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2N676晶体管资料
2N676别名:2N676三极管、2N676晶体管、2N676晶体三极管
2N676生产厂家:
2N676制作材料:Ge-PNP
2N676性质:
2N676封装形式:
2N676极限工作电压:80V
2N676最大电流允许值:7A
2N676最大工作频率:<1MHZ或未知
2N676引脚数:
2N676最大耗散功率:
2N676放大倍数:β>1000
2N676图片代号:NO
2N676vtest:80
2N676htest:999900
- 2N676atest:7
2N676wtest:0
2N676代换 2N676用什么型号代替:
2N676价格
参考价格:¥121.3206
型号:2N6764JANTX 品牌:International Rectifier 备注:这里有2N676多少钱,2025年最近7天走势,今日出价,今日竞价,2N676批发/采购报价,2N676行情走势销售排行榜,2N676报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Power MOSFETs, 5.5A, 350V/400V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. | Fairchild 仙童半导体 | |||
N-CHANNEL MOSFET N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 | Microsemi 美高森美 | |||
N-CHANNEL MOSFET N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 | Microsemi 美高森美 | |||
VGS Rated at 짹20V DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy | ISC 无锡固电 | |||
N-CHANNEL MOSFET N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 | Microsemi 美高森美 | |||
N-Channel Power MOSFETs, 4.5A, 450V/500V
| Fairchild 仙童半导体 | |||
VGS Rated at 짹20V DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy | ISC 无锡固电 | |||
VGS Rated at 짹20V DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy | ISC 无锡固电 | |||
N-Channel Power MOSFETs, 4.5A, 450V/500V
| Fairchild 仙童半导体 | |||
N-CHANNEL MOSFET N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 | Microsemi 美高森美 | |||
N-Channel Power MOSFETs, 38A, 60V/100V
| Fairchild 仙童半导体 | |||
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors The 2N6763 and2N6764 are n-channelenhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay driver;:, and drivers for high-power bipolar switching transistors requiring high speed and low gate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
VGS Rated at 짹20V DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high | ISC 无锡固电 | |||
N-CHANNEL ENHANCEMENT-MODE The 2N6763 and2N6764 are n-channelenhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay driver;:, and drivers for high-power bipolar switching transistors requiring high speed and low gate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors The 2N6763 and2N6764 are n-channelenhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay driver;:, and drivers for high-power bipolar switching transistors requiring high speed and low gate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Power MOSFETs, 38A, 60V/100V
| Fairchild 仙童半导体 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
VGS Rated at 짹20V DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high ener | ISC 无锡固电 | |||
N-Channel Power MOSFETs 30 A,150 V/200 V N-Channel Power MOSFETs, 30 A, 150 V/200 V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Power MOSFETs, 30A, 150V/200V N-Channel Power MOSFETs, 30A, 150V/200V Power And Discrete Division | Fairchild 仙童半导体 | |||
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert | IXYS 艾赛斯 | |||
N-Channel Power MOSFETs, 30A, 150V/200V N-Channel Power MOSFETs, 30A, 150V/200V Power And Discrete Division | Fairchild 仙童半导体 | |||
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert | IXYS 艾赛斯 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N–CHANNEL POWER MOSFET FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE | SEME-LAB | |||
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-Channel Power MOSFETs, 15A, 350V/400V
| Fairchild 仙童半导体 | |||
N-CHANNEL ENHANCEMENT-MODE
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-CHANNEL ENHANCEMENT-MODE
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Power MOSFETs, 15A, 350V/400V
| Fairchild 仙童半导体 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-CHANNEL MOSFET DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to | Microsemi 美高森美 | |||
N-Channel Power MOSFETs, Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ±20 V • Silicon Gate for Fast Switching Spe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
VGS Rated at 짹20V DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) , specified at elevated temperature • Low drive requirements APPLICATIONS designed for high voltage ,high speed application ,such as off-line switching power applies,UPS,AC and DC motor controls , re | ISC 无锡固电 | |||
N-Channel Power MOSFETs, 12A, 450V/500V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ±20 V • Silicon Gate for Fast Switching Spe | Fairchild 仙童半导体 | |||
N-CHANNEL POWER MOSFET 文件:96.83 Kbytes Page:3 Pages | SEME-LAB | |||
N-Channel Power MOSFETs, 4.5A, 450V/500V | ONSEMI 安森美半导体 | |||
High-Reliability Transistors | Microchip 微芯科技 | |||
N-CHANNEL MOSFET 文件:177.14 Kbytes Page:3 Pages | Microsemi 美高森美 | |||
N-CHANNEL MOSFET 文件:177.14 Kbytes Page:3 Pages | Microsemi 美高森美 | |||
N-Channel Power MOSFETs, 38A, 60V/100V | ONSEMI 安森美半导体 | |||
VGS Rated at 짹20V 文件:47.2 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-CHANNEL MOSFET 文件:257.01 Kbytes Page:5 Pages | Microsemi 美高森美 | |||
N-CHANNEL MOSFET 文件:244.82 Kbytes Page:5 Pages | Microsemi 美高森美 | |||
N-CHANNEL MOSFET 文件:257.01 Kbytes Page:5 Pages | Microsemi 美高森美 | |||
N-CHANNEL MOSFET 文件:244.82 Kbytes Page:5 Pages | Microsemi 美高森美 | |||
VGS Rated at 짹20V 文件:47.28 Kbytes Page:2 Pages | ISC 无锡固电 | |||
VGS Rated at 짹20V 文件:47.27 Kbytes Page:2 Pages | ISC 无锡固电 | |||
VGS Rated at 짹20V 文件:47.2 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-CHANNEL MOSFET 文件:244.82 Kbytes Page:5 Pages | Microsemi 美高森美 | |||
N-CHANNEL POWER MOSFET 文件:43.18 Kbytes Page:2 Pages | SEME-LAB | |||
N-CHANNEL MOSFET 文件:257.01 Kbytes Page:5 Pages | Microsemi 美高森美 | |||
N-CHANNEL MOSFET 文件:257.01 Kbytes Page:5 Pages | Microsemi 美高森美 |
2N676产品属性
- 类型
描述
- 型号
2N676
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA
- 制造商
International Rectifier
- 功能描述
TRANS MOSFET N-CH 400V 5.5A 2PIN TO-204AA - Bulk
- 制造商
Microsemi Corporation
- 功能描述
N CHANNEL MOSFET - Bulk
- 制造商
Rochester Electronics LLC
- 功能描述
HEXFET, HI-REL - Bulk
- 制造商
International Rectifier
- 功能描述
N CH MOSFET, 400V, 5.5A, TO-204AA; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
5.5A; Drain Source Voltage
- Vds
400V; On Resistance
- Rds(on)
1ohm; Rds(on) Test Voltage
- Vgs
10V; Threshold Voltage Vgs
- Typ
4V; No. of
- Pins
2 ;RoHS
- Compliant
No
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/MOT |
专业铁帽 |
TO-3 |
850 |
原装铁帽专营,代理渠道量大可订货 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
ON |
24+ |
TO-3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
23+ |
NA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
IR |
三年内 |
1983 |
只做原装正品 |
||||
ON |
23+ |
TO-3 |
10 |
正规渠道,只有原装! |
|||
IR |
2447 |
TO-3 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TI |
QFN56 |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
||||
IR |
23+ |
TO-3 |
8000 |
只做原装现货 |
|||
2N6769 |
25+ |
18 |
18 |
2N676规格书下载地址
2N676参数引脚图相关
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- 2N679
- 2N678C
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- 2N678A
- 2N6786
- 2N6784U
- 2N6784
- 2N6782U
- 2N6782
- 2N6781
- 2N678
- 2N677C
- 2N677B
- 2N677A
- 2N6776
- 2N6775
- 2N6774
- 2N6773
- 2N6772
- 2N6771
- 2N6770
- 2N677
- 2N6769
- 2N6768
- 2N6767
- 2N6766
- 2N6765
- 2N6764
- 2N6763
- 2N6762
- 2N6761
- 2N6760
- 2N6759
- 2N6758
- 2N6757
- 2N6756
- 2N6755
- 2N6754
- 2N6753
- 2N6752
- 2N6751
- 2N675
- 2N6743
- 2N6742
- 2N6740
- 2N674
- 2N6739
- 2N6738
- 2N6737
- 2N6736
- 2N6735
- 2N6734
- 2N6733
- 2N6732
- 2N6731
- 2N6730
- 2N673
- 2N6729
2N676数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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