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型号 功能描述 生产厂家 企业 LOGO 操作
H2N6388

NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N6388 is designed for general-purpose amplifier and switching applications.

HSMC

华昕

H2N6388

TO-220AB Bipolar Transistor

HSMC

华昕

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

MOSPEC

统懋

SILICON NPN POWER DARLINGTON TRANSISTOR

DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium frequency power applications. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON ■ H

STMICROELECTRONICS

意法半导体

DARLINGTON SILICON POWER TRANSISTORS

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

BOCA

博卡

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

CENTRAL

H2N6388产品属性

  • 类型

    描述

  • Type:

    NPN

  • BVCEO(V):

    80

  • IC(A):

    10

  • PD(W):

    65

  • hFEMin.:

    1000

  • hFEMax.:

    20000

  • VCE(sat)Max.(V):

    2

  • RoHS(Note1):

    PF

  • Status(Note2):

    M

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