COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

Power Transistors

Power Transistors TO-66 Case

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications

Bipolar PNP Device in a Hermetically sealed TO66

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 5A