位置：首页 > IC中文资料第541页 > 2N605
2N605晶体管资料
2N605别名：2N605三极管、2N605晶体管、2N605晶体三极管
2N605生产厂家：美国半导体技术公司
2N605制作材料：Ge-PNP
2N605性质：射频/高频放大 （HF）
2N605封装形式：直插封装
2N605极限工作电压：15V
2N605最大电流允许值：0.12A
2N605最大工作频率：15MHZ
2N605引脚数：3
2N605最大耗散功率：0.12W
2N605放大倍数：
2N605图片代号：D-9
2N605vtest：15
2N605htest：15000000
- 2N605atest：0.12
2N605wtest：0.12
2N605代换 2N605用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG95A,
2N605价格
参考价格：￥7.4460
型号：2N6051 品牌：MULTICOMP 备注：这里有2N605多少钱，2025年最近7天走势，今日出价，今日竞价，2N605批发/采购报价，2N605行情走势销售排行榜，2N605报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | MOSPEC 统懋 |   | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS | boca 博卡 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar | COMSET | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. | Central | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon PNP Darlingtion Power Transistor DESCRIPTION • Built-in Base-Emitter Shunt Resistors • High DC current gainhFE = 750 (Min) @ IC = -6A • Collector-Emitter Sustaining VoltageVCEO(SUS)= -80V(Min) • Complement to type 2N6058 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications. | ISC 无锡固电 | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS | boca 博卡 | | ||
POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar | COMSET | | ||
COLLECTOR-EMITTER VOLTAGE DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. | Central | | ||
Bipolar PNP Device in a Hermetically sealed TO3 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 12A | SEME-LAB | | ||
PNP DARLINGTON POWER SILICON TRANSISTOR PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 | Micrel 麦瑞半导体 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PNP DARLINGTON POWER SILICON TRANSISTOR PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 | Microsemi 美高森美 | | ||
POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | MOSPEC 统懋 | | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PNP DARLINGTON POWER SILICON TRANSISTOR PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 | Micrel 麦瑞半导体 | | ||
PNP DARLINGTON POWER SILICON TRANSISTOR PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 | Microsemi 美高森美 | | ||
SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. | Central | | ||
Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W Description : A silicon PNP Darlington transistors in a TO-3 type case designed for general-purpose amplifier and low-frequency applications Features - High DC Current Gain - Collector-Emitter Sustaining Voltage : Vced(sus) = 100V Min @ 100mA -Monolithic Construction with Buit-in Base-Emitte | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar | COMSET | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS | boca 博卡 | | ||
Darlington Complementary Silicon Power Transistors Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • M | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6053, 6055 Series types are Complementary Silicon Darlington Power Transistors designed for amplifier and switching applications. | Central | | ||
COMPLEMENTARY POWER DARLINGTON COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 | COMSET | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • DARLINGTON • Complement to type 2N6055;2N6056 APPLICATIONS • General-purpose power amplifier and low frequency swithing applications | SAVANTIC | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
COMPLEMENTARY POWER DARLINGTON COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 | COMSET | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • DARLINGTON • Complement to type 2N6055;2N6056 APPLICATIONS • General-purpose power amplifier and low frequency swithing applications | ISC 无锡固电 | | ||
POWER TRANSISTORS(8A,100W) 2N6053,2N6054 -> PNP 2N6055,2N6056 -> NPN DARLINGTOPN 8 AMPERE COMPLEMEMTARY SILICON TRANSISTORS 60 - 80 Volts 100 Watts | MOSPEC 统懋 | | ||
POWER TRANSISTORS(8A,100W) 2N6053,2N6054 -> PNP 2N6055,2N6056 -> NPN DARLINGTOPN 8 AMPERE COMPLEMEMTARY SILICON TRANSISTORS 60 - 80 Volts 100 Watts | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • DARLINGTON • Complement to type 2N6055;2N6056 APPLICATIONS • General-purpose power amplifier and low frequency swithing applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • DARLINGTON • Complement to type 2N6055;2N6056 APPLICATIONS • General-purpose power amplifier and low frequency swithing applications | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6053, 6055 Series types are Complementary Silicon Darlington Power Transistors designed for amplifier and switching applications. | Central | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6053, 6055 Series types are Complementary Silicon Darlington Power Transistors designed for amplifier and switching applications. | Central | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY POWER DARLINGTON COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 | COMSET | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications | ISC 无锡固电 | | ||
POWER TRANSISTORS(8A,100W) 2N6053,2N6054 -> PNP 2N6055,2N6056 -> NPN DARLINGTOPN 8 AMPERE COMPLEMEMTARY SILICON TRANSISTORS 60 - 80 Volts 100 Watts | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER TRANSISTORS(8A,100W) 2N6053,2N6054 -> PNP 2N6055,2N6056 -> NPN DARLINGTOPN 8 AMPERE COMPLEMEMTARY SILICON TRANSISTORS 60 - 80 Volts 100 Watts | MOSPEC 统懋 | | ||
NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS . . . designed for general–purpose amplifier and low frequency switching applications. •High DC Current Gain — hFE= 3000 (Typ) @ IC= 4.0 Adc •Collector–Emitter Sustaining Voltage — @ 100 mA VCEO(sus)= | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. | Central | | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
2N605产品属性
- 类型
描述
- 型号
2N605
- 功能描述
达林顿晶体管 PNP Pwr Darlington
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
2450+ |
TO-3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON/安森美 |
23+ |
TO-3 |
5880 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
TO-3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
||||
2N6057 |
25+ |
7 |
7 |
||||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
mot |
25+ |
500000 |
行业低价,代理渠道 |
||||
MOTOROLA |
24+ |
TO-3 |
1000 |
原装现货假一罚十 |
|||
ST |
TO-3 |
6688 |
15 |
现货库存 |
|||
ON |
23+ |
二极管 |
12000 |
全新原装假一赔十 |
2N605芯片相关品牌
2N605规格书下载地址
2N605参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N6070B
- 2N6070A
- 2N6070
- 2N6069B
- 2N6069A
- 2N6069
- 2N6068B
- 2N6068A
- 2N6068
- 2N6067
- 2N6066
- 2N6065
- 2N6064
- 2N6063
- 2N6062
- 2N6061
- 2N6060
- 2N606
- 2N6059
- 2N6058
- 2N6057
- 2N6056
- 2N6055
- 2N6054
- 2N6053
- 2N6052G
- 2N6052
- 2N6051
- 2N6050
- 2N6049E
- 2N6049
- 2N6048
- 2N6047
- 2N6046
- 2N6045G
- 2N6045
- 2N6044
- 2N6043G
- 2N6043
- 2N6042G
- 2N6042
- 2N6041
- 2N6040G
- 2N6040
- 2N604(A)
- 2N6039G
- 2N6039
- 2N6038G
- 2N6038
- 2N6037
- 2N6036G
- 2N6036
- 2N6035G
- 2N6035
- 2N6034
- 2N6033
- 2N6032
- 2N6031
2N605数据表相关新闻
2N6027RLRAG坚持只做原装货
2N6027RLRAG坚持只做原装货
2024-9-192N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N6043G
原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
