丝印代码：LW-；60 V, 0.3 A N-channel Trench MOSFET

丝印代码：LW；60 V, 360 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • AEC

60V N-Channel Mosfet

Application ® Direct logi-fevl interface: TTLICMOS: @ Drivers: relays, solenoids, lamps, hammers display, memories, transistors, tc. ® Battery operated systems ® Soid-site relays

60 V, 360 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

60 V, 0.3 A N-channel Trench MOSFET

丝印代码：M8；60 V, 320 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

丝印代码：M8-；60 V, 320 mA N-channel Trench MOSFET

N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt

□ Feature - Small surface mounting type - High density cell design for low RDS(ON) - Suitable for high packing density - Rugged and reliable - High saturation current capability - Voltage controlled small signal switch □ Application - Servomotor control - Power MOSFET gate drivers - Othe

丝印代码：Z1；Logic-level compatible

丝印代码：Z1；60 V, 310 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  AEC-Q

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Servo

60 V, 310 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

60 V, 350 mA dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Trench MOSFET technology\n• AEC-Q101 qualified;

丝印代码：ZF；60 V, 350 mA N-channel Trench MOSFET

丝印代码：ZF；60 V, 350 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology 3. Ap

丝印代码：72Kc；N-Channel Enhancement Mode MOSFET

Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy

丝印代码：X8；60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology •

丝印代码：X8-；60 V, 0.3 A N-channel Trench MOSFET

N-Channel 60-V (D-S) MOSFET

文件：1.01359 Mbytes Page：8 Pages

丝印代码：S72；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

丝印代码：702*；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

丝印代码：702；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

丝印代码：72***；N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件：14.46 Kbytes Page：2 Pages