位置：首页 > IC中文资料第455页 > 2N7002_Q
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a | PANJIT 強茂 |   | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h | SUTEX | | ||
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * 60 Volt VCEO | Zetex | | ||
N-Channel 60-V (D-S) MOSFET FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used | Fairchild 仙童半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi | DIODES 美台半导体 | | ||
N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) | YANGJIE 扬杰电子 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s | DIODES 美台半导体 | | ||
60 V N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Side wettable flanks for optical | NEXPERIA 安世 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：245.02 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：245.02 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
60 V N-channel Trench MOSFET | NEXPERIA 安世 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：112.82 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：288.82 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：112.82 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：288.82 Kbytes Page：3 Pages | SECOS 喜可士 | |
2N7002_Q产品属性
- 类型
描述
- 型号
2N7002_Q
- 功能描述
MOSFET N-CHANNEL 60V 115mA
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT-23 |
6800 |
原装正品,实单价格申请 |
|||
SILICONIX |
2009 |
SOT23-3 |
178 |
全新原装 正品现货 |
|||
恩XP |
17+ |
SOT23 |
6200 |
100%原装正品现货 |
|||
FAIRCHILD/仙童 |
25+ |
SOT363 |
154708 |
明嘉莱只做原装正品现货 |
|||
PHI |
03+ |
SOT23-3 |
1789 |
原装现货海量库存欢迎咨询 |
|||
CJ |
23+ |
SOT-23 |
60000 |
原装正品,假一罚十 |
|||
恩XP |
SOT-23 |
780 |
原装长期供货! |
||||
MCC |
25+ |
SOT-363-6 |
18000 |
原厂授权一级代理，专注军工、汽车、医疗、工业、新能源、电力！ |
|||
ON/安森美 |
23+ |
SOT23 |
3000 |
原装正品,假一赔十 |
|||
NEXPERIA/安世 |
2511 |
SOT-23 |
50000 |
电子元器件采购降本30%!盈慧通原厂直采,砍掉中间差价 |
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2N7002_Q规格书下载地址
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2N7002_Q数据表相关新闻
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2021-10-192N7002 CJ/长电 SOT-23 支持原装长电订货型号，欢迎咨询！
2N7002 CJ/长电 SOT-23
2021-5-19
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