PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver. FEATURES • Large current capacity with small package: IC(DC)= −7.0 A • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. @IC= −3.0 A, IB = −0.1 A • Complementary transi

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC2654 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity ·Complement to type 2SC2654 APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity ·Complement to type 2SC2654 APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

Silicon PNP transistor in a TO-220 Plastic Package.

Descriptions Silicon PNP transistor in a TO-220 Plastic Package. Features Large current capacity with small package, low collector saturation voltage, pair with 2SC2654. Applications For low-frequency power amplifiers and mid-speed switching.

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max)@lc= -3A • Large Current Capability-lc= -7A • Complement to Type 2SC2654 APPLICATIONS • Designed for mid-switchingapplications, and is ideal for use as a ramp driver.

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

Transistor-Bipolar Power Transistors

Silicon PNP Power Transistors

文件：186.45 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：186.45 Kbytes Page：3 Pages