Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

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Plastic Medium-Power Silicon Transistors

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POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

SILICON NPN POWER DARLINGTON TRANSISTOR

DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium frequency power applications. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON ■ H

DARLINGTON SILICON POWER TRANSISTORS

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N6388 is designed for general-purpose amplifier and switching applications.