0.7A,LowVCE(sat),(PNP)NPNSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •Co | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingApplications Features ●AdoptionofFBET,MBITProcesses ●HighBreakdownVoltageandLargeCurrentCapacity ●FastSwitchingSpeed ●Complementaryto2SC3648 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
High-VoltageSwitching,PredriverApplications PNP/NPNEpitaxialPlanarSiliconTransistor Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •ColorTVaudiooutput,inver | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitching,PreriverApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s Applicaitons •ColorTVaudiooutput,inverter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High-VoltageSwitchingApplications PNP/NPNEpitaxialPlanarSiliconTransistor Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageSwitchingApplications Features ●AdoptionofFBET,MBITProcesses ●HighBreakdownVoltageandLargeCurrentCapacity ●Complementaryto2SC3649 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistorHighbreakdownvoltageandlargecurrentcapacity Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Ultrasmallsizemakingiteasytoprovidehigh-density,small-sizedhybridIC’s | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PNP/NPNEPITAXIALPLANARSILICONTRANSISTORS SwitchingApplications(withBiasResistor) Features Withbiasresistor(R1=47kΩ,R2=47kΩ) Use Switchingcircuit,invertercircuit,interfacecircuit,drivercircuit | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
TRANSISTOR(POWERAMPLIFIER,DRIVERSTAGEAMPLIFIERAPPLICATIONS) PowerAmplifierApplications Driver-StageAmplifierApplications •Complementaryto2SC3665. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
TRANSISTOR(AUDIOPOWERAMPLIFIERAPPLICATIONS) AudioPowerAmplifierApplications •HighhFE:hFE=100to320 •1-Woutputapplications •Complementaryto2SC3666. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications •Lowcollector-emittersaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SC3668 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SC3669. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
STOROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS) StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140to600(VCE=−1V,IC=−0.5A) :hFE(2)=60(min),120(typ.)(VCE=−1V,IC=−4A) •Lowsaturationvoltage:VCE(sat)=−0.5V(max) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
TRANSISTOR(STOROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS) StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgainandexcellenthFElinearity :hFE(1)=100to320(VCE=−2V,IC=−0.5A) :hFE(2)=70(min)(VCE=−2V,IC=−4A) •Lowsaturationvoltage:VCE(sat)=−1.0V(max) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
TRANSISTOR(HIGHVOLTAGECONTROL,PLASMADISPLAY,NIXIETUBEDRIVER,CATHODERAYTUBEBRIGHTNESSCONTROLAPPLICATIONS) HighVoltageControlApplications PlasmaDisplay,NixieTubeDriverApplications CathodeRayTubeBrightnessControlApplications •Highvoltage:VCBO=−300V,VCEO=−300V •Lowsaturationvoltage:VCE(sat)=−0.5V(max) •Smallcollectoroutputcapacitance:Cob=6pF(typ.) •Compleme | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
High-DefinitionCRTDisplayApplications??? TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
PNPEpitaxialPlanarSiliconTransistor Features ●AdoptionofFBETprocess. ●HighDCcurrentgain(hFE=500to1200). ●Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.5V). ●HighVEBO(VEBO≥15V). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | |
2SA14产品属性
- 类型
描述
- 型号
2SA14
- 制造商
Renesas Electronics
- 功能描述
PNP Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
23+ |
SOT-89 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
22+ |
SOT89 |
20000 |
保证原装正品,假一陪十 |
|||
NEC |
2447 |
SOT-89 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
1922+ |
SOT-89 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NEC |
23+ |
SOT-89 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
24+ |
SOT-89 |
72600 |
新进库存/原装 |
|||
SANYO |
23+ |
SOT-89 |
1000 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
23+ |
SOT-89 |
360000 |
交期准时服务周到 |
|||
NEC |
2023+ |
SOT-89 |
50000 |
原装现货 |
2SA14芯片相关品牌
2SA14规格书下载地址
2SA14参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 3579
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- 2sc4226
- 2SA1428
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- 2SA1419
- 2SA1418
- 2SA1417
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- 2SA1415
- 2SA1413-Z
- 2SA1413
- 2SA1412-Z
- 2SA1412
- 2SA1411
- 2SA1410
- 2SA141
- 2SA1409
- 2SA1408
- 2SA1407
- 2SA1406
- 2SA1405
- 2SA1404
- 2SA1403
- 2SA1402
- 2SA1401
- 2SA1400
- 2SA1399
- 2SA1398
- 2SA1397
- 2SA1396
- 2SA1395
- 2SA1394
- 2SA1393
- 2SA1392
- 2SA1391
- 2SA1390
- 2SA139
- 2SA1389
- 2SA1388
- 2SA1387
- 2SA1386A
- 2SA1386
- 2SA1385
- 2SA1384
- 2SA1383
- 2SA1382
- 2SA1381
- 2SA1380
- 2SA1376
- 2SA1374
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支持实单价格优势有单必成
2022-3-302SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-242SA1036KT146R一级代理进口原装现货尽在-宇集芯电子
2SA1036KT146R 2SA1036KT146R
2019-5-9
DdatasheetPDF页码索引
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