2N627晶体管资料
2N627别名：2N627三极管、2N627晶体管、2N627晶体三极管
2N627生产厂家：美国电子晶体管公司_美国摩托罗拉半导体公司_美国硅
2N627制作材料：Ge-PNP
2N627性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N627封装形式：直插封装
2N627极限工作电压：40V
2N627最大电流允许值：10A
2N627最大工作频率：<1MHZ或未知
2N627引脚数：2
2N627最大耗散功率：94W
2N627放大倍数：
2N627图片代号：E-44
2N627vtest：40
2N627htest：999900
- 2N627atest：10
2N627wtest：94
2N627代换 2N627用什么型号代替：AL100,AL101,AUY21,2N1549,2N1553,2N1557,2N2288,2N2289,2N2290,2N2291,2N2292,2N2293,3AD57A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N627 | germanium power transistors germanium power transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
2N627 | germanium power transistors 文件：76.74 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N627 | Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capability • Wide safe operating area APPLICATIONS • Designed for audio amplifier and switching circuits applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capability • Wide safe operating area APPLICATIONS • Designed for audio amplifier and switching circuits applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capability • Wide safe operating area APPLICATIONS • Designed for audio amplifier and switching circuits applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capability • Wide safe operating area APPLICATIONS • Designed for audio amplifier and switching circuits applications | SAVANTIC | | ||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEo(sus)= 10OV(Min) • High Current Capability • Wide Area of Safe Operation APPLICATIONS • Designed for use in audio amplifier and switching circuits applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN POWER TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH-POWER NPN SILICON TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • High Switching Speed • High DC Current Gain- : hFE= 30-120@ IC= 20A • Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A • Complement to Type 2N6377 APPLICATIONS • Designed for use in industrial-military power amplifier and switching circuit ap | ISC 无锡固电 | | ||
PNP POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 | MICROSEMI 美高森美 | | ||
POWER TRANSISTORS NPN SILICON High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62 | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS NPN SILICON High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62 | ONSEMI 安森美半导体 | | ||
HIGH-POWER NPN SILICON TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • High Switching Speed • High DC Current Gain- : hFE= 30-120@ IC= 20A • Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A • Complement to Type 2N6378 APPLICATIONS • Designed for use in industrial-military power amplifier and switching circuit applications. | ISC 无锡固电 | | ||
NPN POWER TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN POWER TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH-POWER NPN SILICON TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN POWER TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
CIKKECTIR-EMITTER SUSTAINING VOLTAGE NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 | MICROSEMI 美高森美 | | ||
POWER TRANSISTORS NPN SILICON High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62 | ONSEMI 安森美半导体 | | ||
NPN POWER TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN POWER TRANSISTORS NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistor 文件：126.92 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：112.12 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 文件：12.14 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 文件：11.3 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：112.12 Kbytes Page：3 Pages | SAVANTIC | | ||
封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | ||
PNP Transistor | MICROCHIP 微芯科技 | | ||
封装/外壳：TO-211MB，TO-63-4，接线柱 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | ||
PNP Transistor | MICROCHIP 微芯科技 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.19 Kbytes Page：1 Pages | SEME-LAB | | ||
NPN POWER SILICON TRANSISTOR 文件：125.14 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
NPN POWER SILICON TRANSISTOR 文件：125.14 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.19 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.2 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.2 Kbytes Page：1 Pages | SEME-LAB | | ||
isc Silicon NPN Power Transistor 文件：262.54 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Bipolar NPN Device 文件：10.97 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.2 Kbytes Page：1 Pages | SEME-LAB | | ||
SILICON MULTI-EPITAXIAL NPN TRANSISTOR 文件：202.55 Kbytes Page：3 Pages | SEME-LAB | | ||
NPN POWER SILICON TRANSISTOR 文件：125.14 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
isc Silicon NPN Power Transistor 文件：222.02 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SILICON MULTI-EPITAXIAL NPN TRANSISTOR 文件：202.55 Kbytes Page：3 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件：14.38 Kbytes Page：1 Pages | SEME-LAB | | ||
isc Silicon NPN Power Transistor 文件：271.17 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件：14.38 Kbytes Page：1 Pages | SEME-LAB | |
2N627产品属性
- 类型
描述
- Maximum Transition Frequency：
4(Min)MHz
- Maximum Power Dissipation：
40000mW
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
5V
- Maximum DC Collector Current：
7A
- Maximum Collector Emitter Voltage：
30V
- Maximum Collector Emitter Saturation Voltage：
3.5@3A@7AV
- Maximum Collector Base Voltage：
40V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI/美高森美 |
25+ |
MODULE |
230 |
主打螺丝模块系列 |
|||
MOTOROLA/摩托罗拉 |
25+ |
TO-3 |
45000 |
MOTOROLA/摩托罗拉全新现货2N6276即刻询购立享优惠#长期有排单订 |
|||
SSI |
23+ |
TO-3P |
3000 |
原装正品假一罚百!可开增票! |
|||
NES |
23+ |
TO-3 |
164670 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ISC |
专业铁帽 |
TO-3 |
193 |
原装铁帽专营,代理渠道量大可订货 |
|||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
23+ |
TO-3 |
68 |
正规渠道,只有原装! |
|||
TI |
最新 |
BGA |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
SEMELAB |
2447 |
TO-3 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
2N627规格书下载地址
2N627参数引脚图相关
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- 2N6274
- 2N6273
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- 2N6271
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2N627数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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