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型号 功能描述 生产厂家 企业 LOGO 操作
2N6762

N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542

MICROSEMI

美高森美

2N6762

N-Channel Power MOSFETs, 4.5A, 450V/500V

FAIRCHILD

仙童半导体

2N6762

VGS Rated at 짹20V

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy

ISC

无锡固电

2N6762

High-Reliability Transistors

This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both t

MICROCHIP

微芯科技

2N6762

N-CHANNEL MOSFET

文件:177.14 Kbytes Page:3 Pages

MICROSEMI

美高森美

N-CHANNEL MOSFET

文件:177.14 Kbytes Page:3 Pages

MICROSEMI

美高森美

POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=4.5A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

IRF

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

IRF

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

IRF

POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=4.5A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

IRF

2N6762产品属性

  • 类型

    描述

  • 型号

    2N6762

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 500V 4.5A 3PIN TO-204AA - Bulk

  • 制造商

    Microsemi Corporation

  • 功能描述

    N CHANNEL MOSFET - Bulk

  • 制造商

    International Rectifier

  • 功能描述

    N CH MOSFET, 500V, 4.5A, TO-204AA; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    4.5A; Drain Source Voltage

  • Vds

    500V; On Resistance

  • Rds(on)

    1.5ohm; Rds(on) Test Voltage

  • Vgs

    10V; Threshold Voltage Vgs

  • Typ

    4V ;RoHS

  • Compliant

    No

更新时间:2026-5-16 9:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR/MOT
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
IR
23+
TO-3
7000
25+
长期备有现货
500000
行业低价,代理渠道
IR
24+
TO-3
22055
郑重承诺只做原装进口现货
IR/MOT
24+
TO-3
850
原装现货假一罚十
IR
24+
TO-03
200
进口原装正品优势供应
IR
25+
5
公司优势库存 热卖中!
原厂
2540+
TO-03
6852
只做原装正品假一赔十为客户做到零风险!!
IR
24+
SMD
50
“芯达集团”专营军工百分之百原装进口
IR
QQ咨询
TO-03
84
全新原装 研究所指定供货商

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