300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) *

300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：177.16 Kbytes Page：3 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) *

300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) *

300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：177.16 Kbytes Page：3 Pages

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：178.35 Kbytes Page：3 Pages

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：178.35 Kbytes Page：3 Pages

300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：177.16 Kbytes Page：3 Pages

300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：177.16 Kbytes Page：3 Pages