N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542

HEXFET TRANSISTORS

HEXFET TRANSISTORS JEDEC REGISTERED N-CHANNEL POWER MOSFETs 100 Volts, 0.18 Ohm HEXFET

VGS Rated at 짹20V

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for fast switching speeds • IDSS 、RDS(ON) ,specified at elevated temperature • Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy

Single channel high reliability power MOSFETs

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N-Channel Power MOSFETs, 14 A, 60 A/100 V

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

High-Reliability Transistors

This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are qualified for high-reliability applications.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount pa

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior