DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Power Transistors TO-3 Case (Continued)

POWER TRANSISTORS(20A,160W)

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary NPN are 2N6282, 2N6283, 2N6284 Compliance to RoHS.

Power Transistors

Power Transistors

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6282/6283/6284 • High DC current gain • DARLINGTON APPLICATIONS • For use in general-purpose amplifier and low-frequency switching applications

COLLECTOR-EMITTER VOLTAGE

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6282/6283/6284 • High DC current gain • DARLINGTON APPLICATIONS • For use in general-purpose amplifier and low-frequency switching applications

160W PNP Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

Transistor

Silicon PNP Power Transistors

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Bipolar PNP Device in a Hermetically sealed TO3

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封装/外壳：模具 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个