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2N64晶体管资料
2N64别名:2N64三极管、2N64晶体管、2N64晶体三极管
2N64生产厂家:CSR_美国电子晶体管公司
2N64制作材料:Ge-PNP
2N64性质:低频或音频放大 (LF)
2N64封装形式:直插封装
2N64极限工作电压:25V
2N64最大电流允许值:0.02A
2N64最大工作频率:<1MHZ或未知
2N64引脚数:3
2N64最大耗散功率:0.1W
2N64放大倍数:
2N64图片代号:D-161
2N64vtest:25
2N64htest:999900
- 2N64atest:0.02
2N64wtest:0.1
2N64代换 2N64用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX51C,
2N64价格
参考价格:¥0.0000
型号:2N64 品牌:Semiconductors 备注:这里有2N64多少钱,2025年最近7天走势,今日出价,今日竞价,2N64批发/采购报价,2N64行情走势销售排行榜,2N64报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SiliconControlledRectifiersReverseBlockingThyristors SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SCRs16AMPERESRMS50thru800VOLTS SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiers SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiersReverseBlockingThyristors SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
COMPLEMENTARYMEDIUM-POWERHIGHVOLTAGEPOWERTRANSISTORS
| bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
POWERTRANSISTORS(35W)
| MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SPRINGFIELD,NEWJERSEY07081 SiliconNPN,PNPPowerTransostors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-66package •Continuouscollectorcurrent-IC=-1A •Powerdissipation-PD=35W@TC=25℃ •Complementtotype2N3583 APPLICATIONS •Highspeedswitchingandlinearamplifier •High-voltageoperationalamplifiers •Switchingregulators,converters •Deflectionstagesand | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-66package •Continuouscollectorcurrent-IC=-1A •Powerdissipation-PD=35W@TC=25℃ •Complementtotype2N3583 APPLICATIONS •Highspeedswitchingandlinearamplifier •High-voltageoperationalamplifiers •Switchingregulators,converters •Deflectionstagesand | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •ContunuousCollectorCurrent-IC=-1A •PowerDissipation-PC=35W@TC=25℃ •Collector-EmitterSaturationVoltage-:VCE(sat)=-5.0V(Max)@IC=-1A APPLICATIONS •Designedforhigh-speedswitchingandlinearamplifierapplicationforhigh-voltageoperationalamplifiers,switchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SIPNPPOWERBJT SiliconNPN,PNPPowerTransostors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SPRINGFIELD,NEWJERSEY07081 SiliconNPN,PNPPowerTransostors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
POWERTRANSISTORS(35W)
| MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
COMPLEMENTARYMEDIUM-POWERHIGHVOLTAGEPOWERTRANSISTORS
| bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
COMPLEMENTARYMEDIUM-POWERHIGHVOLTAGEPOWERTRANSISTORS
| bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
POWERTRANSISTORS(35W)
| MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
SPRINGFIELD,NEWJERSEY07081 SiliconNPN,PNPPowerTransostors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
POWERTRANSISTORS(35W)
| MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
COMPLEMENTARYMEDIUM-POWERHIGHVOLTAGEPOWERTRANSISTORS
| bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SPRINGFIELD,NEWJERSEY07081 SILICONNPN/PNPPOWERTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SPRINGFIELD,NEWJERSEY07081 SILICONNPN/PNPPOWERTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
DarlingtonTransistors(NPNSilicon) DarlingtonTransistors NPNSilicon Features •Pb−FreePackagesareAvailable** •DeviceMarking:DeviceType,e.g.,2N6426,DateCode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNDarlingtonTransistor Thisdeviceisdesignedforapplicationsrequiringextremelyhighcurrentgainatcurrentsto1.0A.Sourcedfrom Process05.SeeMPSA14forcharacteristics. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNEPITAXIALSILICONDARLINGTONTRANSISTOR DARLINGTONTRANSISTOR •Collector-EmitterVoltage:VCEO=40V •CollectorDissipation:PC(max)=625mW | SamsungSamsung semiconductor 三星三星半导体 | |||
NPNDarlingtonTransistor NPNDarlingtonTransistor Thisdeviceisdesignedforapplicationsrequiringextremely highcurrentgainatcollectorcurrentsto1.0A.Sourcedfrom Process05.SeeMPSA14forcharacteristics. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNDarlingtontransistor | ETC 知名厂家 | ETC | ||
DarlingtonTransistors(NPNSilicon) DarlingtonTransistors NPNSilicon Features •Pb−FreePackagesareAvailable** •DeviceMarking:DeviceType,e.g.,2N6426,DateCode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNEPITAXIALSILICONTRANSISTOR
| SamsungSamsung semiconductor 三星三星半导体 | |||
NPNEPITAXIALSILICONTRANSISTOR
| SamsungSamsung semiconductor 三星三星半导体 | |||
NPNEpitaxialSiliconTransistor AmplifierTransistor •Collector-EmitterVoltage:VCEO=50V •CollectorDissipation:PC(max)=625mW | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
COMPLEMENTARTSILICONTRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTOR2N6430seriestypesarehermeticallysealdcomplementarysmallsignaltransistorsmanufacturedbytheepitaxialplanarprocessdesignedforhighvoltageamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNSILICONTRANSISTORS GeneralPurposeTransistors. | CDIL Continental Device India Limited | |||
COMPLEMENTARYSILICONTRANSISTOR COMPLEMENTARYSILICONTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONTRANSISTOR COMPLEMENTARYSILICONTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPNSILICONTRANSISTORS GeneralPurposeTransistors. | CDIL Continental Device India Limited | |||
SMALLSIGNALTRANSISTORS COMPLEMENTARYSILICONTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONTRANSISTOR COMPLEMENTARYSILICONTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONTRANSISTOR COMPLEMENTARYSILICONTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
HIGH-POWERPNPSILICONTRANSISTORS HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80©lc=10A=12(Min)®lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto2N | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
HIGH-POWERPNPSILICONTRANSISTORS HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80©lc=10A=12(Min)®lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
HIGHPOWERPNPSILICONTRANSISTORS DESCRIPTION DesignedforuseinIndustrial-MilitaryPowerAmplifierandSwitchingCircuitApplications | SEME-LAB Seme LAB | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications | SAVANTIC Savantic, Inc. | |||
POWERTRANSISTORS(25A,200W) HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGain hFE=20-80©lc=10A =12(Min)®lc=25A *LowCollector-EmitterSaturationVoltage VCB(sat)=1.0V(Max.)@lc=10A,IB | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
POWERTRANSISTORS(25A,200W) HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGain hFE=20-80©lc=10A =12(Min)®lc=25A *LowCollector-EmitterSaturationVoltage VCB(sat)=1.0V(Max.)@lc=10A,IB | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
POWERTRANSISTORSPNPSILICON High-PowerPNPSiliconTransistors ...designedforuseinindustrial–militarypoweramplifierandswitchingcircuitapplications. •HighCollector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)—2N6437=120Vdc(Min)—2N6438 •HighDCCurrentGain—hFE=20–80@IC=10Adc=12( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HIGH-POWERPNPSILICONTRANSISTORS HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80©lc=10A=12(Min)®lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HIGHPOWERPNPSILICONTRANSISTORS DESCRIPTION DesignedforuseinIndustrial-MilitaryPowerAmplifierandSwitchingCircuitApplications | SEME-LAB Seme LAB | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications | SAVANTIC Savantic, Inc. |
2N64产品属性
- 类型
描述
- 型号
2N64
- 功能描述
SCR 50V 16A
- RoHS
否
- 制造商
STMicroelectronics 最大转折电流
- IBO
480 A 额定重复关闭状态电压
- VDRM
600 V
- 关闭状态漏泄电流(在VDRM_IDRM下)
5 uA
- 开启状态
RMS
- 正向电压下降
1.6 V
- 栅触发电压(Vgt)
1.3 V
- 最大栅极峰值反向电压
5 V
- 栅触发电流(Igt)
35 mA 保持电流(Ih
- 最大值)
75 mA
- 安装风格
Through Hole
- 封装/箱体
TO-220
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
TO-3 |
50000 |
全新原装正品现货,支持订货 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MOTOROLA/摩托罗拉 |
23+ |
TO-3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
M/A-COM |
24+ |
SMD |
3000 |
M/A-COM专营微波射频全新原装正品 |
|||
MOTO |
24+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
|||
MOTOROLA |
24+ |
TO-3 |
1200 |
原装现货假一罚十 |
|||
ON/安森美 |
24+ |
NA/ |
3261 |
原装现货,当天可交货,原型号开票 |
|||
ON |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
MICROSEMI |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
CDMA |
24+ |
TO-3 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
2N64规格书下载地址
2N64参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N6425A
- 2N6425
- 2N6424
- 2N6423
- 2N6422
- 2N6421
- 2N6420
- 2N6417
- 2N6416
- 2N6415
- 2N6414
- 2N6413
- 2N6412
- 2N6411
- 2N6410
- 2N641
- 2N6409
- 2N6408
- 2N6407
- 2N6406
- 2N6405G
- 2N6405
- 2N6404G
- 2N6404
- 2N6403G
- 2N6403
- 2N6402G
- 2N6402
- 2N6401G
- 2N6401
- 2N6400G
- 2N6400
- 2N640
- 2N6399G
- 2N6399
- 2N6398
- 2N6397T
- 2N6397G
- 2N6397
- 2N6396
- 2N6395G
- 2N6395
- 2N6394G
- 2N6394
- 2N6393
- 2N6392
- 2N6391
- 2N6390
- 2N639(B)
- 2N639(A)
- 2N639
- 2N6389
- 2N6388G
- 2N6388
- 2N6387G
- 2N6387
- 2N6386
- 2N6385
- 2N6384
- 2N6383
- 2N637B
2N64数据表相关新闻
2N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N7002 MOSFET N-CHANNEL
2N7002MOSFETN-CHANNEL60V115mA
2023-2-232N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N7000L-TO92B-TG
2N7000L-TO92B-TG
2023-1-302N6043G
原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
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