EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

Complementary Power Transistors

[multicomp] Features: • Collector-Emitter sustaining voltage- VCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. • DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. • Complementary Silicon Plastic Power Transistors.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications

TO-220 - Power Transistors and Darlingtons

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