封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：管件 描述：TRANS NPN 350V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HighVoltageTransistors

HighVoltageTransistors NPNandPNP Features •VoltageandCurrentareNegativeforPNPTransistors •Pb−FreePackageisAvailable*

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *350VoltVCEO *Gainof15atIC=100mA

NPNEPITAXIALSILICONTRANSISTOR

HIGHVOLTAGETRANSISTOR •Collector-EmitterVoltage:VCEO=350V •CollectorDissipation:Pc(max)=625mW

NPNEpitaxialSiliconTransistor

Features •HighVoltageTransistor •CollectorDissipation:PC(max)=625mW •Complementto2N6520 •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)

HighVoltageTransistor625mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •ThroughHolePackage •150°CJunctionTemperature •VoltageandCurrentarenegativeforPNPtrans