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2N631晶体管资料

2N631别名：2N631三极管、2N631晶体管、2N631晶体三极管
2N631生产厂家：CSR_美国电子晶体管公司_IDI
2N631制作材料：Ge-PNP
2N631性质：低频或音频放大（LF）
2N631封装形式：直插封装
2N631极限工作电压：25V
2N631最大电流允许值：0.05A
2N631最大工作频率：<1MHZ或未知
2N631引脚数：3
2N631最大耗散功率：0.167W
2N631放大倍数：
2N631图片代号：D-9
2N631vtest：25
2N631htest：999900
2N631atest：0.05
2N631wtest：0.167

2N631代换 2N631用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX54A,

2N631价格

参考价格：￥139.3520

型号：2N6317 品牌：Microsemi Commercial Com 备注：这里有2N631多少钱，2026年最近7天走势，今日出价，今日竞价，2N631批发/采购报价，2N631行情走势销售排行榜，2N631报价。

型号	功能描述	生产厂家企业	LOGO
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	BOCA 博卡	BOCA
2N6312	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6312	isc Silicon PNP Power Transistor DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6312	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6313	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6313	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6313	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6313	Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 5A	SEME-LAB	SEME-LAB
2N6313	POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	MOSPEC 统懋	MOSPEC
2N6313	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6313	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	BOCA 博卡	BOCA
2N6313	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6314	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6314	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	BOCA 博卡	BOCA
2N6314	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6314	POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	MOSPEC 统懋	MOSPEC
2N6314	Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 5A	SEME-LAB	SEME-LAB
2N6314	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6314	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6314	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6315	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6315	SILICON POWER TRANSISTOR COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6315	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6315	COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.	SEME-LAB	SEME-LAB
2N6315	POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	MOSPEC 统懋	MOSPEC
2N6315	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6315	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER	CENTRAL	CENTRAL
2N6315	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	BOCA 博卡	BOCA
2N6315	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6315	PNP Transistor %3Cp%3E%3Cspan%20style%3D%22color%3A%20%23000000%3B%22%3EThese%202N6315%20and%202N6316%20devices%20are%20an%20excellent%20choice%20for%20un-tuned%20amplifier%20applications.%C2%A0%20It%20i	MICROCHIP 微芯科技	MICROCHIP
2N6316	COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.	SEME-LAB	SEME-LAB
2N6316	PNP Transistor %3Cp%3E%3Cspan%20style%3D%22color%3A%20%23000000%3B%22%3EThese%202N6315%20and%202N6316%20devices%20are%20an%20excellent%20choice%20for%20un-tuned%20amplifier%20applications.%C2%A0%20It%20i	MICROCHIP 微芯科技	MICROCHIP
2N6316	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	BOCA 博卡	BOCA
2N6316	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER	CENTRAL	CENTRAL
2N6316	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6316	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6316	POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	MOSPEC 统懋	MOSPEC
2N6316	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6317/6318 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6316	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6317	SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6317	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6317	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6315/6316 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6317	COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.	SEME-LAB	SEME-LAB
2N6317	POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	MOSPEC 统懋	MOSPEC
2N6317	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6315/6316 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6317	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER	CENTRAL	CENTRAL
2N6317	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	BOCA 博卡	BOCA
2N6317	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6318	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6318	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	BOCA 博卡	BOCA
2N6318	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER	CENTRAL	CENTRAL
2N6318	POWER TRANSISTORS(7.0A,90W) 7.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 90 WATTS	MOSPEC 统懋	MOSPEC
2N6318	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6315/6316 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6318	SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6318	COMPLEMENTARY SILICON FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.	SEME-LAB	SEME-LAB
2N6318	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Complement to type 2N6315/6316 APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6318	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6312	Silicon PNP Power Transistors 文件：117.76 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC

2N631产品属性

类型
描述
型号
2N631
制造商
CENTRAL
制造商全称
Central Semiconductor Corp
功能描述
Power Transistors

2N631供应商更多...

更新时间：2026-5-15 19:15:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	2N6315	SML	22+	TO-66	20000	公司只有原装品质保证	询价
中天科工半导体（深圳）有限公司	2N6315	MOTOROLA/摩托罗拉	20+	TO-66	67500	原装优势主营型号-可开原型号增税票	询价
深圳市达恩科技有限公司	2N6315	MOT	24+	CAN	2257	进口原装正品优势供应	询价
深圳市威雅利发展有限公司	2N6315	SML	0744+0439+	TO-66	127	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市科恒伟业电子有限公司	2N6315	MOTOROLA/摩托罗拉	2540+	CAN	8595	只做原装正品假一赔十为客户做到零风险!!	询价
千层芯半导体(深圳)有限公司	2N6315	MOT	24+	CAN	18700		询价
深圳市赛特兴科技有限公司	2N6315贴片三极管	MOTOROLA/摩托罗拉	QQ咨询	CAN	105	全新原装研究所指定供货商	询价
深圳市一线半导体有限公司	2N6315		24+	TO-66	10000	全新	询价
深圳市昂芯微科技有限公司	2N6315	MOT	23+	CAN	5628	原厂原装	询价
深圳市纳艾斯科技有限公司	2N6315	SML	24+	TO-66	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2N631晶体管资料

2N631价格

2N631产品属性

2N631供应商更多...

2N631芯片相关品牌

2N631规格书下载地址

2N631参数引脚图相关

2N631数据表相关新闻

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2N6509G中文资料

DdatasheetPDF页码索引