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2N631晶体管资料

2N631别名：2N631三极管、2N631晶体管、2N631晶体三极管
2N631生产厂家：CSR_美国电子晶体管公司_IDI
2N631制作材料：Ge-PNP
2N631性质：低频或音频放大（LF）
2N631封装形式：直插封装
2N631极限工作电压：25V
2N631最大电流允许值：0.05A
2N631最大工作频率：<1MHZ或未知
2N631引脚数：3
2N631最大耗散功率：0.167W
2N631放大倍数：
2N631图片代号：D-9
2N631vtest：25
2N631htest：999900
2N631atest：0.05
2N631wtest：0.167

2N631代换 2N631用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX54A,

2N631价格

参考价格：￥139.3520

型号：2N6317 品牌：Microsemi Commercial Com 备注：这里有2N631多少钱，2025年最近7天走势，今日出价，今日竞价，2N631批发/采购报价，2N631行情走势销售排行榜，2N631报价。

型号	功能描述	生产厂家企业	LOGO
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	boca 博卡	boca
2N6312	Power Transistors Power Transistors TO-66 Case	Central	Central
2N6312	isc Silicon PNP Power Transistor DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6312	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6313	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6313	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6313	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6313	Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 5A	SEME-LAB	SEME-LAB
2N6313	POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	MOSPEC 统懋	MOSPEC
2N6313	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6313	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	boca 博卡	boca
2N6313	Power Transistors Power Transistors TO-66 Case	Central	Central
2N6314	Power Transistors Power Transistors TO-66 Case	Central	Central
2N6314	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	boca 博卡	boca
2N6314	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6314	POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	MOSPEC 统懋	MOSPEC
2N6314	Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 5A	SEME-LAB	SEME-LAB
2N6314	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6314	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6314	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6315	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6315	SILICON POWER TRANSISTOR COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6315	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6315	COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.	SEME-LAB	SEME-LAB
2N6315	POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	MOSPEC 统懋	MOSPEC
2N6315	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6315	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER	Central	Central
2N6315	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	boca 博卡	boca
2N6315	Power Transistors Power Transistors TO-66 Case	Central	Central
2N6316	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	boca 博卡	boca
2N6316	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER	Central	Central
2N6316	Power Transistors Power Transistors TO-66 Case	Central	Central
2N6316	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6316	POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	MOSPEC 统懋	MOSPEC
2N6316	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6316	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6316	COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.	SEME-LAB	SEME-LAB
2N6317	SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6317	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6317	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6315/6316 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6317	COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.	SEME-LAB	SEME-LAB
2N6317	POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	MOSPEC 统懋	MOSPEC
2N6317	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6315/6316 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6317	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER	Central	Central
2N6317	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	boca 博卡	boca
2N6317	Power Transistors Power Transistors TO-66 Case	Central	Central
2N6318	Power Transistors Power Transistors TO-66 Case	Central	Central
2N6318	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	boca 博卡	boca
2N6318	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER	Central	Central
2N6318	POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	MOSPEC 统懋	MOSPEC
2N6318	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6315/6316 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6318	SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6318	COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.	SEME-LAB	SEME-LAB
2N6318	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6315/6316 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6318	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6312	Silicon PNP Power Transistors 文件：117.76 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N6312	Bipolar PNP Device in a Hermetically sealed TO66 文件：15.98 Kbytes Page：1 Pages	SEME-LAB	SEME-LAB
2N6312	COMPLEMENTARY SILICON POWER TRANSISTORS 文件：344.67 Kbytes Page：2 Pages	Central	Central

2N631产品属性

类型
描述
型号
2N631
制造商
Microsemi Corporation
功能描述
TRANS GP BJT NPN 60V 7A 2PIN TO-66 - Bulk

2N631供应商更多...

更新时间：2025-12-25 13:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市弘为电子有限公司	2N6315	MOTOROLA	24+	TO-66	1200	原装现货假一罚十	询价
深圳市福田区亿兴成电子商行	2N6315	MOT	CAN	6688	7952	现货库存	询价
深圳市昂芯微科技有限公司	2N6315	MOT	23+	CAN	5628	原厂原装	询价
中天科工半导体（深圳）有限公司	2N6315	MOTOROLA/摩托罗拉	20+	TO-66	67500	原装优势主营型号-可开原型号增税票	询价
深圳市纳艾斯科技有限公司	2N6315	SML	24+	TO-66	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
现代芯城（深圳）科技有限公司	2N6315		24+	N/A	51000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市安富世纪电子有限公司	2N6315	ADI	23+	N/A	8000	只做原装现货	询价
深圳市乐峰达科技有限公司	2N6315	MOTOROLA/摩托罗拉	25+	CAN	16850	全新原装正品、可开增票、可溯源、一站式配单	询价
千层芯半导体(深圳)有限公司	2N6315	MOT	24+	CAN	18700		询价
深圳市昊创电子有限公司	2N6315	MOT/MSC	专业铁帽	TO-66	1000	原装铁帽专营,代理渠道量大可订货	询价

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2N631晶体管资料

2N631价格

2N631产品属性

2N631供应商更多...

2N631芯片相关品牌

2N631规格书下载地址

2N631参数引脚图相关

2N631数据表相关新闻

2N60G-TO220FT-A-TG_UTC代理商

2N7002 MOSFET N-CHANNEL

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2N6043G

2N6509G中文资料

DdatasheetPDF页码索引