PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3?

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3?

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

SILICON POWER TRANSISTOR

PNP SILICON TRIPLE DIFFUSED TRANSISTOR DESCRIPTION The 2SA1400-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −400 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3588-Z

Silicon Transistor

Features ● High Voltage: VCEO=-400V ● High speed:tr 1.0ìs

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features • High fT: fT typ=700MHz. • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). • Complementary pair with the 2SA1402/2SC3596. • Adoption of FBET process. Applicatio

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features • High fT : fT typ=800MHz. • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.9pF (NPN), 4.6pF (PNP). • Complementary pair with the 2SA1403/2SC3597. • Adoption of FBET procss. Applic

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features • High fT : fT typ=500MHz. • High breakdown voltage : VCEO≥120V. • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.6pF (NPN), 2.1pF (PNP). • Complementary pair with the 2SA1404/2SC3598.

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Difinition CRT Display Video Output Applications Features · High fT : fTtyp=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=2.5pF (NPN), 3.8pF (PNP). · Complementary pair with the 2SA1405/2SC3599.

high-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features • High fT : fT typ=400MHz. • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). • Complementary PNP and NPN types. • Adoption of FBET process.

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features · High fT: fTtyp=400MHz. · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.0pF (NPN), 2.5pF (PNP). · Complementary PNP and NPN types. · Adoption o

TRANSISTOR (COLOR TV VERT. DEFLECTION, CLASS B SOUND OUTPUT APPLICATIONS)

Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications • Large collector current and collector power dissipation capability • Recommended for vertical deflection output and sound output applications for line-operated TV. • Complementary to 2SC3621

Silicon PNP Epitaxia

Silicon PNP Epitaxia Features Very high DC current gain:hFE=500 to 1600. High VEBOVoltage:VEBO=-10V

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTOR

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFER, SWITCHING PNP SILICON EPITAXIAL TRANSISTOR

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO= −400 V • High Speed: tf ≤0.7 μs • Complement to 2SC3631-Z

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO= −400 V • High Speed: tf ≤0.7 μs • Complement to 2SC3631-Z

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver

PNP Silicon Transistor

Features High Voltage: VCEO=-400V High speed : tr ≤ 0.7µs

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −600 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3632-Z

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3???

DESCRIPTION The 2SA1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −600 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3632-Z

PNP Silicon Transistor

■Features ● High Voltage:VCEO=-600V ● High Speed : tf ≤ 1us ● Complement to 2SC3632-Z

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Large collector current • Low collector saturation voltage • High power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in DC-DC converter • Driver of solenoid o

High-Voltage Switching Applications

Features ● Adoption of FBET Process ● High Breakdown Voltage (VCEO = 160V) ● Excellent Linearlity of hFE and Small Cob ● Fast Switching Speed

High-Voltage Switching Predriver Applications

High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.

High-Voltage Switching, Predriver Applications

High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Very small size marking it easy to provide high density, small-sized hybrid ICs.

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

High-Voltage Switching Applications

Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Fast Switching Time ● Complementary to 2SC3646

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Bipolar Transistor

Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs

High-Voltage Switching Applications

Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Complementary to 2SC3647

Bipolar Transistor

Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs

Bipolar Transistor

Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs

High-Voltage Switching, Preriver Applications

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inverter

High-Voltage Switching, Preriver Applications

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inverter

Bipolar Transistor

Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Co

High-Voltage Switching Preriver Applications

Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Co

High-Voltage Switching, Predriver Applications

PNP / NPN Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inver

High-Voltage Switching Applications

Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Fast Switching Speed ● Complementary to 2SC3648

High-Voltage Switching Applications

Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Complementary to 2SC3649

High-Voltage Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications( with Bias Resistor) Features With bias resistor (R1 = 47kΩ , R2 = 47kΩ) Use Switching circuit, inverter circuit, interface circuit, driver circuit

TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Driver-Stage Amplifier Applications • Complementary to 2SC3665.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Audio Power Amplifier Applications • High hFE: hFE= 100 to 320 • 1-W output applications • Complementary to 2SC3666.

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3668

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3669.

STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFElinearity : hFE (1)= 140 to 600 (VCE= −1 V, IC= −0.5 A) : hFE (2)= 60 (min), 120 (typ.) (VCE= −1 V, IC= −4 A) • Low saturation voltage: VCE (sat)= −0.5 V (max)

TRANSISTOR (STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE(1)= 100 to 320 (VCE= −2 V, IC= −0.5 A) : hFE(2)= 70 (min) (VCE= −2 V, IC= −4 A) • Low saturation voltage: VCE (sat)= −1.0 V (max)

TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO= −300 V, VCEO= −300 V • Low saturation voltage: VCE (sat)= −0.5 V (max) • Small collector output capacitance: Cob= 6 pF (typ.) • Compleme

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

High-Definition CRT Display Applications???

Transistors for TV Display Video Output Use

High-hFE, Low-Frequency General-Purpose Amp Applications?

High hFE, Low-Frequency General-Purpose Amp Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuits. Features · Very small-sized package permitting 2SA1434-used sets to be made smaller, slimer. · Adoption of FBET process. · High DC curre