2N629晶体管资料
2N629别名:2N629三极管、2N629晶体管、2N629晶体三极管
2N629生产厂家:美国电子晶体管公司_美国摩托罗拉半导体公司_美国硅
2N629制作材料:Ge-PNP
2N629性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2N629封装形式:直插封装
2N629极限工作电压:80V
2N629最大电流允许值:10A
2N629最大工作频率:<1MHZ或未知
2N629引脚数:2
2N629最大耗散功率:94W
2N629放大倍数:
2N629图片代号:E-44
2N629vtest:80
2N629htest:999900
- 2N629atest:10
2N629wtest:94
2N629代换 2N629用什么型号代替:AL100,AL101,AUY21,2N1550,2N1554,2N1558,2N2292,2N2293,3AD57B,
2N629价格
参考价格:¥5.2391
型号:2N6290 品牌:Central 备注:这里有2N629多少钱,2026年最近7天走势,今日出价,今日竞价,2N629批发/采购报价,2N629行情走势销售排行榜,2N629报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N629 | GE PNP POWER BJT germanium power transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N629 | germanium power transistors germanium power transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N629 | germanium power transistors 文件:76.74 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N629 | Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SI NPN POWER BJT Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications | SAVANTIC | |||
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications | BOCA 博卡 | |||
NPN PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications | CDIL | |||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | CENTRAL | |||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. | CENTRAL | |||
POWER TRANSISTORS(7A,40W) 2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts | MOSPEC 统懋 | |||
Complementary Power Transistors [multicomp] Features: • Collector-Emitter sustaining voltage- VCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. • DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. • Complementary Silicon Plastic Power Transistors. | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications | ISC 无锡固电 | |||
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications | BOCA 博卡 | |||
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications | SAVANTIC | |||
7.0 A,70 V,NPN 双极功率晶体管 The Power 7A 70 VBipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices\n• Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292\n• High C; | ONSEMI 安森美半导体 | |||
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications | BOCA 博卡 | |||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc − | ONSEMI 安森美半导体 | |||
PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications | CDIL | |||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. | CENTRAL | |||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | CENTRAL | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications | ISC 无锡固电 | |||
POWER TRANSISTORS(7A,40W) 2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts | MOSPEC 统懋 | |||
PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications | CDIL | |||
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications | BOCA 博卡 | |||
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN DARLINGTON TRANSISTOR 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
COMPLEMENTARY SILICON DARLINGTONl 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | CENTRAL | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
Silicon NPN Transistor Darlington Power Amplifier, Switch Description: The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose amplifier, low−frequency switching and hammer driver applications. Features: High DC Current Gain: hFE = 3000 Typ @ IC = 2A Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V | NTE | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
COMPLEMENTARY SILICON DARLINGTONl 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | CENTRAL | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN DARLINGTON TRANSISTOR 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications | SAVANTIC | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications | ISC 无锡固电 | |||
COMPLEMENTARY SILICON DARLINGTONl 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | CENTRAL | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications | ISC 无锡固电 | |||
COMPLEMENTARY SILICON DARLINGTONl 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | CENTRAL | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications | SAVANTIC | |||
SI PNP POWER BJT 2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
DARLINGTON SILICON POWER TRANSISTOR DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6300/6301 APPLICATIONS • General purpose power amplifier and low frequency switching applications | SAVANTIC | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
PNP Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/540 • TO-66 (TO-213AA) Package | MA-COM | |||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Power Transistors TO-66 Case | CENTRAL | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts | BOCA 博卡 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6300/6301 APPLICATIONS • General purpose power amplifier and low frequency switching applications | ISC 无锡固电 |
2N629产品属性
- 类型
描述
- Maximum Transition Frequency:
4(Min)MHz
- Maximum Power Dissipation:
40000mW
- Maximum Operating Temperature:
150°C
- Maximum Emitter Base Voltage:
5V
- Maximum DC Collector Current:
7A
- Maximum Collector Emitter Voltage:
30V
- Maximum Collector Emitter Saturation Voltage:
3.5@3A@7AV
- Maximum Collector Base Voltage:
40V
- Material:
Si
- Configuration:
Single
- Category:
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
24+ |
TO-66(TO-213AA) |
907 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi |
25+ |
TO-220 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
25+ |
TO-220 |
45000 |
ONSEMI/安森美全新现货2N6292即刻询购立享优惠#长期有排单订 |
|||
ON |
24+ |
N/A |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ONSEMI |
24+ |
NA |
5500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
MOT |
TO |
5350 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SOLID STATE |
21+ |
TO-66 |
1902 |
绝对公司现货,不止网上数量!原装正品,假一赔十! |
|||
S |
24+ |
TO-03 |
200 |
进口原装正品优势供应 |
|||
SSI |
23+ |
CAN |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MOT |
25+ |
49 |
公司优势库存 热卖中!! |
2N629规格书下载地址
2N629参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N6308
- 2N6307
- 2N6306
- 2N6305
- 2N6304
- 2N6303
- 2N6302
- 2N6301
- 2N6300
- 2N630
- 2N63
- 2N62K3
- 2N6299
- 2N6298
- 2N6297
- 2N6296
- 2N6295
- 2N6294
- 2N6293
- 2N6292G
- 2N6292
- 2N6291
- 2N6290
- 2N6289
- 2N6288G
- 2N6288
- 2N6287G
- 2N6287
- 2N6286G
- 2N6286
- 2N6285
- 2N6284G
- 2N6284
- 2N6283
- 2N6282
- 2N6281
- 2N6280
- 2N628
- 2N6279
- 2N6278
- 2N6277A
- 2N6277
- 2N6276A
- 2N6276
- 2N6275
- 2N6274
- 2N6273
- 2N6272
- 2N6271
2N629数据表相关新闻
2N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N7002 MOSFET N-CHANNEL
2N7002 MOSFET N-CHANNEL 60V 115mA
2023-2-232N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N7000L-TO92B-TG
2N7000L-TO92B-TG
2023-1-302N6043G
原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109