型号 功能描述 生产厂家&企业 LOGO 操作

2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N2Amps竊?00VoltsN-ChannelMOSFET

Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge

ESTEKEstek Electronics Co. Ltd

伊泰克电子北京伊泰克电子有限公司

ESTEK

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34834 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,􀀁600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2A,600VN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2A,600VN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2A,600VN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2A,600VN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2A,600VN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2A,600VN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2A,600VN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-Channel650V(D-S)PowerMOSFET

文件:1.08351 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-Channel650V(D-S)MOSFET

文件:1.08612 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-ChannelMOSFETusesadvancedtrenchtechnology

文件:1.77773 Mbytes Page:5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

N-Channel650V(D-S)MOSFET

文件:1.08611 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-CHANNELPOWERMOSFET

文件:235.67 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:212.26 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:212.26 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:212.26 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:212.26 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:212.26 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:212.26 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
更新时间:2025-5-15 17:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
22+
5000
UTC/友顺
18+
TO-220F
7857
全新原装现货,可出样品,可开增值税发票
ON/安森美
24+
NA
30000
房间原装现货特价热卖,有单详谈
ON SEMICONDUCTOR
21+
标准封装
50
保证原装正品,需要联系张小姐 13544103396 微信同号
ST
23+
TO-220
50000
专做原装正品,假一罚百!
CESE
24+
TO-03
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
ST
25+
TO-126
18000
全新原装
UTC
24+
TO-252
2500
只做原装正品现货欢迎来电查询15919825718
UTC
23+
TO251
7635
全新原装优势
FAI
13+
T0252
2500
原装现货价格有优势量大可以发货

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