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2N627晶体管资料

  • 2N627别名:2N627三极管、2N627晶体管、2N627晶体三极管

  • 2N627生产厂家:美国电子晶体管公司_美国摩托罗拉半导体公司_美国硅

  • 2N627制作材料:Ge-PNP

  • 2N627性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N627封装形式:直插封装

  • 2N627极限工作电压:40V

  • 2N627最大电流允许值:10A

  • 2N627最大工作频率:<1MHZ或未知

  • 2N627引脚数:2

  • 2N627最大耗散功率:94W

  • 2N627放大倍数

  • 2N627图片代号:E-44

  • 2N627vtest:40

  • 2N627htest:999900

  • 2N627atest:10

  • 2N627wtest:94

  • 2N627代换 2N627用什么型号代替:AL100,AL101,AUY21,2N1549,2N1553,2N1557,2N2288,2N2289,2N2290,2N2291,2N2292,2N2293,3AD57A,

型号 功能描述 生产厂家 企业 LOGO 操作
2N627

germanium power transistors

germanium power transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N627

germanium power transistors

文件:76.74 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N627

Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box

ETC

知名厂家

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability • Wide safe operating area APPLICATIONS • Designed for audio amplifier and switching circuits applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability • Wide safe operating area APPLICATIONS • Designed for audio amplifier and switching circuits applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability • Wide safe operating area APPLICATIONS • Designed for audio amplifier and switching circuits applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability • Wide safe operating area APPLICATIONS • Designed for audio amplifier and switching circuits applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEo(sus)= 10OV(Min) • High Current Capability • Wide Area of Safe Operation APPLICATIONS • Designed for use in audio amplifier and switching circuits applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-POWER NPN SILICON TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • High DC Current Gain- : hFE= 30-120@ IC= 20A • Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A • Complement to Type 2N6377 APPLICATIONS • Designed for use in industrial-military power amplifier and switching circuit ap

ISC

无锡固电

PNP POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514

MICROSEMI

美高森美

POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62

ONSEMI

安森美半导体

POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62

ONSEMI

安森美半导体

HIGH-POWER NPN SILICON TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • High DC Current Gain- : hFE= 30-120@ IC= 20A • Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A • Complement to Type 2N6378 APPLICATIONS • Designed for use in industrial-military power amplifier and switching circuit applications.

ISC

无锡固电

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-POWER NPN SILICON TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

CIKKECTIR-EMITTER SUSTAINING VOLTAGE

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514

MICROSEMI

美高森美

POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62

ONSEMI

安森美半导体

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistor

文件:126.92 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:112.12 Kbytes Page:3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

文件:12.14 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

文件:11.3 Kbytes Page:1 Pages

SEME-LAB

Silicon NPN Power Transistors

文件:112.12 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

PNP Transistor

MICROCHIP

微芯科技

封装/外壳:TO-211MB,TO-63-4,接线柱 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

PNP Transistor

MICROCHIP

微芯科技

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.19 Kbytes Page:1 Pages

SEME-LAB

NPN POWER SILICON TRANSISTOR

文件:125.14 Kbytes Page:3 Pages

MICROSEMI

美高森美

NPN POWER SILICON TRANSISTOR

文件:125.14 Kbytes Page:3 Pages

MICROSEMI

美高森美

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.19 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.2 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.2 Kbytes Page:1 Pages

SEME-LAB

isc Silicon NPN Power Transistor

文件:262.54 Kbytes Page:2 Pages

ISC

无锡固电

Bipolar NPN Device

文件:10.97 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.2 Kbytes Page:1 Pages

SEME-LAB

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

文件:202.55 Kbytes Page:3 Pages

SEME-LAB

NPN POWER SILICON TRANSISTOR

文件:125.14 Kbytes Page:3 Pages

MICROSEMI

美高森美

isc Silicon NPN Power Transistor

文件:222.02 Kbytes Page:2 Pages

ISC

无锡固电

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

文件:202.55 Kbytes Page:3 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:14.38 Kbytes Page:1 Pages

SEME-LAB

isc Silicon NPN Power Transistor

文件:271.17 Kbytes Page:2 Pages

ISC

无锡固电

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:14.38 Kbytes Page:1 Pages

SEME-LAB

2N627产品属性

  • 类型

    描述

  • 型号

    2N627

  • 功能描述

    TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-3

更新时间:2026-3-17 20:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
25+
TO-3
45000
MOTOROLA/摩托罗拉全新现货2N6276即刻询购立享优惠#长期有排单订
MOT
01+
TO-3
101
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOT
21+
TO3
1625
只做原装正品,不止网上数量,欢迎电话微信查询!
NES
24+
TO-3
200
进口原装正品优势供应
MOTOROLA/摩托罗拉
2450+
TO-3
8850
只做原装正品假一赔十为客户做到零风险!!
MOT
25+23+
TO-3
20915
绝对原装正品全新进口深圳现货
SSI
23+
TO-3P
3000
原装正品假一罚百!可开增票!
SSI
22+
TO-92
12245
现货,原厂原装假一罚十!
SSI
TO-3P
3200
原装长期供货!
ISC
专业铁帽
TO-3
193
原装铁帽专营,代理渠道量大可订货

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