N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

N-Channel Power MOSFETs, 38A, 60V/100V

VGS Rated at 짹20V

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ，specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high

N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

The 2N6763 and2N6764 are n-channelenhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay driver;:, and drivers for high-power bipolar switching transistors requiring high speed and low gate

N-CHANNEL ENHANCEMENT-MODE

The 2N6763 and2N6764 are n-channelenhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay driver;:, and drivers for high-power bipolar switching transistors requiring high speed and low gate

N-Channel Power MOSFETs, 38 A, 60 V/100 V

N-CHANNEL MOSFET

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N-CHANNEL MOSFET

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N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

High-Reliability Transistors

This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in a thru hole TO-204AE metal can package.  Microsemi also offers numerous other transistor products to me

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio