High-Power NPN Silicon Transistors

. . . designed for use in industrial–military power amplifier and switching circuit applications.

• High Collector Emitter Sustaining —

VCEO(sus) = 100 Vdc (Min) — 2N6274

= 120 Vdc (Min) — 2N6275

= 150 Vdc (Min) — 2N6277

• High DC Current Gain —

hFE = 30–120 @ IC = 20 Adc

= 10 (Min) @ IC = 50 Adc

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc

• Fast Switching Times @ IC 20 Adc

tr = 0.35 ms (Max)

ts = 0.8 ms (Max)

tf = 0.25 ms (Max)

• Complement to 2N6377–79