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2N628晶体管资料

  • 2N628别名:2N628三极管、2N628晶体管、2N628晶体三极管

  • 2N628生产厂家:美国电子晶体管公司_美国摩托罗拉半导体公司_美国硅

  • 2N628制作材料:Ge-PNP

  • 2N628性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N628封装形式:直插封装

  • 2N628极限工作电压:60V

  • 2N628最大电流允许值:10A

  • 2N628最大工作频率:<1MHZ或未知

  • 2N628引脚数:2

  • 2N628最大耗散功率:94W

  • 2N628放大倍数

  • 2N628图片代号:E-44

  • 2N628vtest:60

  • 2N628htest:999900

  • 2N628atest:10

  • 2N628wtest:94

  • 2N628代换 2N628用什么型号代替:AL100,AL101,AUY21,2N1550,2N1554,2N1558,2N2292,2N2293,3AD57A,

2N628价格

参考价格:¥43.4784

型号:2N6283 品牌:CENTRAL SEMICONDUCTOR 备注:这里有2N628多少钱,2026年最近7天走势,今日出价,今日竞价,2N628批发/采购报价,2N628行情走势销售排行榜,2N628报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N628

germanium power transistors

germanium power transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N628

germanium power transistors

文件:76.74 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N628

Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION · With TO-3 package · Complement to type 2N6285/6286/6287 · High DC current gain · DARLINGTON APPLICATIONS · For use in general-purpose amplifier and low-frequency switching applications

ISC

无锡固电

NPN SILICON DARLINGTON POWER TRANSISTOR

NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary PNP are 2N6285, 2N6286, 2N6287 Compliance to RoHS.

COMSET

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

COLLECTOR-EMITTER VOLTAGE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION · With TO-3 package · Complement to type 2N6285/6286/6287 · High DC current gain · DARLINGTON APPLICATIONS · For use in general-purpose amplifier and low-frequency switching applications

SAVANTIC

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

ONSEMI

安森美半导体

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

BOCA

博卡

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

CENTRAL

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Power Transistors TO-3 Case (Continued)

CENTRAL

POWER TRANSISTORS(20A,160W)

MOSPEC

统懋

NPN Darlington Power Silicon Transistor

Features ● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371 ● TO-3 (TO-204AA) Package

MA-COM

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Power Transistors TO-3 Case (Continued)

CENTRAL

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

CENTRAL

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

BOCA

博卡

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

ONSEMI

安森美半导体

Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

ONSEMI

安森美半导体

Silicon NPN Power Transistors

DESCRIPTION · With TO-3 package · Complement to type 2N6285/6286/6287 · High DC current gain · DARLINGTON APPLICATIONS · For use in general-purpose amplifier and low-frequency switching applications

SAVANTIC

COLLECTOR-EMITTER VOLTAGE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

NPN SILICON DARLINGTON POWER TRANSISTOR

NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary PNP are 2N6285, 2N6286, 2N6287 Compliance to RoHS.

COMSET

POWER TRANSISTORS(20A,160W)

MOSPEC

统懋

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Power Transistors TO-3 Case (Continued)

CENTRAL

NPN SILICON DARLINGTON POWER TRANSISTOR

NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary PNP are 2N6285, 2N6286, 2N6287 Compliance to RoHS.

COMSET

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

COLLECTOR-EMITTER VOLTAGE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION · With TO-3 package · Complement to type 2N6285/6286/6287 · High DC current gain · DARLINGTON APPLICATIONS · For use in general-purpose amplifier and low-frequency switching applications

SAVANTIC

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The 2N6284 is an epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. The complementary PNP type is 2N6287. Features ■ Complementary transistors i

STMICROELECTRONICS

意法半导体

Darlington ComplementarySilicon Power Transistors

Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(s

ONSEMI

安森美半导体

Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

ONSEMI

安森美半导体

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

ONSEMI

安森美半导体

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

BOCA

博卡

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

CENTRAL

NPN Darlington Power Silicon Transistor

Features ● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371 ● TO-3 (TO-204AA) Package

MA-COM

POWER TRANSISTORS(20A,160W)

MOSPEC

统懋

Darlington ComplementarySilicon Power Transistors

Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(s

ONSEMI

安森美半导体

Darlington ComplementarySilicon Power Transistors

Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(s

ONSEMI

安森美半导体

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

BOCA

博卡

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

CENTRAL

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Power Transistors TO-3 Case (Continued)

CENTRAL

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

ONSEMI

安森美半导体

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6282/6283/6284 • High DC current gain • DARLINGTON APPLICATIONS • For use in general-purpose amplifier and low-frequency switching applications

SAVANTIC

COLLECTOR-EMITTER VOLTAGE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6282/6283/6284 • High DC current gain • DARLINGTON APPLICATIONS • For use in general-purpose amplifier and low-frequency switching applications

ISC

无锡固电

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary NPN are 2N6282, 2N6283, 2N6284 Compliance to RoHS.

COMSET

POWER TRANSISTORS(20A,160W)

MOSPEC

统懋

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary NPN are 2N6282, 2N6283, 2N6284 Compliance to RoHS.

COMSET

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6282/6283/6284 • High DC current gain • DARLINGTON APPLICATIONS • For use in general-purpose amplifier and low-frequency switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6282/6283/6284 • High DC current gain • DARLINGTON APPLICATIONS • For use in general-purpose amplifier and low-frequency switching applications

SAVANTIC

COLLECTOR-EMITTER VOLTAGE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

ONSEMI

安森美半导体

Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

ONSEMI

安森美半导体

Darlington ComplementarySilicon Power Transistors

Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(s

ONSEMI

安森美半导体

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

CENTRAL

2N628产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    4(Min)MHz

  • Maximum Power Dissipation:

    40000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    5V

  • Maximum DC Collector Current:

    7A

  • Maximum Collector Emitter Voltage:

    30V

  • Maximum Collector Emitter Saturation Voltage:

    3.5@3A@7AV

  • Maximum Collector Base Voltage:

    40V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-17 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROSEMI/美高森美
25+
MODULE
210
主打螺丝模块系列
OMRON/欧姆龙
2608+
/
206845
一级代理,原装现货
ON
24+
TO-3
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ON/安森美
23+
TO-3
28888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品
26+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择
ONSEMI/安森美
2025+
TO220
5000
原装进口价格优 请找坤融电子!
TI
最新
BGA
6850
莱克讯每片来自原厂原盒原包装假一罚十价优
SML
2318+
TO-3
5620
十年专业专注 优势渠道商正品保证公司现货
ON
25+
TO-3
2630
只做原装进口现货

2N628数据表相关新闻