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位置：首页 > IC中文资料第1332页 > 2N679

2N679晶体管资料

  • 2N679别名：2N679三极管、2N679晶体管、2N679晶体三极管

  • 2N679生产厂家：CSR_美国电子晶体管公司

  • 2N679制作材料：Ge-NPN

  • 2N679性质：低频或音频放大 （LF）_开关管 （S）

  • 2N679封装形式：直插封装

  • 2N679极限工作电压：25V

  • 2N679最大电流允许值：

  • 2N679最大工作频率：3MHZ

  • 2N679引脚数：3

  • 2N679最大耗散功率：0.15W

  • 2N679放大倍数：

  • 2N679图片代号：D-9

  • 2N679vtest：25

  • 2N679htest：3000000

  • 2N679atest：0

  • 2N679wtest：0.15

  • 2N679代换 2N679用什么型号代替：AC127,ASY28,ASY29,ASY73,ASY74,ASY75,2N1302,3BX1D,

2N679价格

参考价格：￥40.4791

型号：2N6790 品牌：International Rectifier 备注：这里有2N679多少钱，2026年最近7天走势，今日出价，今日竞价，2N679批发/采购报价，2N679行情走势销售排行榜，2N679报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N6790

3.5A, 200V, 0.800 Ohm, N-Channel Power

3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transis

FAIRCHILD

仙童半导体

2N6790U

N-CHANNEL MOSFET

DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • JEDEC registered 2N6790U. • JAN, JANTX, and JANTXV qualificat

MICROSEMI

美高森美

2N6793

N-CHANNEL ENHANCEMENT MOSFET

Description: N-Channel Enhancement MOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6794

N-CHANNEL POWER MOSFET

FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS

SEME-LAB

2N6794

N-CHANNEL POWER MOSFET

FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6794LCC4

N?밅HANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • AVALANCHE ENERGY RATING • SIMPLE DRIVE REQUIREMENTS

SEME-LAB

2N6796

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls,

ETCList of Unclassifed Manufacturers

未分类制造商

2N6796

N-CHANNEL POWER MOSFET

Features: • Hermetic Low Profile TO-39 (TO-205AF) Metal Package. • Ideally Suited For Switching, Power Supply, Motor Control and Amplifier Applications. • Screening Options Available.

TTELEC

2N6796

TMOS FET TRANSISTOR N - CHANNEL

FEATURES • VDSS = 100V • ID = 8A • RDSON = 0.18Ω

SEME-LAB

2N6796

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors r

INTERSIL

2N6796

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numer

MICROSEMI

美高森美

2N6796U

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numer

MICROSEMI

美高森美

2N6798

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numer

MICROSEMI

美高森美

2N6798

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls,

ETCList of Unclassifed Manufacturers

未分类制造商

2N6798

N-CHANNEL POWER MOSFET

Features: • Hermetic Low Profile TO-39 (TO-205AF) Metal Package. • Ideally Suited For Switching, Power Supply, Motor Control and Amplifier Applications. • Screening Options Available.

TTELEC

2N6798U

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numer

MICROSEMI

美高森美

2N6790

3.5A, 200V, 0.800 Ohm, N-Channel Power

ONSEMI

安森美半导体

2N6790

N?밅HANNEL POWER MOSFET

文件：45.46 Kbytes Page：2 Pages

SEME-LAB

2N6792

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

文件：15.49 Kbytes Page：1 Pages

SEME-LAB

2N6792

400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package

INFINEON

英飞凌

2N6793

N-CHANNEL ENHANCEMENT MOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6794

N?밅HANNEL ENHANCEMENT MODE POWER MOSFET

文件：57.46 Kbytes Page：2 Pages

SEME-LAB

2N6794_01

N?밅HANNEL ENHANCEMENT MODE POWER MOSFET

文件：57.46 Kbytes Page：2 Pages

SEME-LAB

2N6796

TMOS FET ENHANCEMENT N - CHANNEL

文件：22.28 Kbytes Page：2 Pages

SEME-LAB

2N6796

N-CHANNEL ENHANCEMENT MOSFET

文件：118.88 Kbytes Page：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6796

N-CHANNEL MOSFET

文件：182.77 Kbytes Page：4 Pages

MICROSEMI

美高森美

2N6796_03

TMOS FET ENHANCEMENT N - CHANNEL

文件：22.28 Kbytes Page：2 Pages

SEME-LAB

2N6796_10

N-CHANNEL MOSFET

文件：182.77 Kbytes Page：4 Pages

MICROSEMI

美高森美

2N6796LCC4

N-CHANNEL POWER MOSFET

文件：19.79 Kbytes Page：2 Pages

SEME-LAB

2N6796U

N-CHANNEL MOSFET

文件：182.77 Kbytes Page：4 Pages

MICROSEMI

美高森美

2N6798

N-CHANNEL MOSFET

文件：174.87 Kbytes Page：3 Pages

MICROSEMI

美高森美

2N6798

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

文件：21.19 Kbytes Page：2 Pages

SEME-LAB

2N6798

N-CHANNEL ENHANCEMENT

文件：42.25 Kbytes Page：2 Pages

SEME-LAB

2N6798_10

N-CHANNEL MOSFET

文件：174.87 Kbytes Page：3 Pages

MICROSEMI

美高森美

2N679产品属性

  • 类型

    描述

  • 型号

    2N679

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 200V 3.5A 3-Pin TO-39

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 200V 3.5A 3PIN TO-39 - Bulk

  • 制造商

    International Rectifier

  • 功能描述

    N CH MOSFET, 200V, 3.5A, TO-205AF; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    3.5A; Drain Source Voltage

  • Vds

    200V; On Resistance

  • Rds(on)

    800mohm; Rds(on) Test Voltage

  • Vgs

    10V; Threshold Voltage Vgs

  • Typ

    4V ;RoHS

  • Compliant

    No

2N679供应商更多...

更新时间：2026-5-16 9:48:00
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2N679规格书下载地址

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