位置:首页 > IC中文资料 > 2N7002V

2N7002V价格

参考价格:¥0.5307

型号:2N7002V 品牌:Fairchild 备注:这里有2N7002V多少钱,2026年最近7天走势,今日出价,今日竞价,2N7002V批发/采购报价,2N7002V行情走势销售排行榜,2N7002V报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N7002V

N-Channel Enhancement Mode Field Effect Transistor

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant

FAIRCHILD

仙童半导体

2N7002V

N-Channel Enhancement Mode Field Effect Transistor

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free by Design/RoHS Compliant

ONSEMI

安森美半导体

2N7002V

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliabil

DIODES

美台半导体

2N7002V

N-Channel MOSFET

Features • Low gate threshold voltage • Low input capacitance • Low on-resistance • Low input/output leakage • Marking : KAS • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

2N7002V

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.115A RDS(ON)

RECTRON

丽正

2N7002V

N沟道增强模型场效应晶体管

•双N沟道数字MOSFET\n•低导通电阻\n•低栅极阈值电压\n•低输入电容\n•快速开关速度\n•低输入/输出泄漏\n•超小型表面贴装封装\n•无铅设计/符合RoHS标准;

ONSEMI

安森美半导体

2N7002V

MOSFET (N-Channel)

SOT-563 Plastic-Encapsulate MOSFETS FEATURE • Dual N-channel MOSFET • Low on-resistance • Low gate threshold voltage • Low input capacitance • Fast switching speed • Low input/output leakage APPLICATION • Load Switch for Portable Devices • DC/DC Converter

JIANGSU

长电科技

2N7002V

N-Channel MOSFET

文件:426.91 Kbytes Page:3 Pages

MCC

2N7002V

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:87.8 Kbytes Page:3 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliabil

DIODES

美台半导体

N-Channel Enhancement Mode Field Effect Transistor

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free by Design/RoHS Compliant

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant

FAIRCHILD

仙童半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliabil

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

Dual N-Channel Enhancement MOS FET

VOLTAGE 60 Volts CURRENT 0.280 Ampere FEATURE * Small surface mounting type. (SOT-563) * High density cell design for low R DS(ON) * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Serv

CHENMKO

力勤

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:87.8 Kbytes Page:3 Pages

DIODES

美台半导体

N-Channel Enhancement Mode Field Effect Transistor

文件:511.75 Kbytes Page:6 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET

文件:426.91 Kbytes Page:3 Pages

MCC

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:87.8 Kbytes Page:3 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:87.8 Kbytes Page:3 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:87.8 Kbytes Page:3 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:87.8 Kbytes Page:3 Pages

DIODES

美台半导体

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MOSFET 2N-CH 60V 0.28A SOT-563 分立半导体产品 晶体管 - FET,MOSFET - 阵列

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:87.8 Kbytes Page:3 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:144.33 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:130.78 Kbytes Page:3 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:130.78 Kbytes Page:3 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:130.78 Kbytes Page:3 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:144.33 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:144.33 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:130.78 Kbytes Page:3 Pages

DIODES

美台半导体

丝印代码:S72;N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

PANJIT

強茂

丝印代码:702;N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

ZETEX

丝印代码:72***;N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

VISHAYVishay Siliconix

威世威世科技公司

丝印代码:702*;N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

SUTEX

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件:14.46 Kbytes Page:2 Pages

SEME-LAB

2N7002V产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Dual

  • V(BR)DSS Min (V):

    60

  • VGS Max (V):

    ±20

  • VGS(th) Max (V):

    2.5

  • ID Max (A):

    280

  • PD Max (W):

    0.25

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    Q1=Q2=7500

  • RDS(on) Max @ VGS = 10 V(mΩ):

    Q1=Q2=2000

  • Ciss Typ (pF):

    37.8

  • Package Type:

    SOT-563

更新时间:2026-5-20 11:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
26+
NI-880
86720
全新原装正品价格最实惠 假一赔百
DIODES/美台
25+
SOT-563
25000
原装正品公司现货,假一赔十!
DIODES/美台
2023+
SOT563
9000
十五年行业诚信经营,专注全新正品
FSC
19+
SOT-563
200000
DiodesZetex
25+
MOSFET
5864
原装原标原盒 给价就出 全网最低
ONSEMI
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES/美台
2450+
SOT663
8850
只做原装正品假一赔十为客户做到零风险!!
DIODES/美台
24+
SOT-563
6000
全新原装深圳仓库现货有单必成
DIODES
21+
8080
只做原装,质量保证
DIODES/美台
24+
SOT-563
9600
原装现货,优势供应,支持实单!

2N7002V芯片相关品牌

2N7002V数据表相关新闻