TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon PNP Power Transistorisc

DESCRIPTION • With TO-251(IPAK) packaging • High speed switching time • Low collector saturation voltage • Complement to type 2SC3074 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Medium power dissipation

High Current Switching Applications

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Power transistor for high-speed switching applications

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

High Current Switching Applications

文件：169.34 Kbytes Page：5 Pages

PNP Transistors

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封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS PNP 50V 5A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：PB-F POWER TRANSISTOR; PW-MOLD; 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个