Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon PNP Epitaxial Type

FEATURES ● Excellent hFE linearity. ● Low collector saturation voltage. ● High power dissipation. APPLICATIONS ● Strobe Flash Applications. ● Medium Power Amplifier Applications.

isc Silicon PNP Power Transistor

DESCRIPTION • hFE=100-320(IC= -0.5A; VCE= -2V) • hFE=70(Min)(IC= -4A; VCE= -2V) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) •·High Power Dissipation- : PC= 10W@TC=25℃ ,PC= 10W@Ta=25℃ • Minimum Lot-to-Lot variations for robust device performance and

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati

TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low collector saturation voltage : VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) • High pow

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Strobe Flash Applications Medium Power Amplifier Applications ● Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) ● Low Collector Saturation Voltage : VCE (sat) = −1.0 V (max) (IC = −

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Excellent hFE linearity, low VCE(sat), high PC. Applications Strobe flash applications, medium power amplifier applications.

Power transistor for high-speed switching applications

Strobe Flash Applications Medium Power Amplifier Applications

文件：158 Kbytes Page：4 Pages

Strobe Flash Applications Medium Power Amplifier Applications

文件：161.07 Kbytes Page：4 Pages

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati

Silicon PNP Power Transistor

DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ APPLICATIONS ·For medium power amplifier and strobe flash applicati

Strobe Flash Applications Medium Power Amplifier Applications

文件：158 Kbytes Page：4 Pages

Strobe Flash Applications Medium Power Amplifier Applications

文件：161.07 Kbytes Page：4 Pages

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS PNP 20V 5A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个