TMOS FET TRANSISTOR N - CHANNEL

FEATURES • VDSS = 100V • ID = 8A • RDSON = 0.18Ω

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors r

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls,

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numer

N-CHANNEL POWER MOSFET

Features: • Hermetic Low Profile TO-39 (TO-205AF) Metal Package. • Ideally Suited For Switching, Power Supply, Motor Control and Amplifier Applications. • Screening Options Available.

N-CHANNEL ENHANCEMENT MOSFET

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TMOS FET ENHANCEMENT N - CHANNEL

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N-CHANNEL MOSFET

文件：182.77 Kbytes Page：4 Pages

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numer

TMOS FET ENHANCEMENT N - CHANNEL

文件：22.28 Kbytes Page：2 Pages

N-CHANNEL MOSFET

文件：182.77 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：19.79 Kbytes Page：2 Pages

N-CHANNEL MOSFET

文件：182.77 Kbytes Page：4 Pages