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2SA124晶体管资料

2SA124别名：2SA124三极管、2SA124晶体管、2SA124晶体三极管
2SA124生产厂家：日本索尼公司
2SA124制作材料：Ge-PNP
2SA124性质：调频（FM）
2SA124封装形式：
2SA124极限工作电压：15V
2SA124最大电流允许值：0.002A
2SA124最大工作频率：120MHZ
2SA124引脚数：
2SA124最大耗散功率：
2SA124放大倍数：
2SA124图片代号：NO
2SA124vtest：15
2SA124htest：120000000
2SA124atest：0.002
2SA124wtest：0

2SA124代换 2SA124用什么型号代替：AF106,AF124,AF125,AF306,2N3323,2N3324,2N3325,2AS340,2SA341,2SA342,3AG53D,

型号	功能描述	生产厂家企业	LOGO
2SA1240	DIFFERENTIAL AMP APPLICATIONS Differential Amp Applications	SANYO 三洋	SANYO
2SA1241	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076	TOSHIBA 东芝	TOSHIBA
2SA1241	Power Amplifier Applications Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076	TOSHIBA 东芝	TOSHIBA
2SA1241	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076	TOSHIBA 东芝	TOSHIBA
2SA1241	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1241	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·High transition frequency ·Complementary to 2SC3076 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1241	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·High transition frequency ·Complementary to 2SC3076 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1241-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·High transition frequency ·Complementary to 2SC3076 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1241-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·High transition frequency ·Complementary to 2SC3076 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1241-O	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076	TOSHIBA 东芝	TOSHIBA
2SA1241-Y	Power Amplifier Applications Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3076	TOSHIBA 东芝	TOSHIBA
2SA1242	Silicon PNP Epitaxial Type FEATURES ● Excellent hFE linearity. ● Low collector saturation voltage. ● High power dissipation. APPLICATIONS ● Strobe Flash Applications. ● Medium Power Amplifier Applications.	BILIN 银河微电	BILIN
2SA1242	isc Silicon PNP Power Transistor DESCRIPTION • hFE=100-320(IC= -0.5A; VCE= -2V) • hFE=70(Min)(IC= -4A; VCE= -2V) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) •·High Power Dissipation- : PC= 10W@TC=25℃ ,PC= 10W@Ta=25℃ • Minimum Lot-to-Lot variations for robust device performance and	ISC 无锡固电	ISC
2SA1242	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1242	TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low collector saturation voltage : VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) • High pow	TOSHIBA 东芝	TOSHIBA
2SA1242	TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Strobe Flash Applications Medium Power Amplifier Applications ● Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) ● Low Collector Saturation Voltage : VCE (sat) = −1.0 V (max) (IC = −	JIANGSU 长电科技	JIANGSU
2SA1242	Silicon PNP Power Transistor DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati	ISC 无锡固电	ISC
2SA1242	Silicon PNP Power Transistor DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati	ISC 无锡固电	ISC
2SA1242	Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Excellent hFE linearity, low VCE(sat), high PC. Applications Strobe flash applications, medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1242-251	Silicon PNP Power Transistor DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati	ISC 无锡固电	ISC
2SA1242-252	Silicon PNP Power Transistor DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati	ISC 无锡固电	ISC
2SA1243	POWER AMPLIFIER APPLICATIONS. Features -Good Linearity of hFE -Complementary to 2SC3073	TOSHIBA 东芝	TOSHIBA
2SA1244	TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074	TOSHIBA 东芝	TOSHIBA
2SA1244	High Current Switching Applications High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074	TOSHIBA 东芝	TOSHIBA
2SA1244	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1244	isc Silicon PNP Power Transistorisc DESCRIPTION • With TO-251(IPAK) packaging • High speed switching time • Low collector saturation voltage • Complement to type 2SC3074 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Medium power dissipation	ISC 无锡固电	ISC
2SA1244_10	High Current Switching Applications High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074	TOSHIBA 东芝	TOSHIBA
2SA1244-YQ	High Current Switching Applications High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074	TOSHIBA 东芝	TOSHIBA
2SA1245	TRANSISTOR (HIGH FREQUENCY AMPLIFIER AND SWITCHING, VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications	TOSHIBA 东芝	TOSHIBA
2SA1245	Silicon Pnp Epitaxial Planar Type Silicon Pnp Epitaxial Planar Type	KEXIN 科信电子	KEXIN
2SA1246	High-VEBO,AF Amp Applications High-VEBO, AF Amp Applications Features · High VEBO. · Wide ASO and highly resistant to breakdown.	SANYO 三洋	SANYO
2SA1248	160V/700mA Switching Applications Features · High breakdown voltage. · Large current capacity. · Using MBIT process	SANYO 三洋	SANYO
2SA1248	160V/700mA Switching Applications 160V/700mA switching application Uses · Color TV sound output, converters, inverters Features · High breakdown voltage. · Large current capacity. · Using MBIT process	SANYO 三洋	SANYO
2SA1248_V01	160V/700mA Switching Applications Features · High breakdown voltage. · Large current capacity. · Using MBIT process	SANYO 三洋	SANYO
2SA1249	160V/1.5A Switching Applications 160V/1.5A Switching Applications Uses · Color TV sound output, converters, inverters. Features · High breakdown voltage. · Large current capacity. · Adoption of MBIT process.	SANYO 三洋	SANYO
2SA1249	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC3117 • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output, converters, Inverters applications	ISC 无锡固电	ISC
2SA1249	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC3117 • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output, converters, Inverters applications	SAVANTIC	SAVANTIC
2SA1249	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC3117 • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output, converters, Inverters applications	JMNIC 锦美电子	JMNIC
2SA1241	Power transistor for high-speed switching applications	TOSHIBA 东芝	TOSHIBA
2SA1241	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 文件：189 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1241	Power Amplifier Applications Power Switching Applications 文件：197.33 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1241_09	Power Amplifier Applications Power Switching Applications 文件：197.33 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1241Y	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 文件：189 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1242	Strobe Flash Applications Medium Power Amplifier Applications 文件：158 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1242	Strobe Flash Applications Medium Power Amplifier Applications 文件：161.07 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1242	Power transistor for high-speed switching applications	TOSHIBA 东芝	TOSHIBA
2SA1242_07	Strobe Flash Applications Medium Power Amplifier Applications 文件：158 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1242_10	Strobe Flash Applications Medium Power Amplifier Applications 文件：161.07 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1244	High Current Switching Applications 文件：169.34 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1244	Power transistor for high-speed switching applications	TOSHIBA 东芝	TOSHIBA
2SA1244_07	High Current Switching Applications 文件：169.34 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1244_15	PNP Transistors 文件：1.2031 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1244-Y(Q)	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装描述：TRANS PNP 50V 5A PW-MOLD 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SA1244-Y(T6L1,NQ)	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：PB-F POWER TRANSISTOR; PW-MOLD; 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SA1249	Silicon PNP Power Transistor 文件：128.13 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1249	Silicon PNP Power Transistors 文件：211.08 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SA1249_15	Silicon PNP Power Transistors 文件：211.08 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC

2SA124产品属性

类型
描述
型号
2SA124
制造商
Distributed By MCM
功能描述
SUB ONLY TOSHIBA TRANSISTORSC-64 -50V -2A 1W BCE

2SA124供应商更多...

更新时间：2025-12-25 15:05:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市祥瑞智科技有限公司	2SA1249S	Sanyo	25+		22000	原厂原装,价格优势	询价
艾睿（深圳）半导体有限公司	2SA1249S	SANYO/三洋	2447	TO-126	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市创新迹电子有限公司	2SA1249	SANYO/三洋	22+	T0-126	20000	只做原装	询价
深圳市科芯源微电子有限公司	2SA1249S	SANYO/三洋	25+	TO126	54648	百分百原装现货实单必成欢迎询价	询价
贸泽芯城（深圳）电子科技有限公司	2SA1249S-TL	SANYO/三洋	23+	TO-126	688888	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市明嘉莱科技有限公司	2SA1249S	SANYO/三洋	24+	TO126	990000	明嘉莱只做原装正品现货	询价
深圳市豪迈兴电子有限公司	2SA1249	sanyo	24+	TO-126	8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市一线半导体有限公司	2SA1249		24+	TO-126	10000	全新	询价
深圳市亿智腾科技有限公司	2SA1249	sanyo	24+	TO-126	6540	原装现货/欢迎来电咨询	询价
深圳市博中泰实业有限公司	2SA1249R	SANYO/三洋	24+	T0-126	60000		询价

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2SA124晶体管资料

2SA124产品属性

2SA124供应商更多...

2SA124芯片相关品牌

2SA124规格书下载地址

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