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2SA112晶体管资料

  • 2SA112别名:2SA112三极管、2SA112晶体管、2SA112晶体三极管

  • 2SA112生产厂家:日本富士通公司

  • 2SA112制作材料:Ge-PNP

  • 2SA112性质:调幅 (AM)_混频 (M)

  • 2SA112封装形式:直插封装

  • 2SA112极限工作电压:20V

  • 2SA112最大电流允许值:0.01A

  • 2SA112最大工作频率:20MHZ

  • 2SA112引脚数:3

  • 2SA112最大耗散功率

  • 2SA112放大倍数

  • 2SA112图片代号:D-58

  • 2SA112vtest:20

  • 2SA112htest:20000000

  • 2SA112atest:0.01

  • 2SA112wtest:0

  • 2SA112代换 2SA112用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG54A,

2SA112价格

参考价格:¥1.6155

型号:2SA11230RA 品牌:Panasonic 备注:这里有2SA112多少钱,2026年最近7天走势,今日出价,今日竞价,2SA112批发/采购报价,2SA112行情走势销售排行榜,2SA112报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications

JMNIC

锦美电子

Silicon PNP Epitaxial

Features Low frequency amplifier

KEXIN

科信电子

Silicon PNP Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SC2618

HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial Transistor

Application\n• Low frequency amplifier\n• Complementary pair with 2SC2618

HITACHIHitachi Semiconductor

日立日立公司

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products.

RENESAS

瑞萨

Silicon PNP Epitaxial

Application\n   Low frequency amplifier

RENESAS

瑞萨

Silicon PNP Epitaxial

Application Low frequency amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial

Features ● Low frequency amplifier

KEXIN

科信电子

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification Complementary to 2SC2631 ■Features ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob. ● Makes up a comp

PANASONIC

松下

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

For low-frequency high breakdown voltage amplification Complementary to 2SA1123 ■Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob .

PANASONIC

松下

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification Complementary to 2SC2632 ■Features ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob. ● Makes up a comp

PANASONIC

松下

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 ■ Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob.

PANASONIC

松下

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications

JMNIC

锦美电子

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SA1127 ■Features •Low noise voltage NV •High forward current transfer ratio hFE

PANASONIC

松下

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 ■Features ● Low noise characteristics. ● High foward current transfer ratio hFE .

PANASONIC

松下

Silicon PNP epitaxial planer type

For low-frequency output amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Optimum for low-voltage operation and for converter circuits.

PANASONIC

松下

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver. FEATURES • Large current capacity with small package: IC(DC)= −7.0 A • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. @IC= −3.0 A, IB = −0.1 A • Complementary transi

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity ·Complement to type 2SC2654 APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC2654 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max)@lc= -3A • Large Current Capability-lc= -7A • Complement to Type 2SC2654 APPLICATIONS • Designed for mid-switchingapplications, and is ideal for use as a ramp driver.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

RENESAS

瑞萨

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity ·Complement to type 2SC2654 APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

ISC

无锡固电

Silicon PNP transistor in a TO-220 Plastic Package.

Descriptions Silicon PNP transistor in a TO-220 Plastic Package. Features Large current capacity with small package, low collector saturation voltage, pair with 2SC2654. Applications For low-frequency power amplifiers and mid-speed switching.

FOSHAN

蓝箭电子

Silicon PNP Power Transistors

文件:151.85 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistor

文件:128.71 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:151.85 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Epitaxial

文件:92.73 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:65.06 Kbytes Page:5 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:92.73 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:147.37 Kbytes Page:6 Pages

RENESAS

瑞萨

PNP Transistors

文件:846.36 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:846.36 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:846.36 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:876.11 Kbytes Page:2 Pages

KEXIN

科信电子

Silicon PNP Epitaxial

文件:147.37 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:92.73 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:65.06 Kbytes Page:5 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:147.37 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:92.73 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:92.73 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:147.37 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:65.06 Kbytes Page:5 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:92.73 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:147.37 Kbytes Page:6 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:164.09 Kbytes Page:5 Pages

RENESAS

瑞萨

PNP Transistors

文件:657.25 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:657.25 Kbytes Page:2 Pages

KEXIN

科信电子

Silicon PNP Epitaxial

文件:164.09 Kbytes Page:5 Pages

RENESAS

瑞萨

Silicon PNP Epitaxial

文件:164.09 Kbytes Page:5 Pages

RENESAS

瑞萨

PNP Transistors

文件:712.09 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:657.25 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:712.09 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:657.25 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:712.09 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:712.09 Kbytes Page:2 Pages

KEXIN

科信电子

封装/外壳:TO-226-3,TO-92-3 长体 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 150V 0.05A TO92L-A1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

2SA112产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    200(Typ)MHz

  • Maximum Power Dissipation:

    400mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    7V

  • Maximum DC Collector Current:

    0.1A

  • Maximum Collector Emitter Voltage:

    55V

  • Maximum Collector Emitter Saturation Voltage:

    0.6@10mA@100mAV

  • Maximum Collector Base Voltage:

    60V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Small Signal

更新时间:2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2026+
TO-220
54648
百分百原装现货 实单必成 欢迎询价
NEC
24+
CAN3
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
RENESAS/瑞萨
25+
TO220
880000
明嘉莱只做原装正品现货
RENESAS
25+23+
TO220
7248
绝对原装正品全新进口深圳现货
24+
30000
RENESAS/瑞萨
22+
TO220
12245
现货,原厂原装假一罚十!
FAIRCHILD
20+
TO-220
195
全新 发货1-2天
RENESAS/瑞萨
24+
TO220
54000
郑重承诺只做原装进口现货
SANYO/三洋
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS
TO220
9850
一级代理 原装正品假一罚十价格优势长期供货

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