isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and de

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C) = 5 A to 9.9 A

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

Silicon NPN Power Transistors

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Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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