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2N629晶体管资料

  • 2N629别名:2N629三极管、2N629晶体管、2N629晶体三极管

  • 2N629生产厂家:美国电子晶体管公司_美国摩托罗拉半导体公司_美国硅

  • 2N629制作材料:Ge-PNP

  • 2N629性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N629封装形式:直插封装

  • 2N629极限工作电压:80V

  • 2N629最大电流允许值:10A

  • 2N629最大工作频率:<1MHZ或未知

  • 2N629引脚数:2

  • 2N629最大耗散功率:94W

  • 2N629放大倍数

  • 2N629图片代号:E-44

  • 2N629vtest:80

  • 2N629htest:999900

  • 2N629atest:10

  • 2N629wtest:94

  • 2N629代换 2N629用什么型号代替:AL100,AL101,AUY21,2N1550,2N1554,2N1558,2N2292,2N2293,3AD57B,

2N629价格

参考价格:¥5.2391

型号:2N6290 品牌:Central 备注:这里有2N629多少钱,2026年最近7天走势,今日出价,今日竞价,2N629批发/采购报价,2N629行情走势销售排行榜,2N629报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N629

GE PNP POWER BJT

germanium power transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N629

germanium power transistors

germanium power transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N629

germanium power transistors

文件:76.74 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N629

Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SI NPN POWER BJT

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications

SAVANTIC

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

BOCA

博卡

NPN PLASTIC POWER TRANSISTOR

NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications

CDIL

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

CENTRAL

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications.

CENTRAL

POWER TRANSISTORS(7A,40W)

2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

MOSPEC

统懋

Complementary Power Transistors

[multicomp] Features: • Collector-Emitter sustaining voltage- VCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. • DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. • Complementary Silicon Plastic Power Transistors.

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications

ISC

无锡固电

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

BOCA

博卡

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications

SAVANTIC

7.0 A,70 V,NPN 双极功率晶体管

The Power 7A 70 VBipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices\n• Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292\n• High C;

ONSEMI

安森美半导体

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

BOCA

博卡

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

ONSEMI

安森美半导体

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

CDIL

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications.

CENTRAL

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

CENTRAL

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications

ISC

无锡固电

POWER TRANSISTORS(7A,40W)

2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

MOSPEC

统懋

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

CDIL

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

BOCA

博卡

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN DARLINGTON TRANSISTOR

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON DARLINGTONl

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

CENTRAL

Power Transistors

Power Transistors TO-66 Case

CENTRAL

Silicon NPN Transistor Darlington Power Amplifier, Switch

Description: The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose amplifier, low−frequency switching and hammer driver applications. Features:  High DC Current Gain: hFE = 3000 Typ @ IC = 2A  Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V

NTE

Power Transistors

Power Transistors TO-66 Case

CENTRAL

COMPLEMENTARY SILICON DARLINGTONl

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

CENTRAL

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN DARLINGTON TRANSISTOR

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications

SAVANTIC

Power Transistors

Power Transistors TO-66 Case

CENTRAL

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications

ISC

无锡固电

COMPLEMENTARY SILICON DARLINGTONl

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

CENTRAL

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications

ISC

无锡固电

COMPLEMENTARY SILICON DARLINGTONl

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

CENTRAL

Power Transistors

Power Transistors TO-66 Case

CENTRAL

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications

SAVANTIC

SI PNP POWER BJT

2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DARLINGTON SILICON POWER TRANSISTOR

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6300/6301 APPLICATIONS • General purpose power amplifier and low frequency switching applications

SAVANTIC

Power Transistors

Power Transistors TO-66 Case

CENTRAL

PNP Darlington Power Silicon Transistor

Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/540 • TO-66 (TO-213AA) Package

MA-COM

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Power Transistors TO-66 Case

CENTRAL

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts

BOCA

博卡

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6300/6301 APPLICATIONS • General purpose power amplifier and low frequency switching applications

ISC

无锡固电

2N629产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    4(Min)MHz

  • Maximum Power Dissipation:

    40000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    5V

  • Maximum DC Collector Current:

    7A

  • Maximum Collector Emitter Voltage:

    30V

  • Maximum Collector Emitter Saturation Voltage:

    3.5@3A@7AV

  • Maximum Collector Base Voltage:

    40V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP(美国微芯)
24+
TO-66(TO-213AA)
907
原厂订货渠道,支持BOM配单一站式服务
onsemi
25+
TO-220
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
ONSEMI/安森美
25+
TO-220
45000
ONSEMI/安森美全新现货2N6292即刻询购立享优惠#长期有排单订
ON
24+
N/A
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
ONSEMI
24+
NA
5500
只做原装正品现货 欢迎来电查询15919825718
MOT
TO
5350
一级代理 原装正品假一罚十价格优势长期供货
SOLID STATE
21+
TO-66
1902
绝对公司现货,不止网上数量!原装正品,假一赔十!
S
24+
TO-03
200
进口原装正品优势供应
SSI
23+
CAN
6850
只做原装正品假一赔十为客户做到零风险!!
MOT
25+
49
公司优势库存 热卖中!!

2N629数据表相关新闻