Bipolar NPN Device in a Hermetically sealed TO3

文件：15.2 Kbytes Page：1 Pages

Bipolar Junction Transistors

POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62

HIGH-POWER NPN SILICON TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS 50 AMP SWITCHING • 25 W. Continuous Power • VCEO(sus) to 150 V.

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • High DC Current Gain- : hFE= 30-120@ IC= 20A • Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A • Complement to Type 2N6378 APPLICATIONS • Designed for use in industrial-military power amplifier and switching circuit applications.

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.2 Kbytes Page：1 Pages