DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

Power Transistors

Power Transistors

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

COLLECTOR-EMITTER VOLTAGE

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION • Built-in Base-Emitter Shunt Resistors • High DC current gainhFE = 750 (Min) @ IC = -6A • Collector-Emitter Sustaining VoltageVCEO(SUS)= -80V(Min) • Complement to type 2N6058 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications.

Bipolar PNP Device in a Hermetically sealed TO3

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 12A

Power Transistors

Power Transistors

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

Darlington PNP Silicon Power -80V to -100V, -12A

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows

Darlington PNP Silicon Power -80V to -100V, -12A

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows

12 A, 100 V PNP Darlington Bipolar Power Transistor

This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications. • High DC Current GainhFE = 3500 (Typ) @ IC = 5.0 Adc\n• Collector-Emitter Sustaining Voltage— @ 100 mAVCEO(sus) = 80 Vdc (Min)—2N6058100 Vdc (Min)—2N6052, 2N6059\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistors\n• This is a Pb-Free Device;

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

Power Transistors

Power Transistors

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W

Description : A silicon PNP Darlington transistors in a TO-3 type case designed for general-purpose amplifier and low-frequency applications Features - High DC Current Gain - Collector-Emitter Sustaining Voltage : Vced(sus) = 100V Min @ 100mA -Monolithic Construction with Buit-in Base-Emitte

Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • M

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6053, 6055 Series types are Complementary Silicon Darlington Power Transistors designed for amplifier and switching applications.

COMPLEMENTARY POWER DARLINGTON

COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055

COMPLEMENTARY POWER DARLINGTON

COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055

POWER TRANSISTORS(8A,100W)

2N6053,2N6054 -> PNP 2N6055,2N6056 -> NPN DARLINGTOPN 8 AMPERE COMPLEMEMTARY SILICON TRANSISTORS 60 - 80 Volts 100 Watts

Power Transistors

Power Transistors

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • DARLINGTON • Complement to type 2N6055;2N6056 APPLICATIONS • General-purpose power amplifier and low frequency swithing applications

COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • DARLINGTON • Complement to type 2N6055;2N6056 APPLICATIONS • General-purpose power amplifier and low frequency swithing applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • DARLINGTON • Complement to type 2N6055;2N6056 APPLICATIONS • General-purpose power amplifier and low frequency swithing applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • DARLINGTON • Complement to type 2N6055;2N6056 APPLICATIONS • General-purpose power amplifier and low frequency swithing applications

COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS

Power Transistors

Power Transistors

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6053, 6055 Series types are Complementary Silicon Darlington Power Transistors designed for amplifier and switching applications.

POWER TRANSISTORS(8A,100W)

2N6053,2N6054 -> PNP 2N6055,2N6056 -> NPN DARLINGTOPN 8 AMPERE COMPLEMEMTARY SILICON TRANSISTORS 60 - 80 Volts 100 Watts

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6053, 6055 Series types are Complementary Silicon Darlington Power Transistors designed for amplifier and switching applications.

Power Transistors

Power Transistors

COMPLEMENTARY POWER DARLINGTON

COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055

POWER TRANSISTORS(8A,100W)

2N6053,2N6054 -> PNP 2N6055,2N6056 -> NPN DARLINGTOPN 8 AMPERE COMPLEMEMTARY SILICON TRANSISTORS 60 - 80 Volts 100 Watts

COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications

COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS

POWER TRANSISTORS(8A,100W)

2N6053,2N6054 -> PNP 2N6055,2N6056 -> NPN DARLINGTOPN 8 AMPERE COMPLEMEMTARY SILICON TRANSISTORS 60 - 80 Volts 100 Watts

Power Transistors

Power Transistors

NPN Darlington Silicon Power Transistor

DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS . . . designed for general–purpose amplifier and low frequency switching applications. •High DC Current Gain — hFE= 3000 (Typ) @ IC= 4.0 Adc •Collector–Emitter Sustaining Voltage — @ 100 mA VCEO(sus)=