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2N676晶体管资料
2N676别名:2N676三极管、2N676晶体管、2N676晶体三极管
2N676生产厂家:
2N676制作材料:Ge-PNP
2N676性质:
2N676封装形式:
2N676极限工作电压:80V
2N676最大电流允许值:7A
2N676最大工作频率:<1MHZ或未知
2N676引脚数:
2N676最大耗散功率:
2N676放大倍数:β>1000
2N676图片代号:NO
2N676vtest:80
2N676htest:999900
- 2N676atest:7
2N676wtest:0
2N676代换 2N676用什么型号代替:
2N676价格
参考价格:¥121.3206
型号:2N6764JANTX 品牌:International Rectifier 备注:这里有2N676多少钱,2024年最近7天走势,今日出价,今日竞价,2N676批发/采购报价,2N676行情走势销售排行榜,2N676报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELMOSFET N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
VGSRatedat짹20V DESCRIPTION •VGSRatedat±20V •SiliconGateforfastswitchingspeeds •IDSS、RDS(ON),specifiedatelevatedtemperature •Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELMOSFET N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-ChannelPowerMOSFETs,4.5A,450V/500V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
VGSRatedat짹20V DESCRIPTION •VGSRatedat±20V •SiliconGateforfastswitchingspeeds •IDSS、RDS(ON),specifiedatelevatedtemperature •Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
VGSRatedat짹20V DESCRIPTION •VGSRatedat±20V •SiliconGateforfastswitchingspeeds •IDSS、RDS(ON),specifiedatelevatedtemperature •Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelPowerMOSFETs,4.5A,450V/500V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELMOSFET N-CHANNELMOSFETQualifiedperMIL-PRF-19500/542 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-ChannelPowerMOSFETs,38A,60V/100V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelEnhancement-ModePowerMOSField-EffectTransistors The2N6763and2N6764aren-channelenhancement-modesilicon-gatepowerMOSfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriver;:,anddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
VGSRatedat짹20V DESCRIPTION •VGSRatedat±20V •SiliconGateforfastswitchingspeeds •IDSS、RDS(ON),specifiedatelevatedtemperature •Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchas switchingapplies,UPS,ACandDCmotorcontrols, relayandhigh | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELENHANCEMENT-MODE The2N6763and2N6764aren-channelenhancement-modesilicon-gatepowerMOSfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriver;:,anddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-ChannelEnhancement-ModePowerMOSField-EffectTransistors The2N6763and2N6764aren-channelenhancement-modesilicon-gatepowerMOSfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriver;:,anddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-ChannelPowerMOSFETs,38A,60V/100V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/543 DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
VGSRatedat짹20V DESCRIPTION •VGSRatedat±20V •SiliconGateforfastswitchingspeeds •IDSS、RDS(ON),specifiedatelevatedtemperature •Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighener | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelPowerMOSFETs30A,150V/200V N-ChannelPowerMOSFETs,30A,150V/200V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-ChannelPowerMOSFETs,30A,150V/200V N-ChannelPowerMOSFETs,30A,150V/200V PowerAndDiscreteDivision | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert | IXYS IXYS Integrated Circuits Division | |||
N-ChannelPowerMOSFETs,30A,150V/200V N-ChannelPowerMOSFETs,30A,150V/200V PowerAndDiscreteDivision | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert | IXYS IXYS Integrated Circuits Division | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/543 DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELENHANCEMENT-MODE
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-ChannelPowerMOSFETs,15A,350V/400V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelPowerMOSFETs,15A,350V/400V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELENHANCEMENT-MODE
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/543 DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-ChannelPowerMOSFETs,12A,450V/500V Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchingSpe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelPowerMOSFETs, Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchingSpe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
VGSRatedat짹20V DESCRIPTION •VGSRatedat±20V •SiliconGateforfastswitchingspeeds •IDSS、RDS(ON),specifiedatelevatedtemperature •Lowdriverequirements APPLICATIONS designedforhighvoltage,highspeedapplication,suchasoff-lineswitchingpowerapplies,UPS,ACandDCmotorcontrols,re | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELPOWERMOSFET 文件:96.83 Kbytes Page:3 Pages | SEME-LAB Seme LAB | |||
N-CHANNELMOSFET 文件:177.14 Kbytes Page:3 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET 文件:177.14 Kbytes Page:3 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
VGSRatedat짹20V 文件:47.2 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELMOSFET 文件:257.01 Kbytes Page:5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET 文件:244.82 Kbytes Page:5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET 文件:257.01 Kbytes Page:5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET 文件:244.82 Kbytes Page:5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
VGSRatedat짹20V 文件:47.28 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
VGSRatedat짹20V 文件:47.27 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
VGSRatedat짹20V 文件:47.2 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELMOSFET 文件:244.82 Kbytes Page:5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELPOWERMOSFET 文件:43.18 Kbytes Page:2 Pages | SEME-LAB Seme LAB | |||
N-CHANNELMOSFET 文件:257.01 Kbytes Page:5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
N-CHANNELMOSFET 文件:257.01 Kbytes Page:5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |
2N676产品属性
- 类型
描述
- 型号
2N676
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA
- 制造商
International Rectifier
- 功能描述
TRANS MOSFET N-CH 400V 5.5A 2PIN TO-204AA - Bulk
- 制造商
Microsemi Corporation
- 功能描述
N CHANNEL MOSFET - Bulk
- 制造商
Rochester Electronics LLC
- 功能描述
HEXFET, HI-REL - Bulk
- 制造商
International Rectifier
- 功能描述
N CH MOSFET, 400V, 5.5A, TO-204AA; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
5.5A; Drain Source Voltage
- Vds
400V; On Resistance
- Rds(on)
1ohm; Rds(on) Test Voltage
- Vgs
10V; Threshold Voltage Vgs
- Typ
4V; No. of
- Pins
2 ;RoHS
- Compliant
No
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR/International Rectifier/国 |
21+ |
TO-03 |
31 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
21+ |
TO-03 |
31 |
原装现货假一赔十 |
|||
ON |
2023+ |
TO-3 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
22+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
||||
IR |
23+ |
TO-03 |
66800 |
现货正品专供军研究院 |
|||
ON |
22+ |
TO-3 |
10 |
正规渠道,只有原装! |
|||
MOT |
TO-3 |
10000 |
|||||
IR/MOT |
专业铁帽 |
TO-3 |
850 |
原装铁帽专营,代理渠道量大可订货 |
|||
MOT |
2020+ |
TO-3 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
2N6769 |
18 |
18 |
2N676规格书下载地址
2N676参数引脚图相关
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- 2N6776
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- 2N6736
- 2N6735
- 2N6734
- 2N6733
- 2N6732
- 2N6731
- 2N6730
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2N676数据表相关新闻
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2019-2-18
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