型号 功能描述 生产厂家 企业 LOGO 操作

2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

UTC

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N2 Amps竊?00Volts N-Channel MOSFET

Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge

ESTEK

伊泰克电子

600V N-Channel Power MOSFET

Features ● RDS(ON)

DYELEC

迪一电子

2A 600V N-channel Enhancement Mode Power MOSFET

文件:1.34834 Mbytes Page:13 Pages

WXDH

东海半导体

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

UTC

友顺

2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

UTC

友顺

2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

UTC

友顺

2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

UTC

友顺

2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

UTC

友顺

2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

UTC

友顺

2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-Channel 650V (D-S) Power MOSFET

文件:1.08351 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

N-Channel 650 V (D-S) MOSFET

文件:1.08612 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件:1.77773 Mbytes Page:5 Pages

DOINGTER

杜因特

N-Channel 650 V (D-S) MOSFET

文件:1.08611 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:235.67 Kbytes Page:7 Pages

UTC

友顺

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:212.26 Kbytes Page:6 Pages

UTC

友顺

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:212.26 Kbytes Page:6 Pages

UTC

友顺

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:212.26 Kbytes Page:6 Pages

UTC

友顺

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:212.26 Kbytes Page:6 Pages

UTC

友顺

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:212.26 Kbytes Page:6 Pages

UTC

友顺

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:212.26 Kbytes Page:6 Pages

UTC

友顺

更新时间:2025-12-25 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
FAIRCHILD/仙童
24+
NA/
58000
优势代理渠道,原装正品,可全系列订货开增值税票
NA
TO220F
15620
一级代理 原装正品假一罚十价格优势长期供货
AAT
23+
TO-220
5000
XY/星宇佳
21+
TO-252
72500
自主品牌 量大可定
FAI
13+
T0252
2500
原装现货价格有优势量大可以发货
25+
3000
公司现货库存
25+
3000
公司现货库存
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货2N6075B即刻询购立享优惠#长期有排单订
Bychip/百域芯
21+
TO-252
30000
实单必成 质强价优 可开13点增值税

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