N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numer

High-Reliability Transistors

This family of switching transistors is military qualified up to the JANTXV level for high-reliability applications.  The 2N6798U part number is also qualified to the JANS level.  These devices are also available in a TO-205AF (TO-39) package.  Microsemi also offers numerous other transistor product

N-CHANNEL MOSFET

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100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls,

TMOS FET TRANSISTOR N - CHANNEL

FEATURES • VDSS = 100V • ID = 8A • RDSON = 0.18Ω

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors r

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls,

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A)

Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFE