POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications.

POWER TRANSISTORS(7A,40W)

2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

7.0 A，70 V，NPN 双极功率晶体管

The Power 7A 70 VBipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices\n• Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292\n• High C;

Silicon NPN Power Transistors

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封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 70V 7A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-220 - Power Transistors and Darlingtons

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Complementary Silicon Plastic Power Transistors

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Complementary Silicon Plastic Power Transistors

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7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 ??50 ??70 VOLTS, 40 WATTS

文件：117.76 Kbytes Page：5 Pages

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 70V 7A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Silicon Plastic Power Transistors

文件：112.3 Kbytes Page：5 Pages

7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 ??50 ??70 VOLTS, 40 WATTS

文件：117.76 Kbytes Page：5 Pages