Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification Complementary to 2SC2632 ■Features ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob. ● Makes up a comp

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 ■ Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob.

Silicon PNP epitaxial planer type Transistor

For low-frequency high breakdown voltage amplification\nComplementary to 2SC2632■ ● Satisfactory foward current transfer ratio hFE collector current IC characteristics.\n● High collector to emitter voltage VCEO.\n● Small collector output capacitance Cob.\n● Makes up a complementary pair with 2SC2632, which is optimum for the pre-driver stage of a 40 to 60W output amplifier.;

封装/外壳：TO-226-3，TO-92-3 长体 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 150V 0.05A TO92L-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个