2N675晶体管资料
2N675别名：2N675三极管、2N675晶体管、2N675晶体三极管
2N675生产厂家：美国空间功率电子学公司_SSI
2N675制作材料：Ge-PNP
2N675性质：低频或音频放大 （LF）_开关管 （S）_CHOPPER
2N675封装形式：特殊封装
2N675极限工作电压：75V
2N675最大电流允许值：2A
2N675最大工作频率：<1MHZ或未知
2N675引脚数：3
2N675最大耗散功率：1W
2N675放大倍数：
2N675图片代号：F-39
2N675vtest：75
2N675htest：999900
- 2N675atest：2
2N675wtest：1
2N675代换 2N675用什么型号代替：3AD51C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • Low saturation voltage • Fast switching speed APPLICATIONS • Off-line power supplies • High-voltage inverters • Switching regulators | ISC 无锡固电 |   | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400(Min.) • High Switching Speed • Low Collector Saturation Voltage • Wide Area of Safe Operation APPLICATIONS • Off-line power supplies • High-voltage inverters • Switching regulators | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • Low saturation voltage • Fast switching speed APPLICATIONS • Off-line power supplies • High-voltage inverters • Switching regulators | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • Low saturation voltage • Fast switching speed APPLICATIONS • Off-line power supplies • High-voltage inverters • Switching regulators | SAVANTIC | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 450(Min.) • High Switching Speed • Low Collector Saturation Voltage • Wide Area of Safe Operation APPLICATIONS • Off-line power supplies • High-voltage inverters • Switching regulators | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • Low saturation voltage • Fast switching speed APPLICATIONS • Off-line power supplies • High-voltage inverters • Switching regulators | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators | ISC 无锡固电 | | ||
N-Channel Power MOSFETs, 14 A, 60 A/100 V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. | FAIRCHILD 仙童半导体 | | ||
HEXFET TRANSISTORS HEXFET TRANSISTORS JEDEC REGISTERED N-CHANNEL POWER MOSFETs 100 Volts, 0.18 Ohm HEXFET | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HEXFET TRANSISTORS HEXFET TRANSISTORS JEDEC REGISTERED N-CHANNEL POWER MOSFETs 100 Volts, 0.18 Ohm HEXFET | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-CHANNEL MOSFET N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 | MICROSEMI 美高森美 | | ||
VGS Rated at 짹20V DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy | ISC 无锡固电 | | ||
N-Channel Power MOSFETs, 14 A, 60 A/100 V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. | FAIRCHILD 仙童半导体 | | ||
N-Channel Power MOSFETs, 9A, 150V/200V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. | FAIRCHILD 仙童半导体 | | ||
N-CHANNEL MOSFET N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 | MICROSEMI 美高森美 | | ||
N-Channel Power MOSFETs, 9A, 150V/200V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. | FAIRCHILD 仙童半导体 | | ||
VGS Rated at 짹20V DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy | ISC 无锡固电 | | ||
N-Channel Power MOSFETs, 5.5A, 350V/400V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. | FAIRCHILD 仙童半导体 | | ||
Silicon NPN Power Transistors 文件：112.8 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device 文件：12.14 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件：11.29 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：112.8 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：113.13 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistor 文件：76.22 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Trans GP BJT NPN 500V 10A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar NPN Device 文件：11.29 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device 文件：11.29 Kbytes Page：1 Pages | SEME-LAB | | ||
Trans GP BJT NPN 500V 10A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：113.13 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistor 文件：77.95 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
VGS Rated at 짹20V 文件：47.2 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Power MOSFETs, 14 A, 60 A/100 V | ONSEMI 安森美半导体 | | ||
VGS Rated at 짹20V 文件：47.21 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
VGS Rated at 짹20V 文件：47.2 Kbytes Page：2 Pages | ISC 无锡固电 | |
2N675产品属性
- 类型
描述
- Maximum Transition Frequency：
15(Typ)MHz
- Maximum Power Dissipation：
75000mW
- Maximum DC Collector Current：
10A
- Maximum Collector Emitter Voltage：
450V
- Configuration：
Single
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2430+ |
TO-3 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR/MOT |
24+ |
TO-3 |
518 |
||||
IR |
24+ |
SMD |
390 |
“芯达集团”专营军工百分之百原装进口 |
|||
IR |
QQ咨询 |
TO-03 |
67 |
全新原装 研究所指定供货商 |
|||
IR |
25+ |
19 |
公司优势库存 热卖中! |
||||
Microsemi Corporation |
22+ |
TO204AA TO3 |
9000 |
原厂渠道,现货配单 |
|||
IR |
22+ |
TO-3 |
20000 |
公司只有原装 品质保证 |
|||
IR |
三年内 |
1983 |
只做原装正品 |
||||
INFINEON/英飞凌 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
NA |
7000 |
2N675规格书下载地址
2N675参数引脚图相关
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2019-2-18
DdatasheetPDF页码索引
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