N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

MOSFET

MOSFET (N-Channel) RoHS Device Features Power dissipation : 0.35W

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

N-Ch Small Signal MOSFET with Gate Protection

FEATURES z 2 kV ESD Protection z Lower On-resistance: 2 Ω z Low Threshold: 2 V (Typ.) z Low Input Capacitance: 25 pF z Fast Switching Performance: 25 nS z Low Input and Output Leakage APPLICATIONS z Direct Logic-Level Interface: TTL/CMOS z Drivers: Relays, Solenoi

60V MOSFET

Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

300 mAmps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage,

300m Amps, 60 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

MOSFET

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N-Channel Enhancement-Mode Vertical DMOS FETs

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N-Channel Enhancement-Mode Vertical DMOS FETs

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MOSFET

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Low Voltage MOSFET

Advanced trench MOSFET process technology

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60V MOSFET

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：191.74 Kbytes Page：4 Pages

60V, 115mA, N-CHANNEL MOSFET

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Dual N Channel MOSFET

300mA, 60V N-CHANNEL POWER MOSFET

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N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

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N Channel MOSFET

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

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300mA, 60V N-CHANNEL POWER MOSFET

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300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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