Silicon Controlled Rectifiers Reverse Blocking Thyristors

SCRs 16 AMPERES RMS 50 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions with Center

Silicon Controlled Rectifiers Reverse Blocking Thyristors

SCRs 16 AMPERES RMS 50 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions with Center

Silicon Controlled Rectifiers Reverse Blocking Thyristors

SCRs 16 AMPERES RMS 50 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions with Center

SCRs 16 AMPERES RMS 50 thru 800 VOLTS

SCRs 16 AMPERES RMS 50 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions with Center

Silicon Controlled Rectifiers Reverse Blocking Thyristors

SCRs 16 AMPERES RMS 50 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions with Center

Silicon Controlled Rectifiers Reverse Blocking Thyristors

SCRs 16 AMPERES RMS 50 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions with Center

Silicon Controlled Rectifiers

SCRs 16 AMPERES RMS 50 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions with Center

Silicon Controlled Rectifiers Reverse Blocking Thyristors

SCRs 16 AMPERES RMS 50 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions with Center

COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

Power Transistors

Power Transistors TO-66 Case

POWER TRANSISTORS(35W)

isc Silicon PNP Power Transistor

DESCRIPTION • Contunuous Collector Current-IC= -1A • Power Dissipation-PC= 35W @TC= 25℃ • Collector-Emitter Saturation Voltage- : VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS • Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switchi

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=-1A • Power dissipation -PD=35W @TC=25℃ • Complement to type 2N3583 APPLICATIONS • High speed switching and linear amplifier • High-voltage operational amplifiers • Switching regulators ,converters • Deflection stages and

SPRINGFIELD, NEW JERSEY 07081

Silicon NPN, PNP Power Transostors

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=-1A • Power dissipation -PD=35W @TC=25℃ • Complement to type 2N3583 APPLICATIONS • High speed switching and linear amplifier • High-voltage operational amplifiers • Switching regulators ,converters • Deflection stages and

SI PNP POWER BJT

Silicon NPN, PNP Power Transostors

SPRINGFIELD, NEW JERSEY 07081

Silicon NPN, PNP Power Transostors

POWER TRANSISTORS(35W)

COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

Power Transistors

Power Transistors TO-66 Case

COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

POWER TRANSISTORS(35W)

Power Transistors

Power Transistors TO-66 Case

SPRINGFIELD, NEW JERSEY 07081

Silicon NPN, PNP Power Transostors

POWER TRANSISTORS(35W)

COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

Power Transistors

Power Transistors TO-66 Case

Power Transistors

Power Transistors TO-66 Case

SPRINGFIELD, NEW JERSEY 07081

SILICON NPN/PNP POWER TRANSISTOR

SPRINGFIELD, NEW JERSEY 07081

SILICON NPN/PNP POWER TRANSISTOR

Power Transistors

Power Transistors TO-66 Case

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code

NPN Darlington Transistor

This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • General purpose • High gain amplification.

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC(max) = 625mW

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR

NPN Epitaxial Silicon Transistor

Amplifier Transistor • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC (max)=625mW

COMPLEMENTART SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6430 series types are hermetically seald complementary small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.

NPN SILICON TRANSISTORS

General Purpose Transistors.

COMPLEMENTARY SILICON TRANSISTOR

COMPLEMENTARY SILICON TRANSISTOR

SMALL SIGNAL TRANSISTORS

COMPLEMENTARY SILICON TRANSISTOR

NPN SILICON TRANSISTORS

General Purpose Transistors.

COMPLEMENTARY SILICON TRANSISTOR

COMPLEMENTARY SILICON TRANSISTOR

COMPLEMENTARY SILICON TRANSISTOR

COMPLEMENTARY SILICON TRANSISTOR

COMPLEMENTARY SILICON TRANSISTOR

COMPLEMENTARY SILICON TRANSISTOR

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

POWER TRANSISTORS(25A,200W)

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto2N

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

HIGH POWER PNP SILICON TRANSISTORS

DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications

HIGH POWER PNP SILICON TRANSISTORS

DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto

POWER TRANSISTORS PNP SILICON

High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6437 = 120 Vdc (Min) — 2N6438 • High DC Current Gain — hFE = 20–80 @IC = 10 Adc = 12 (

POWER TRANSISTORS(25A,200W)

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications