NPN EPITAXIAL PLANAR TRANSISTOR

Description Darlington Transistor

NPN EPITAXIAL PLANAR TRANSISTOR

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • General purpose • High gain amplification.

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC(max) = 625mW

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.