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2N6286晶体管资料
2N6286别名：2N6286三极管、2N6286晶体管、2N6286晶体三极管
2N6286生产厂家：美国摩托罗拉半导体公司_KER_美国硅晶体技术公司
2N6286制作材料：Si-P+Darl+Di
2N6286性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N6286封装形式：贴片封装
2N6286极限工作电压：80V
2N6286最大电流允许值：20A
2N6286最大工作频率：<1MHZ或未知
2N6286引脚数：2
2N6286最大耗散功率：160W
2N6286放大倍数：β>750
2N6286图片代号：E-44
2N6286vtest：80
2N6286htest：999900
- 2N6286atest：20
2N6286wtest：160
2N6286代换 2N6286用什么型号代替：BDX66A,BDX68A,BDX68B,BDX68C,MJ4031,MJ11013,TIP646,2SB694,
2N6286价格
参考价格：￥13.6798
型号：2N6286G 品牌：ONSemi 备注：这里有2N6286多少钱，2025年最近7天走势，今日出价，今日竞价，2N6286批发/采购报价，2N6286行情走势销售排行榜，2N6286报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2N6286 | POWER TRANSISTORS(20A,160W)
| MOSPEC 统懋 |   | |
2N6286 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai | ONSEMI 安森美半导体 | | |
2N6286 | DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
| boca 博卡 | | |
2N6286 | Darlington Complementary Silicon Power Transistors Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai | ONSEMI 安森美半导体 | | |
2N6286 | POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | |
2N6286 | Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
2N6286 | Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6282/6283/6284 • High DC current gain • DARLINGTON APPLICATIONS • For use in general-purpose amplifier and low-frequency switching applications | SAVANTIC | | |
2N6286 | Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6282/6283/6284 • High DC current gain • DARLINGTON APPLICATIONS • For use in general-purpose amplifier and low-frequency switching applications | ISC 无锡固电 | | |
2N6286 | Darlington ComplementarySilicon Power Transistors Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(s | ONSEMI 安森美半导体 | | |
2N6286 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Power Transistors TO-3 Case (Continued) | Central | | |
2N6286 | PNP DARLINGTON POWER SILICON TRANSISTOR PNP DARLINGTON POWER SILICON TRANSISTOR The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary NPN are 2N6282, 2N6283, 2N6284 Compliance to RoHS. | COMSET | | |
2N6286 | COLLECTOR-EMITTER VOLTAGE
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N6286 | Silicon PNP Power Transistors 文件：115.79 Kbytes Page：3 Pages | SAVANTIC | | |
2N6286 | PNP DARLINGTON POWER SILICON TRANSISTOR 文件：58.99 Kbytes Page：2 Pages | Microsemi 美高森美 | | |
2N6286 | PNP Darlington Power Silicon Transistor 文件：440.23 Kbytes Page：4 Pages | MA-COM | | |
2N6286 | Bipolar PNP Device in a Hermetically sealed TO3 文件：15.53 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | |
2N6286 | Darlington Complementary Silicon Power Transistors 文件：141.3 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
2N6286 | Darlington Complementary Silicon Power Transistors 文件：155.38 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
2N6286 | PNP DARLINGTON POWER SILICON TRANSISTOR 文件：58.36 Kbytes Page：2 Pages | Microsemi 美高森美 | | |
2N6286 | PNP DARLINGTON POWER SILICON TRANSISTOR 文件：46.66 Kbytes Page：2 Pages | Microsemi 美高森美 | | |
2N6286 | 包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | |
Darlington ComplementarySilicon Power Transistors Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(s | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS PNP DARL 80V 20A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | |
2N6286产品属性
- 类型
描述
- 型号
2N6286
- 功能描述
达林顿晶体管 20A 80V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-204 |
977 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI/安森美 |
25+ |
TO-3 |
45000 |
ONSEMI/安森美全新现货2N6286即刻询购立享优惠#长期有排单订 |
|||
ON |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ON/安森美 |
21+ |
NA |
413 |
只做原装,假一罚十 |
|||
STM |
24+ |
N/A |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ON/安森美 |
23+ |
NA |
25630 |
原装正品 |
|||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
最新 |
2000 |
原装正品现货 |
|||||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
三年内 |
1983 |
只做原装正品 |
2N6286规格书下载地址
2N6286参数引脚图相关
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2019-2-18
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